| 1. |
- Atxabal, Ainhoa, et al.
(författare)
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Energy Level Alignment at Metal/Solution-Processed Organic Semiconductor Interfaces
- 2017
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Ingår i: Advanced Materials. - : WILEY-V C H VERLAG GMBH. - 0935-9648 .- 1521-4095. ; 29:19
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Tidskriftsartikel (refereegranskat)abstract
- Energy barriers between the metal Fermi energy and the molecular levels of organic semiconductor devoted to charge transport play a fundamental role in the performance of organic electronic devices. Typically, techniques such as electron photoemission spectroscopy, Kelvin probe measurements, and in-device hot-electron spectroscopy have been applied to study these interfacial energy barriers. However, so far there has not been any direct method available for the determination of energy barriers at metal interfaces with n-type polymeric semiconductors. This study measures and compares metal/solution-processed electron-transporting polymer interface energy barriers by in-device hot-electron spectroscopy and ultraviolet photoemission spectroscopy. It not only demonstrates in-device hot-electron spectroscopy as a direct and reliable technique for these studies but also brings it closer to technological applications by working ex situ under ambient conditions. Moreover, this study determines that the contamination layer coming from air exposure does not play any significant role on the energy barrier alignment for charge transport. The theoretical model developed for this work confirms all the experimental observations.
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| 2. |
- Braun, Slawomir, et al.
(författare)
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Energy-Level Alignment at Organic/Metal and Organic/Organic Interfaces
- 2009
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Ingår i: ADVANCED MATERIALS. - : Wiley. - 0935-9648 .- 1521-4095. ; 21:14-15, s. 1450-1472
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Forskningsöversikt (refereegranskat)abstract
- In this Review, we summarize recent work on modeling of organic/metal and organic/organic interfaces. Some of the models discussed have a semiempirical approach, that is, experimentally derived values are used in combination with theory, and others rely completely of calculations. The models are categorized according to the types of interfaces they apply to, and the strength of the interaction at the interface has been used as the main factor. We explain the basics of the models, their use, and give examples on how the models correlate with experimental results. We stress that given the complexity of organic/metal and organic/organic interface formation, it is crucial to know the exact way in which the interface was formed before choosing the model that is applicable, as none of the models presented covers the whole range of interface interaction strengths (weak physisorption to strong chemisorption).
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| 3. |
- Fabiano, Simone, et al.
(författare)
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Poly(ethylene imine) impurities induce n-doping reaction in organic (semi)conductors
- 2014
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Ingår i: Advanced Materials. - : Wiley-VCH Verlagsgesellschaft. - 0935-9648 .- 1521-4095. ; 26:34, s. 6000-6006
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Tidskriftsartikel (refereegranskat)abstract
- Volatile impurities contained in polyethyleneimine (PEI), and identified as ethyleneimine dimers and trimers, are reported. These N-based molecules show a strong reducing character, as demonstrated by the change in electrical conductivity of organic (semi) conductors exposed to the PEI vapor. The results prove that electron transfer rather than a dipole effect at the electrode interface is the origin of the work-function modification by the PEI-based layers.
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