| 1. |
- Allsopp, Benjamin, et al.
(författare)
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Towards improved cover glasses for photovoltaic devices
- 2020
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Ingår i: Progress in Photovoltaics. - : John Wiley and Sons Ltd. - 1062-7995 .- 1099-159X. ; 28, s. 1187-1206
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Tidskriftsartikel (refereegranskat)abstract
- For the solar energy industry to increase its competitiveness, there is a global drive to lower the cost of solar-generated electricity. Photovoltaic (PV) module assembly is material-demanding, and the cover glass constitutes a significant proportion of the cost. Currently, 3-mm-thick glass is the predominant cover material for PV modules, accounting for 10%–25% of the total cost. Here, we review the state-of-the-art of cover glasses for PV modules and present our recent results for improvement of the glass. These improvements were demonstrated in terms of mechanical, chemical and optical properties by optimizing the glass composition, including addition of novel dopants, to produce cover glasses that can provide (i) enhanced UV protection of polymeric PV module components, potentially increasing module service lifetimes; (ii) re-emission of a proportion of the absorbed UV photon energy as visible photons capable of being absorbed by the solar cells, thereby increasing PV module efficiencies and (iii) successful laboratory-scale demonstration of proof of concept, with increases of 1%–6% in Isc and 1%–8% in Ipm. Improvements in both chemical and crack resistance of the cover glass were also achieved through modest chemical reformulation, highlighting what may be achievable within existing manufacturing technology constraints. © 2020 The Authors.
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| 2. |
- Anacleto, Pedro, et al.
(författare)
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Precisely nanostructured HfO2 rear passivation layers for ultra-thin Cu(In,Ga)Se-2
- 2022
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Ingår i: Progress in Photovoltaics. - : John Wiley & Sons. - 1062-7995 .- 1099-159X. ; 30:11, s. 1289-1297
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Tidskriftsartikel (refereegranskat)abstract
- The quest for material-efficient Cu(In,Ga)Se-2 (CIGS) solar cells encourages the development of ultra-thin absorbers. Their use reduces material consumption and energy usage during production by increasing the throughput. Thereby, both the bill of materials as well as the energy and capital costs are reduced. However, because thin absorbers are prone to increase back contact recombination, back surface passivation schemes are necessary to reach a similar or higher conversion efficiency than for absorbers with conventional thickness. Here, we investigate nanostructured hafnium oxide (HfO2) rear passivation layers for ultra-thin CIGS solar cells. We fabricate regular arrays of point contacts with 200 nm diameter through HfO2 layers with thicknesses between 7 and 40 nm using electron beam lithography and reactive ion etching. The current-voltage curves of solar cells with a 500 nm thick CIGS absorber layer and the nanostructured passivation layer show improved performance concerning V-oc and J(sc) compared to non-passivated reference devices. Furthermore, external quantum efficiency and optical reflection confirm an effective passivation behavior, with an average efficiency increase of up to 1.2% for the cells with the 40 nm thick HfO2 layer. In addition, simulation work shows that even 40 nm thick HfO2 passivation layers have only a minimal effect on the optical properties of ultra-thin CIGS solar cells, and hence, the photocurrent increase verified experimentally stems from electrical improvements caused by the HfO2 layer passivation effect. We also investigate the impact of ultra-thin (0.3, 0.6, 1.3, and 2.5 nm) non-patterned HfO2 passivation layers on the same type of solar cells. However, these results showed no improvement in solar cell performance, despite an increase in the current density with layer thickness.
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| 3. |
- Bergqvist, Jonas, et al.
(författare)
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New method for lateral mapping of bimolecular recombination in thin-film organic solar cells
- 2016
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Ingår i: Progress in Photovoltaics. - : John Wiley & Sons. - 1062-7995 .- 1099-159X. ; 24:8, s. 1096-1108
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Tidskriftsartikel (refereegranskat)abstract
- The best organic solar cells are limited by bimolecular recombination. Tools to study these losses are available; however, they are only developed for small area (laboratory-scale) devices and are not yet available for large area (production-scale) devices. Here we introduce the Intermodulation Light Beam-Induced Current (IMLBIC) technique, which allows simultaneous spatial mapping of both the amount of extracted photocurrent and the bimolecular recombination over the active area of a solar cell. We utilize the second-order non-linear dependence on the illumination intensity as a signature for bimolecular recombination. Using two lasers modulated with different frequencies, we record the photocurrent response at each modulation frequency and the bimolecular recombination in the second-order intermodulation response at the sum and difference of the two frequencies. Drift-diffusion simulations predict a unique response for different recombination mechanisms. We successfully verify our approach by studying solar cells known to have mainly bimolecular recombination and thus propose this method as a viable tool for lateral detection and characterization of the dominant recombination mechanisms in organic solar cells. We expect that IMLBIC will be an important future tool for characterization and detection of recombination losses in large area organic solar cells.
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| 4. |
- Broman, Lars
(författare)
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Thermophotovoltaics bibliography
- 1995
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Ingår i: Progress in Photovoltaics. - 1062-7995 .- 1099-159X. ; 3:1, s. 65-74
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Tidskriftsartikel (refereegranskat)abstract
- A bibliography containing 200 entries on thermophotovoltaic conversion of energy between 1960 and 1995 has been compiled. The entries are categorized with respect to type and contents.
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| 5. |
- Donzel-Gargand, Olivier, et al.
(författare)
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Deep surface Cu depletion induced by K in high-efficiency Cu(In,Ga)Se2 solar cell absorbers
- 2018
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Ingår i: Progress in Photovoltaics. - : Wiley. - 1062-7995 .- 1099-159X. ; 26:9, s. 730-739
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Tidskriftsartikel (refereegranskat)abstract
- In this work, we used K‐rich glass substrates to provide potassium during the coevaporation of Cu(In,Ga)Se2 (CIGS) absorber layers. Subsequently, we applied a postdeposition treatment (PDT) using KF or RbF to some of the grown absorbers. It was found that the presence of K during the growth of the CIGS layer led to cell effi- ciencies beyond 17%, and the addition of a PDT pushed it beyond 18%. The major finding of this work is the observation of discontinuous 100‐ to 200‐nm‐deep Cu‐ depleted patches in the vicinity of the CdS buffer layer, correlated with the presence of K during the growth of the absorber layer. The PDT had no influence on the forma- tion of these patches. A second finding concerns the composition of the Cu‐depleted areas, where an anticorrelation between Cu and both In and K was measured using scanning transmission electron microscopy. Furthermore, a steeper Ga/(In+Ga) ratio gradient was measured for the absorbers grown with the presence of K, suggesting that K hinders the group III element interdiffusion. Finally, no Cd in‐diffusion to the CIGS layer could be detected. This indicates that if CdCu substitution occurs, either their concentration is below our instrumental detection limit or its presence is contained within the first 6 nm from the CdS/CIGS interface.
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| 6. |
- Donzel-Gargand, Olivier, et al.
(författare)
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Secondary phase formation and surface modification from a high dose KF-post deposition treatment of (Ag,Cu)(In,Ga)Se-2 solar cell absorbers
- 2019
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Ingår i: Progress in Photovoltaics. - : Wiley. - 1062-7995 .- 1099-159X. ; 27:3, s. 220-228
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Tidskriftsartikel (refereegranskat)abstract
- In this study, we assessed the potential of KF-post deposition treatment (PDT) performed on a silver-alloyed Cu (In,Ga)Se-2 (ACIGS) solar absorber. ACIGS absorbers with Ag/Ag + Cu ratio (Ag/I) close to 20% were co-evaporated on a Mo-coated glass substrate and exposed to in-situ KF-PDT of various intensities. The current-voltage characteristics indicated that an optimized PDT can be beneficial, increasing in our study the median V-oc and efficiency values by +48 mV and + 0.9%(abs) (from 728 mV and 16.1% efficiency measured for the sample without PDT), respectively. However, an increased KF-flux during PDT resulted in a net deterioration of the performance leading to median V-oc and efficiency values as low as 503 mV and 4.7%. The chemical composition analysis showed that while the reference absorber without any post deposition treatment (PDT) was homogeneous, the KF-PDT induced a clear change within the first 10 nm from the surface. Here, the surface layer composition was richer in K and In with an increased Ag/I ratio, and its thickness seemed to follow the KF exposure intensity. Additionally, high-dose KF-PDT resulted in substantial formation of secondary phases for the ACIGS. The secondary phase precipitates were also richer in Ag, K, and In, and electron and X-ray diffraction data match with the monoclinic C 1 2/c 1 space group adopted by the Ag-alloyed KInSe2 phase. It could not be concluded whether the performance loss for the solar cell devices originated from the thicker surface layer or the presence of secondary phases, or both for the high-dose KF-PDT sample.
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| 7. |
- Donzel-Gargand, Olivier, et al.
(författare)
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Surface Modification And Secondary Phase Formation From a High Dose KF-Post Deposition Treatment of (Ag,Cu)(In,Ga)Se2 Solar Cell Absorbers
-
Ingår i: Progress in Photovoltaics. - 1062-7995 .- 1099-159X.
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Tidskriftsartikel (refereegranskat)abstract
- In this study we assessed the potential of KF-Post Deposition Treatment (PDT) performed on a silver-alloyed Cu(Inx,Ga1-x)Se2 (ACIGS) solar absorber. ACIGS absorbers with Ag/Ag+Cu ratio (Ag/I) close to 20% were co-evaporated on a Mo-coated glass substrate and exposed to in-situ KF-PDT of various intensities. The current-voltage characteristics indicated that an optimized PDT can be beneficial, increasing in our study the median Voc and efficiency values by +48 mV and +0.9 %abs (from 728 mV and 16.1 % efficiency measured for the sample without PDT), respectively. However, an increased KF-flux during PDT resulted in a net deterioration of the performance leading to median Voc and efficiency values as low as 503 mV and 4.7 %. The chemical composition analysis showed that while the reference absorber without any PDT was homogeneous, the KF-PDT induced a clear change within the first 10 nm from the surface. Here, the surface layer composition was richer in K and In with an increased Ag/I ratio, and its thickness seemed to follow the KF exposure intensity. Additionally, high-dose KF-PDT resulted in substantial formation of secondary phases for the ACIGS. The secondary phase precipitates were also richer in Ag, K and In, and Electron and X-ray diffraction data match with the monoclinic C 1 2/c 1 space group adopted by the Ag-alloyed KInSe2 (AKIS) phase. It could not be concluded whether the performance loss for the solar cell devices originated from the thicker surface layer or the presence of secondary phases, or both for the high-dose KF-PDT sample.
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| 8. |
- Giraldo, Sergio, et al.
(författare)
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Cu2ZnSnSe4 solar cells with 10.6% efficiency through innovative absorber engineering with Ge superficial nanolayer
- 2016
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Ingår i: Progress in Photovoltaics. - : Wiley. - 1062-7995 .- 1099-159X. ; 24:10, s. 1359-1367
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Tidskriftsartikel (refereegranskat)abstract
- In our recently published work, the positive effect of a Ge nanolayer introduced into the processing of Cu2ZnSnSe4 absorbers (CZTSe) was demonstrated. In this contribution, the complete optimization of this new approach is presented for the first time. Hence, the optimum Ge nanolayer thickness range is defined in order to achieve an improved performance of the devices, obtaining a record efficiency of 10.6%. By employing this optimized approach, the open-circuit voltage (V-OC) is boosted for our pure selenide CZTSe up to 489 mV, leading to V-OC deficit among the lowest reported so far in kesterite technology. Additionally, two important effects related to the Ge are unambiguously demonstrated that might be the origin of the V-OC boost: the improvement of the grain size and the corresponding crystalline quality, and the interaction between Ge and Na that allows for dynamic control over the CZTSe doping. Finally, evidences pointing to the origin of the deterioration of devices properties for large Ge concentrations are presented.
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| 9. |
- Gouillart, Louis, et al.
(författare)
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Interface engineering of ultrathin Cu(In,Ga)Se2 solar cells on reflective back contacts
- 2021
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Ingår i: Progress in Photovoltaics. - : John Wiley & Sons. - 1062-7995 .- 1099-159X. ; 29:2, s. 212-221
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Tidskriftsartikel (refereegranskat)abstract
- Cu(In,Ga)Se-2-based (CIGS) solar cells with ultrathin (<= 500 nm) absorber layers suffer from the low reflectivity of conventional Mo back contacts. Here, we design and investigate ohmic and reflective back contacts (RBC) made of multilayer stacks that are compatible with the direct deposition of CIGS at 500 degrees C and above. Diffusion mechanisms and reactions at each interface and in the CIGS layer are carefully analyzed by energy dispersive X-ray (EDX)/scanning transmission electron microscopy (STEM). It shows that the highly reflective silver mirror is efficiently encapsulated in ZnO:Al layers. The detrimental reaction between CIGS and the top In2O3:Sn (ITO) layer used for ohmic contact can be mitigated by adding a 3 nm thick Al2O3 layer and by decreasing the CIGS coevaporation temperature from 550 degrees C to 500 degrees C. It also improves the compositional grading of Ga toward the CIGS back interface, leading to increased open- circuit voltage and fill factor. The best ultrathin CIGS solar cell on RBC exhibits an efficiency of 13.5% (+1.0% as compared to our Mo reference) with a short-circuit current density of 28.9 mA/cm(2) (+2.6 mA/cm(2)) enabled by double-pass absorption in the 510 nm thick CIGS absorber. RBC are easy to fabricate and could benefit other photovoltaic devices that require highly reflective and conductive contacts subject to high temperature processes.
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| 10. |
- Hall, M, et al.
(författare)
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Reflector materials for two-dimensional low-concentrating photovoltaic systems: the effect of specular versus diffuse reflectance efficiency on the module
- 2005
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Ingår i: Progress in Photovoltaics. - : Wiley. - 1099-159X. ; 13:3, s. 217-233
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Tidskriftsartikel (refereegranskat)abstract
- Photovoltaic modules in two-dimensional low-concentrating systems with specular parabolic reflectors often experience high local irradiance that causes high local currents and cell temperatures. This generally results in power losses. The use of low-angle scattering reflectors gives a smoother irradiance distribution, which results in a higher fill factor. In order to study how the choice of reflector material influences system performance, two different reflector materials (anodised aluminium and lacquered rolled aluminium laminated on a plastic substrate) were compared. The total and diffuse reflectance spectra of the reflector materials were measured, the integrated hemispherical and specular solar reflectance values calculated, and the angular distributions of scattered light investigated. Two geometrically identical 3 x concentrating photovoltaic systems with semi-parabolic over edge reflectors of the different materials were tested outdoors. While the anodised aluminium reflector, which had higher hemispherical and specular solar reflectance, resulted in a higher short-circuit current, the low-angle scattering lacquered foil gave a higher fill factor, due to a smoother image of the sun on the module surface, and an equally high calculated annual electricity production. Given its low price, the latter reflector should thus be more cost-effective in low-concentrating photovoltaic systems.
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