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Träfflista för sökning "L773:2331 7019 ;pers:(Stehr Jan Eric)"

Sökning: L773:2331 7019 > Stehr Jan Eric

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1.
  • Stehr, Jan Eric, et al. (författare)
  • Efficient Auger Charge-Transfer Processes in ZnO
  • 2018
  • Ingår i: Physical Review Applied. - : AMER PHYSICAL SOC. - 2331-7019. ; 9:5
  • Tidskriftsartikel (refereegranskat)abstract
    • Photoluminescence and magneto-optical measurements are performed on a line peaking at 3.354 eV (labeled as NBX) in electron-irradiated ZnO. Even though the energy position of the NBX line is close to that for bound excitons in ZnO, it has distinctively different magneto-optical properties. Photoelectron paramagnetic resonance measurements reveal a connection and a charge-transfer process involving NBX and Fe and Al centers. The experimental results are explained within a model which assumes that the NBX is a neutral donor bound exciton at a defect center located near a Fe impurity and an Auger-type charge-transfer process occurs between NBX and Fe3+. While the NBX dissociates, its hole is captured by an excited state of Fe3+ and the released energy is transferred to the NBX electron, which is excited to the conduction band and subsequently trapped by a substitutional Al-zn shallow donor.
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2.
  • Stehr, Jan Eric, et al. (författare)
  • Zinc-Vacancy–Donor Complex : A Crucial Compensating Acceptor in ZnO
  • 2014
  • Ingår i: Physical Review Applied. - : American Physical Society. - 2331-7019. ; 2:021001
  • Tidskriftsartikel (refereegranskat)abstract
    • The aluminum–zinc-vacancy (Al Zn −V Zn ) complex is identified as one of the dominant defects in Al-containing n -type ZnO after electron irradiation at room temperature with energies above 0.8 MeV. The complex is energetically favorable over the isolated V Zn , binding more than 90% of the stable V Zn ’s generated by the irradiation. It acts as a deep acceptor with the (0/− ) energy level located at approximately 1 eV above the valence band. Such a complex is concluded to be a defect of crucial and general importance that limits the n -type doping efficiency by complex formation with donors, thereby literally removing the donors, as well as by charge compensation.
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Svensson, B. G. (2)
Chen, Weimin (2)
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