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Träfflista för sökning "L773:1873 5584 srt2:(2005-2009)"

Sökning: L773:1873 5584 > (2005-2009)

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1.
  • Agustsson, J. S., et al. (författare)
  • Growth, coalescence, and electrical resistivity of thin Pt films grown by dc magnetron sputtering on SiO2
  • 2008
  • Ingår i: Applied Surface Science. - : Elsevier BV. - 0169-4332 .- 1873-5584. ; 254:22, s. 7356-7360
  • Tidskriftsartikel (refereegranskat)abstract
    • Ultra thin platinum films were grown by dc magnetron sputtering on thermally oxidized Si (100) substrates. The electrical resistance of the films was monitored in situ during growth. The coalescence thickness was determined for various growth temperatures and found to increase from 1.1 nm for films grown at room temperature to 3.3 nm for films grown at 400 degrees C. A continuous film was formed at a thickness of 2.9 nm at room temperature and 7.5 nm at 400 degrees C. The room temperature electrical resistivity decreases with increased growth temperature, while the in-plain grain size and the surface roughness, measured with a scanning tunneling microscope (STM), increase. Furthermore, the temperature dependence of the film electrical resistance was explored at various stages during growth.
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2.
  • Amer, Eynas, et al. (författare)
  • Impact of an extended source in laser ablation using pulsed digital holographic interferometry and modelling
  • 2009
  • Ingår i: Applied Surface Science. - : Elsevier BV. - 0169-4332 .- 1873-5584. ; 255:21, s. 8917-8925
  • Tidskriftsartikel (refereegranskat)abstract
    • Pulsed digital holographic interferometry has been used to study the effect of the laser spot diameter on the shock wave generated in the ablation process of an Nd:YAG laser pulse on a Zn target under atmospheric pressure. For different laser spot diameters and time delays, the propagation of the expanding vapour and of the shock wave were recorded by intensity maps calculated using the recorded digital holograms. From the latter phase maps, the refractive index and the density field can be derived. A model was developed that approaches the density distribution, in particular the ellipsoidal expansion characteristics. The induced shock wave has an ellipsoid shape that approaches a sphere for decreasing spot diameter. The ellipsoidal shock waves have almost the same centre offset towards the laser beam and the same aspect ratio for different time steps. The model facilitates the derivation of the particle velocity field. The method provides valuable quantitative results that are discussed, in particular in comparison with the simpler point source explosion theory.
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3.
  • An, W. W., et al. (författare)
  • Synthesis and surface characteristics of CeTbO3+delta induced by femtosecond laser irradiation
  • 2007
  • Ingår i: Applied Surface Science. - : Elsevier BV. - 1873-5584 .- 0169-4332. ; 253:8, s. 3884-3887
  • Tidskriftsartikel (refereegranskat)abstract
    • This work describes the use of focused, high-intensity light from a Ti: sapphire laser that generates femtosecond pulses to irradiate mixture of CeO2 and Tb4O7 under ambient conditions. The prepared samples were investigated by means of X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and scanning electron microscope (SEM). XRD and XPS measurement results demonstrated that solid solution CeTbO3+delta with cubic fluorite structure has been synthesized on the irradiated target surface. SEM micrographs showed that the ultra-short laser irradiation resulted in the formation of foamy structure and spherical particles with size varying from about 30 to 200 nm. The formation mechanism has been discussed in detail. (c) 2006 Elsevier B.V. All rights reserved.
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4.
  • Babonas, G. J., et al. (författare)
  • Optical properties of Fe-doped silica films on Si
  • 2006
  • Ingår i: Applied Surface Science. - : Elsevier BV. - 0169-4332 .- 1873-5584. ; 252:15, s. 5391-5394
  • Tidskriftsartikel (refereegranskat)abstract
    • Optical properties of Fe-doped silica films on Si were investigated by ellipsometric technique in the region 1-5 eV. Samples were produced by sol-gel method. Precursors were prepared by mixing tetraethoxysilane (TEOS) solution in ethanol and water with aqueous solution of Fe-chloride or Fe-acetate. The coating solution was deposited on Si substrates by spin on technique. The size of Fe-containing nanometric-sized particles depended on technology and varied from 20 to 100 nm. Optical response of complex hybrid samples SiO2:Fe/Si was interpreted in a multi-layer model. In the inverse problem, the Maxwell equations were solved by transfer matrix technique. Dielectric function of Fe-doped silica layers was calculated in the model of effective media. Analysis of optical data has shown that various Fe-oxides formed. Experimental data for films obtained from precursors with Fe-acetate and annealed in hydrogen were well described by the model calculations taking into account a small contribution 1-5% of metal Fe imbedded in silica. The Fe/Fe-O contribution to optical response increased for samples grown from FeCl3-precursor. Ellipsometric data for Fe-doped silica films on Si were interpreted taking into account the structural AFM studies as well as the results of magnetic measurements.
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5.
  • Bergström, David, et al. (författare)
  • The absorptance of steels to Nd:YLF and Nd:YAG laser light at room temperature
  • 2007
  • Ingår i: Applied Surface Science. - : Elsevier BV. - 0169-4332 .- 1873-5584. ; 253:11, s. 5017-5028
  • Tidskriftsartikel (refereegranskat)abstract
    • The measurement of absorptance is important for the analysis and modelling of laser-material interactions. Unfortunately, most of the absorptance data presently available considers only polished pure metals rather than the commercially available (unpolished, oxidised) alloys, which are actually being processed in manufacturing. This paper presents the results of absorptance measurements carried out at room temperature on as-received engineering grade steels including hot and cold rolled mild steel and stainless steels of various types. The measurements were made using an integrating sphere with an Nd:YLF laser at two wavelengths (1053 and 527 nm, which means that the results are also valid for Nd:YAG radiation at 1064 and 532 nm). The absorptance results obtained differ considerably from existing data for polished, pure metals and should help improve the accuracy of laser-material interaction models. Some clear trends were identified; for all materials studied, the absorptance was considerably higher than the previously published values for the relevant pure metals with polished surfaces. For all 15 samples the absorptance was higher for the green than for the infrared wavelength. No clear trend correlating the absorptance with the roughness was found for mild steel in the roughness range Sa 0.4-5.6 μm. A correlation between absorptance and roughness was noted for stainless steel for Sa values above 1.5 μm.
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6.
  • Berner, Simon, et al. (författare)
  • Electronic and structural studies of immobilized thiol-derivatized cobalt porphyrins on gold surfaces
  • 2007
  • Ingår i: Applied Surface Science. - : Elsevier BV. - 0169-4332 .- 1873-5584. ; 253:18, s. 7540-7548
  • Tidskriftsartikel (refereegranskat)abstract
    • The immobilisation of thiol-derivatized cobalt porphyrins on gold surfaces has been studied in detail by means of combined scanning tunnelling microscopy (STM) and X-ray photoelectron spectroscopy (XPS). S-thioacetyl has been used as a protective group for the thiol. Different routes for deprotection of the acetyl groups were performed in acidic and in basic conditions. The results show the formation of monolayer films for the different preparation schemes. The immobilisation of the molecules on the gold surface takes place through the thiol-linkers by the formation of multiple thiolate bonds. In the case of layers formed with protected porphyrins approximately 60% of the linkers are bonded to the gold surface whereas for deprotected layers the amount of bonded linkers is increased up to about 80%. STM measurements revealed that the molecules arrange in a disordered overlayer and do not exhibit mobility on the gold surface. Annealing experiments have been performed in order to test the stability of the porphyrin layers. Disordered patterns have been observed in the STM images after annealing at T = 400 °C. XPS revealed that the sulphur content disappeared completely after annealing at T = 180 °C and that the molecules did undergo significant modifications.
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7.
  • Bexell, Ulf, et al. (författare)
  • ToF-SIMS depth profiling of (Ga,Mn)As capped with amorphous arsenic : effects of annealing time
  • 2006
  • Ingår i: Applied Surface Science. - : Elsevier BV. - 0169-4332 .- 1873-5584. ; 252:19, s. 7252-7254
  • Tidskriftsartikel (refereegranskat)abstract
    • The influence of annealing time on an amorphous As cap layer and the depth distribution of Mn atoms have been investigated. The results show that a 1600 Å thick As cap layer is completely desorbed after 3 h of annealing time. The depth distributions of Mn indicate that interstitial Mn atoms have diffused to the outer surface and being passivated. The thickness of the Mn passivation layer was around 90 Å.
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8.
  • Bjorstrom, C. M., et al. (författare)
  • Vertical phase separation in spin-coated films of a low bandgap polyfluorene/PCBM blend - Effects of specific substrate interaction
  • 2007
  • Ingår i: Applied Surface Science. - Amsterdam : Elsevier BV. - 0169-4332 .- 1873-5584. ; 253:8, s. 3906-3912
  • Tidskriftsartikel (refereegranskat)abstract
    • We report on the effect of the substrate on the vertical phase separation in spin-coated thin films of poly [(9,9-dioctylfluorenyl-2,7-diyl)-co-5,5-4',7'-di-2-thienyl-2',1',3'-benz othiadiazole] (APFO-3) blended with [6,6]-phenyl-C-61-butyric acid methyl ester (PCBM). Compositional depth profiles of the films are measured by dynamic secondary ion mass spectrometry (SIMS). We found that changing the substrate from silicon to gold affects the composition profile near the substrate interface. This is caused by a specific interaction between the polymer (APFO-3) and the gold surface, as confirmed by X-ray photoelectron spectroscopy (XPS). The composition profile in the area away from the substrate interface, as well as the enrichment of the free surface with APFO-3, remain however unaffected by the choice of substrate. The vertical composition was also analysed for APFO-3:PCBM films spin-coated on indium tin oxide (ITO) coated with a thin layer of (3,4-ethylenedioxythiophene) poly(styrenesulfonate) (PEDOT:PSS). (c) 2006 Elsevier B.V. All rights reserved.
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9.
  • Brohede, Ulrika, et al. (författare)
  • A novel graded bioactive high adhesion implant coating
  • 2009
  • Ingår i: Applied Surface Science. - : Elsevier BV. - 0169-4332 .- 1873-5584. ; 255:17, s. 7723-7728
  • Tidskriftsartikel (refereegranskat)abstract
    •  One method to increase the clinical success rate of metal implants is to increase their bone bonding properties, i.e. to develop a bone   bioactive surface leading to reduced risks of interfacial problems.   Much research has been devoted to modifying the surface of metals to   make them become bioactive. Many of the proposed methods include   depositing a coating on the implant. However, there is a risk of coating failure due to low substrate adhesion. This paper describes a method to obtain bioactivity combined with a high coating adhesion via   a gradient structure of the coating. Gradient coatings were deposited   on Ti (grade 5) using reactive magnetron sputtering with increasing   oxygen content. To increase the grain size in the coating, all coatings   were post annealed at 385 degrees C. The obtained coating exhibited a gradual transition over 70 nm from crystalline titanium oxide (anatase)  at the surface to metallic Ti in the substrate, as shown using  cross-section transmission electron microscopy and X-ray photoelectron   spectroscopy depth pro. ling. Using scratch testing, it could be shown that the adhesion to the substrate was well above 1 GPa. The bioactivity of the coating was verified in vitro by the spontaneous   formation of hydroxylapatite upon storage in phosphate buffer solution at 37 degrees C for one week.   The described process can be applied to implants irrespective of bulk  metal in the base and should introduce the possibility to create safer permanent implants like reconstructive devices, dental, or spinal implants.
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10.
  • Canestraro, Carla Daniele, et al. (författare)
  • Strong inter-conduction-band absorption in heavily fluorine doped tin oxide
  • 2008
  • Ingår i: Applied Surface Science. - : Elsevier BV. - 0169-4332 .- 1873-5584. ; 255:5, s. 1874-1879
  • Tidskriftsartikel (refereegranskat)abstract
    • The optical, electrical and structural properties of thin. film tin oxide (TO), F-doped tin oxide (FTO; n(F) approximate to 6 x 10(20) cm (3)) and highly F-doped tin oxide (hFTO; n(F) approximate to 10 x 10(20) cm (3)), grown by spray pyrolysis technique, are studied by atomic force microscopy, Hall effect, X-ray. fluorescence and transmission/reflection measurements. The resistivity (rho = 32 x 10 (4) Omega cm for intrinsic tin oxide) shows intriguing characteristics when F concentration n(F) is increased (rho = 6 x 10 (4) Omega cm for FTO but 25 x 10 (4) Omega cm for hFTO) whereas the carrier concentration is almost constant at high F concentration (n(c) approximate to 6 x 10(20) cm (3) for FTO and hFTO). Thus, F seems to act both as a donor and a compensating acceptor in hFTO. The high carrier concentration has a strong effect on the optical band-edge absorption. Whereas intrinsic TO has room-temperature band-gap energy of E-g approximate to 3.2 eV with an onset to absorption at about 3.8 eV, the highly doped FTO and hFTO samples show relatively strong absorption at 2-3 eV. Theoretical analysis based on density functional calculations of FTO reveals that this is not a defect state within the band-gap region, but instead a consequence of a hybridization of the F donor states with the host conduction band in combination with a band. filling of the lowest conduction band by the free carriers. This allows photon-assisted inter-conduction band transitions of the free electrons to energetically higher and empty conduction bands, producing the below-gap absorption peak.
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