| 1. |
- Haralson, Erik, et al.
(författare)
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The effect of C on emitter-base design for a single-polysilicon SiGe : C HBT with an IDP emitter
- 2004
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Ingår i: Applied Surface Science. - : Elsevier BV. - 0169-4332 .- 1873-5584. ; 224:1-4, s. 330-335
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Tidskriftsartikel (refereegranskat)abstract
- A differential epitaxy SiGe:C heterojunction bipolar junction transistor (HBT) design is reported and used to study the effect of carbon on junction formation as well as the effect of lateral design parameters on ac and dc performance. The device exhibits a high current gain (beta) of 1700 and a BVCEO of 1.8 V. The peak cutoff frequency (f(T)) and maximum oscillation frequency (f(MAX)) are 73 and 17 GHz, respectively. The effect of emitter overlap on f(T) was minimal, but it had a strong impact on dc performance. LOCOS opening size strongly impacted both ac and dc performance. In addition, the effect of carbon, base cap thickness, and rapid thermal anneal (RTA) temperature on the emitter-base (E-B) junction formation was studied.
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| 2. |
- Hållstedt, Julius, et al.
(författare)
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Growth of high quality epitaxial Si1-x-yGexCy layers by using chemical vapor deposition
- 2004
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Ingår i: Applied Surface Science. - : Elsevier BV. - 0169-4332 .- 1873-5584. ; 224:01-Apr, s. 46-50
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Tidskriftsartikel (refereegranskat)abstract
- The epitaxial quality of non-selective and selective deposition of Si1-x-yGexCy (0 less than or equal to x less than or equal to 0.30, 0 less than or equal to y less than or equal to 0.02) layers has been optimized by using high-resolution reciprocal lattice mapping (HRRLM). The main goal was to incorporate a high amount of substitutional carbon atoms in Si or Si1-xGex matrix without creating defects. The carbon incorporation behavior was explained by chemical and kinetic effects of the reactant gases during epitaxial process. Although high quality epitaxial Si1-yCy layers can be deposited, lower electron mobility compared to Si layers was observed. (C) 2003 Elsevier B.V. All rights reserved.
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| 3. |
- Suvar, Erdal, et al.
(författare)
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Characterization of leakage current related to a selectively grown collector in SiGeC heterojunction bipolar transistor structure
- 2004
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Ingår i: Applied Surface Science. - : Elsevier BV. - 0169-4332 .- 1873-5584. ; 224:1-4, s. 336-340
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Tidskriftsartikel (refereegranskat)abstract
- Sources of base-collector and base-emitter leakage current in a SiGeC-based heterojunction bipolar transistor (HBT) with a selectively grown and chemical-mechanical polished (CMP) collector are discussed. Transmission electron microscopy and electrical measurement have been applied to investigate the leakage current. It has been demonstrated that the edge-located defects generated by selective epitaxy process are the origin of the junction leakage.
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