| 1. |
- Adnane, Bouchaib, et al.
(författare)
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Origin of photoresponse at 8-14 μm in stacks of self-assembled SiGe/Si quantum dots
- 2009
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Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X.
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Tidskriftsartikel (övrigt vetenskapligt/konstnärligt)abstract
- A normal incidence photodetector operating at 8-14 μm is demonstrated using p-type δ-doped SiGe dot multilayer structures grown by molecular beam epitaxy on Si(001) substrates. Based on the experimental results of photoluminescence and photoluminescence excitation spectroscopies together with numerical analysis, the origin of the measured photocurrent was attributed to intersubband optical transitions between the heavy hole and light hole states of the valence band of the self-assembled SiGe dots and subsequent lateral transport of photo-excited carriers in the conduction channels formed by Ge wetting layers.
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| 2. |
- Amloy, Supaluck, et al.
(författare)
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Polarization-resolved fine-structure splitting of zero-dimensional InxGa1-xN excitons
- 2011
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Ingår i: PHYSICAL REVIEW B. - : American Physical Society. - 1098-0121. ; 83:20, s. 201307-
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Tidskriftsartikel (refereegranskat)abstract
- The fine-structure splitting of quantum confined InxGa1-x Nexcitons is investigated using polarization-sensitive photoluminescence spectroscopy. The majority of the studied emission lines exhibits mutually orthogonal fine-structure components split by 100-340 mu eV, as measured from the cleaved edge of the sample. The exciton and the biexciton reveal identical magnitudes but reversed sign of the energy splitting.
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| 3. |
- Dufåker, Daniel, et al.
(författare)
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Evidence of nonadiabatic exciton-phonon interaction probed by second-order LO-phonon replicas of single quantum dots
- 2013
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Ingår i: Physical Review B. Condensed Matter and Materials Physics. - : American Physical Society. - 1098-0121 .- 1550-235X. ; 87:8
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Tidskriftsartikel (refereegranskat)abstract
- In this experimental study of single InGaAs/GaAs quantum dots (QDs) the photoluminescence intensity of the second order LO-phonon replica of the excitonic interband recombination was measured along with the intensities of the first and zeroth orders. The results show that the intensity of the second-order replica is three to four times stronger than expected from the adiabatic Huang-Rhys theory, indicating that the neglected nonadiabaticity plays an important role for the understanding of the exciton-phonon coupling in QDs.
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| 4. |
- Dufåker, Daniel, et al.
(författare)
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Phonon replicas of charged and neutral exciton complexes in single quantum dots
- 2010
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Ingår i: Physical Review B. Condensed Matter and Materials Physics. - : American Physical Society. - 1098-0121 .- 1550-235X. ; 82:20
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Tidskriftsartikel (refereegranskat)abstract
- The longitudinal-optical (LO)-phonon coupling is experimentally examined by the optical decay of various charged and neutral exciton species in single quantum dots, and the related Huang-Rhys parameters are extracted. A positive trion exhibits significantly weaker LO-phonon replicas in the photoluminescence spectrum than the neutral and negatively charged species. Model computations show that the strength of the replicas is determined by the Coulomb interactions between electrons and holes, which modify the localization of the envelope wave functions and the net charge distribution.
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| 5. |
- Dufåker, Daniel, et al.
(författare)
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Quantum dot asymmetry and the nature of excited hole states probed by the doubly positively charged exciton X2
- 2013
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Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 88:4
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Tidskriftsartikel (refereegranskat)abstract
- In this experimental and theoretical study, it was found that the emission pattern of the doubly positively charged exciton complex X2+ strongly depends on the nature of the involved excited hole states as well as the quantum dot symmetry. The two-hole system in the final state of the X2+ recombination for the investigated high-symmetry pyramidal InGaAs quantum dots does not exhibit the singlet-tripletlike arrangement previously observed for the two-electron counterpart. Instead, the final states exhibit two true doublets, in accordance with group-theoretical predictions. Asymmetry is manifested in the photoluminescence spectra of X2+ by a significant splitting of one doublet, which is a spectral feature exhibited to some degree by all of the measured quantum dots. The analysis demonstrates that an external magnetic field elevates the symmetry of the quantum dots. This work highlights the exciton complex X2+ as a very sensitive probe of the quantum dot shape as well as the nature of the involved quantum states. Thus, its spectral features are very suitable for an efficient uninvasive postgrowth symmetry characterization of quantum dots.
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| 6. |
- Höglund, Linda, 1974-, et al.
(författare)
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Energy level scheme of InAs/InxGa1-xAs/GaAs quantum-dots-in-a-well infrared photodetector structures
- 2010
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Ingår i: Physical Review B. Condensed Matter and Materials Physics. - Woodbury, NY : American Physical Society. - 1098-0121 .- 1550-235X. ; 82:3, s. 035314-
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Tidskriftsartikel (refereegranskat)abstract
- A thorough investigation of quantum-dots-in-a-well structures for infrared photodetector applications has been performed employing different experimental techniques. The electronic structure of self-assembled InAs quantum dots embedded in an In0.15Ga0.85As/GaAs quantum well (QW) was deduced from photoluminescence (PL) and PL excitation (PLE) spectroscopy. From polarization-dependent PL it was revealed that the quantum dots hold two electron energy levels and two heavy-hole levels. Tunnel capacitance spectroscopy confirmed an electron energy level separation of about 50 meV, and additionally, that the conduction-band ground state and excited state of the dots are twofold and fourfold degenerates, respectively. Intersubband photocurrent spectroscopy, combined with simultaneous interband pumping of the dots, revealed a dominant transition at 150 meV (8.5 mu m) between the ground state of the quantum dots and the excited state of the QW. Results from detailed full three-dimensional calculations of the electronic structure, including effects of composition intermixing and interdot interactions, confirm the experimentally unravelled energy level scheme of the dots and well.
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| 7. |
- Karlsson, Fredrik, et al.
(författare)
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Fine structure of exciton complexes in high-symmetry quantum dots: Effects of symmetry breaking and symmetry elevation
- 2010
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Ingår i: PHYSICAL REVIEW B. - : American Physical Society. - 1098-0121. ; 81:16, s. 161307-
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Tidskriftsartikel (refereegranskat)abstract
- Quantum dots (QDs) of high symmetry (e.g., C-3 nu) have degenerate bright exciton states, unlike QDs of C-2 nu symmetry, making them intrinsically suitable for the generation of entangled photon pairs. Deviations from C-3 nu symmetry are detected in real QDs by polarization-resolved photoluminescence spectroscopy in side-view geometry of InGaAs/AlGaAs dots formed in tetrahedral pyramids. The theoretical analysis reveals both an additional symmetry plane and weak symmetry breaking, as well as the interplay with electron-hole and hole-hole exchange interactions manifested by the excitonic fine structure.
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| 8. |
- Larsson, Mats, et al.
(författare)
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Growth-temperature-dependent band alignment in Si/Ge quantum dots from photoluminescence spectroscopy
- 2006
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Ingår i: Physical Review B. - 1098-0121 .- 1550-235X. ; 73:19, s. 195319-1--195319-7
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Tidskriftsartikel (refereegranskat)abstract
- The present work is a photoluminescence study of Si-embedded Stranski-Krastanov Ge quantum dots. The value of the conduction band offset is a result of the magnitude of the tensile strain in the Si surrounding the compressive strained Ge dot. Due to the increased Si/Ge intermixing and reduced strain in the Si barrier, a reduction of the conduction band offset is observed at increased growth temperatures. The optical properties as derived from photoluminescence spectroscopy are correlated with structural properties obtained as a function of the growth temperature. High growth temperatures result in large Ge dots with low density due to the pronounced surface diffusion and Si/Ge intermixing. As confirmed by photoluminescence, the band gap of the Ge dots increases with increased growth temperature due to the higher degree of Si/Ge intermixing. The band alignment is of type II in these structures, but the occurrence of both spatially indirect and spatially direct transitions are confirmed in temperature-dependent photoluminescence measurements with varied excitation power conditions. An increasing temperature results in a gradual transition from the spatially indirect to the spatially direct recombination in the type-II band lineup, due to higher oscillator strength for the spatially direct transition combined with a higher population factor at higher temperatures.
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| 9. |
- Larsson, Mats, et al.
(författare)
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Magnetic field effects on optical and transport properties in InAs/GaAs quantum dots
- 2006
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Ingår i: Physical Review B. - 1098-0121. ; 74:24
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Tidskriftsartikel (refereegranskat)abstract
- A photoluminescence study of self-assembled InAs/GaAs quantum dots under the influence of magnetic fields perpendicular and parallel to the dot layer is presented. At low temperatures, the magnetic field perpendicular to the dot layer alters the in-plane transport properties due to localization of carriers in wetting layer (WL) potential fluctuations. Decreased transport in the WL results in a reduced capture into the quantum dots and consequently a weakened dot-related emission. The effect of the magnetic field exhibits a considerable dot density dependence, which confirms the correlation to the in-plane transport properties. An interesting effect is observed at temperatures above approximately 100 K, for which magnetic fields, both perpendicular and parallel to the dot layer, induced an increment of the quantum dot photoluminescence. This effect is ascribed to the magnetic confinement of the exciton wave function, which increases the probability for carrier capture and localization in the dot, but affects also the radiative recombination with a reduced radiative lifetime in the dots under magnetic compression.
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| 10. |
- Larsson, Mats, et al.
(författare)
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Reversed quantum-confined Stark effect and an asymmetric band alignment observed for type-II Si∕Ge quantum dots
- 2005
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Ingår i: Physical Review B. - 1098-0121. ; 71:11, s. 113301-
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Tidskriftsartikel (refereegranskat)abstract
- We report on the quantum-confined Stark effect for spatially indirect transitions in Stranski-Krastanov grown type-II Si∕Ge quantum dots. A linear blueshift of the spatially indirect transition is observed at increasing electric field in contrast to the commonly observed redshift for type-I transitions. A shift of the emission-peak position and different quenching rates of the photoluminescence for p-i-n and n-i-p diodes at increased electric field and temperature indicate a deeper notch potential for electrons above the dot than below due to a strain-induced asymmetry in the band alignment.
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