| 1. |
- Armakavicius, Nerijus, et al.
(författare)
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Cavity-enhanced optical Hall effect in epitaxial graphene detected at terahertz frequencies
- 2017
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Ingår i: Applied Surface Science. - : Elsevier. - 0169-4332 .- 1873-5584. ; 421, s. 357-360
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Tidskriftsartikel (refereegranskat)abstract
- Cavity-enhanced optical Hall effect at terahertz (THz) frequencies is employed to determine the free charge carrier properties in epitaxial graphene (EG) with different number of layers grown by high-temperature sublimation on 4H-SiC(0001). We find that one monolayer (ML) EG possesses p-type conductivity with a free hole concentration in the low 1012 cmￜￜￜ2 range and a free hole mobility parameter as high as 1550 cm2/Vs. We also find that 6 ML EG shows n-type doping behavior with a much lower free electron mobility parameter of 470 cm2/Vs and an order of magnitude higher free electron density in the low 1013 cmￜￜￜ2 range. The observed differences are discussed. The cavity-enhanced THz optical Hall effect is demonstrated to be an excellent tool for contactless access to the type of free charge carriers and their properties in two-dimensional materials such as EG.
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| 2. |
- Gurban, S., et al.
(författare)
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Determination of the thickness distribution of a graphene layer grown on a 2 SiC wafer by means of Auger electron spectroscopy depth profiling
- 2014
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Ingår i: Applied Surface Science. - : Elsevier. - 0169-4332 .- 1873-5584. ; 316, s. 301-307
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Tidskriftsartikel (refereegranskat)abstract
- Auger electron spectroscopy (AES) depth profiling was applied for determination of the thickness of a macroscopic size graphene sheet grown on 2 in. 6H-SiC (0 0 0 1) by sublimation epitaxy. The measured depth profile deviated from the expected exponential form showing the presence of an additional, buffer layer. The measured depth profile was compared to the simulated one which allowed the derivation of the thicknesses of the graphene and buffer layers and the Si concentration of buffer layer. It has been shown that the graphene-like buffer layer contains about 30% unsaturated Si. The depth profiling was carried out in several points (diameter 50 mu m), which permitted the constructing of a thickness distribution characterizing the uniformity of the graphene sheet.
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| 3. |
- Jokubavicius, Valdas, et al.
(författare)
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Surface engineering of SiC via sublimation etching
- 2016
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Ingår i: Applied Surface Science. - Amsterdam : Elsevier BV. - 0169-4332 .- 1873-5584. ; 390, s. 816-822
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Tidskriftsartikel (refereegranskat)abstract
- We present a technique for etching of SiC which is based on sublimation and can be used to modify the morphology and reconstruction of silicon carbide surface for subsequent epitaxial growth of various materials, for example graphene. The sublimation etching of 6H-, 4H- and 3C-SiC was explored in vacuum (10−5 mbar) and Ar (700 mbar) ambient using two different etching arrangements which can be considered as Si-C and Si-C-Ta chemical systems exhibiting different vapor phase stoichiometry at a given temperature. The surfaces of different polytypes etched under similar conditions are compared and the etching mechanism is discussed with an emphasis on the role of tantalum as a carbon getter. To demonstrate applicability of such etching process graphene nanoribbons were grown on a 4H-SiC surface that was pre-patterned using the thermal etching technique presented in this study.
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| 4. |
- Khranovskyy, Volodymyr, et al.
(författare)
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Surface morphology effects on the light-controlled wettability of ZnO nanostructures
- 2012
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Ingår i: Applied Surface Science. - : Elsevier. - 0169-4332 .- 1873-5584. ; 258:20, s. 8146-8152
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Tidskriftsartikel (refereegranskat)abstract
- ZnO nanostructures of diverse morphology with shapes of corrals and cabbages as well as open and filled hexagons and sheaves prepared by APMOCVD technique, are investigated with water contact angle (CA) analysis. The as-grown ZnO nanostructures exhibit pure hydrophobic behavior, which is enhanced with the increase of the nanostructures surface area. The most hydrophobic structures (CA = 124 degrees) were found to be the complex nanosheaf, containing both the macro-and nanoscale features. It is concluded that the nanoscale roughness contributes significantly to the hydrophobicity increase. The character of wettability was possible to switch from hydrophobic-to-superhydrophilic state upon ultra violet irradiation. Both the rate and amplitude of the contact angle depend on the characteristic size of nanostructure. The observed effect is explained due to the semiconductor properties of zinc oxide enhanced by increased surface chemistry effect in nanostructures.
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| 5. |
- Pliatsikas, Nikolaos, et al.
(författare)
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Energetic bombardment and defect generation during magnetron-sputter-deposition of metal layers on graphene
- 2021
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Ingår i: Applied Surface Science. - : Elsevier. - 0169-4332 .- 1873-5584. ; 566
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Tidskriftsartikel (refereegranskat)abstract
- In the present work, we elucidate the interplay among energetic bombardment effects in magnetron sputtering and defect generation in two-dimensional (2D) materials. Using deposition of gold (Au) layers on single-layer graphene (SLG) as a model system, we study the effect of pressure-distance (pd) product during magnetron sputtering on the pristine SLG properties. Raman spectroscopy, complemented by X-ray photoelectron spectroscopy, shows that for pd = 8.2 Pa center dot cm, Au layer deposition causes defects in the SLG layer, which gradually diminish and eventually disappear with increasing pd to 82.5 Pa center dot cm. Stochastic and deterministic simulations of the sputtering process, the gas-phase transport, and the interaction of sputtered and plasma species with the substrate surface suggest that defects in SLG primarily emanate from ballistic damage caused by backscattered Ar atoms with energies above 100 eV. With increasing pd, and thereby gas-phase scattering, such high energy Ar species become thermalized and hence incapable of causing atomic displacements in the SLG layer. The overall results of our study suggest that control of backscattered Ar energy is a potential path toward enabling magnetron sputtering for fabrication of multifunctional metal contacts in devices founded upon 2D materials.
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| 6. |
- Roccaforte, F., et al.
(författare)
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Towards vertical Schottky diodes on bulk cubic silicon carbide (3C-SiC)
- 2022
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Ingår i: Applied Surface Science. - : ELSEVIER. - 0169-4332 .- 1873-5584. ; 606
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Tidskriftsartikel (refereegranskat)abstract
- In this paper, we demonstrate the feasibility of fabricating vertical Schottky diodes on bulk cubic silicon carbide (3C-SiC) material obtained by combining sublimation epitaxy and chemical vapor deposition, starting from 4 degrees -off axis 4H-SiC. First, the good quality of the epilayers grown with this method was demonstrated by morphological and structural analyses. Then, fabricated vertical Pt/3C-SiC Schottky diodes exhibited an ideality factor of 1.21 and a barrier height of 0.6 eV, as determined by thermionic emission model. The temperature dependent forward current analysis indicated the formation of an inhomogeneous barrier, which has been related with the presence of conductive surface defects, detected by nanoscale local current measurements. On the other hand, the reverse leakage current could be described by thermionic field emission model, including image force lowering. These findings demonstrate the viability of the proposed approach for bulk 3C-SiC growth for device fabrication. The material quality and the feasibility of fabricating vertical diodes based on 3C-SiC with a low barrier pave the way for the application of this polytype for medium-voltage power devices.
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| 7. |
- Shtepliuk, Ivan, et al.
(författare)
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Interaction of H and Li with epitaxial graphene on SiC: A comparative analysis by first principles study
- 2021
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Ingår i: Applied Surface Science. - : Elsevier. - 0169-4332 .- 1873-5584. ; 568
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Tidskriftsartikel (refereegranskat)abstract
- Ever-growing energy consumption in the world fosters the development of innovative energy technologies for sustainable energy production and storage. In this view, monolayer epitaxial graphene grown on 4H-SiC (MLEG/SiC) may be considered as a potential component of energy-related systems. The current paper deals with modelling of adsorption, diffusion and intercalation of hydrogen and lithium using MLEG/SiC model encompassing 2 x 2 graphene on root 3 x root 3R30 degrees surface reconstructed nine-bilayer 4H-SiC. The obtained results demonstrate a strong and stable chemisorption of hydrogen on top site of epitaxial graphene with limited surface mobility, while lithiation process occurs via formation of LiC6 phase. The stages of hydrogen and lithium intercalation beneath graphene are studied in detail by performing potential energy scan. Energetic preferences for MLEG/SiC with intercalated hydrogen and lithium atoms versus MLEG/SiC with top-adsorbed H and Li are revealed. Li intercalant-induced complete decoupling of the buffer layer from the SiC substrate followed by the formation of bilayer graphene with inequivalent doping per layer is proposed as an explanation of experimentally observed Raman G peak splitting in electrochemically lithiated epitaxial graphene on 4H-SiC. This work provides deep insights into the nature of atomic-scale processes at epitaxial graphene, which is essential for improving performance of energy-related devices.
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| 8. |
- Shtepliuka, I., et al.
(författare)
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Microstructure and luminescence dynamics of ZnCdO films with high Cd content deposited on different substrates by DC magnetron sputtering method
- 2013
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Ingår i: Applied Surface Science. - : Elsevier. - 0169-4332 .- 1873-5584. ; 276, s. 550-557
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Tidskriftsartikel (refereegranskat)abstract
- Investigation of Cd behavior in the ZnCdO alloys, where Cd content exceeds the solubility limit, is of importance due to possible impurity segregation and second phases' formation in this material. We have studied the Cd behavior in the Zn1-xCdxO films deposited by dc magnetron sputtering on different substrates: c-plane Al2O3, bare Si (1 0 0) and Au (45 nm)/Si (1 0 0). It is revealed that Cd content of 10 at. % in the target results in average 6-8 at. % of Cd in the films, depending on the substrate type. Structural analysis based on X-ray diffraction revealed the absence of Cd-related secondary phases. Time-resolved photoluminescence (TRPL) and high-resolution energy dispersive X-ray analysis (EDX) help to understand the recombination dynamics of spontaneous emission and to establish correlations between cadmium content and radiative lifetime. We have revealed that the internal quantum efficiency is influenced by the Cd content and defect concentration. It is suggested that increasing of the cadmium content results in the reduction of nonradiative recombination centers originating from point defects.
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| 9. |
- Yazdi, Gholamreza, et al.
(författare)
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Effect of epitaxial graphene morphology on adsorption of ambient species
- 2019
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Ingår i: Applied Surface Science. - : Elsevier BV. - 0169-4332 .- 1873-5584. ; 486, s. 239-248
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Tidskriftsartikel (refereegranskat)abstract
- This work illustrates the impact of atmospheric gases on the surface of epitaxial graphene. The different rate of adsorption on different parts of graphene samples provides a concrete evidence that the surface morphology of graphene plays a significant role in this process. The uneven adsorption occurs only on the surface of the monolayer graphene and not on bilayer graphene. The second monolayer is distinguished and verified by the phase contrast mode of atomic force microscopy and the low energy electron microscopy, respectively. Raman spectroscopy is used to study the strain on the surface of graphene; results indicate that monolayer and bilayer graphene exhibit different types of strain. The bilayer is under more compressive strain in comparison with monolayer graphene that hinders the process of adsorption. However, the wrinkles and edges of steps of the bilayer are under tensile strain, hence, facilitate adsorption. Samples were subjected to X-ray photoelectron spectroscopy which confirms that the adsorbates on the epitaxial graphene are carbon clusters with nitrogen and oxygen contamination. For reversing the adsorption process the samples are annealed and a method for the removal of these adsorbates is proposed.
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