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- Stehr, Jan Eric, et al.
(författare)
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Zinc-Vacancy–Donor Complex : A Crucial Compensating Acceptor in ZnO
- 2014
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Ingår i: Physical Review Applied. - : American Physical Society. - 2331-7019. ; 2:021001
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Tidskriftsartikel (refereegranskat)abstract
- The aluminum–zinc-vacancy (Al Zn −V Zn ) complex is identified as one of the dominant defects in Al-containing n -type ZnO after electron irradiation at room temperature with energies above 0.8 MeV. The complex is energetically favorable over the isolated V Zn , binding more than 90% of the stable V Zn ’s generated by the irradiation. It acts as a deep acceptor with the (0/− ) energy level located at approximately 1 eV above the valence band. Such a complex is concluded to be a defect of crucial and general importance that limits the n -type doping efficiency by complex formation with donors, thereby literally removing the donors, as well as by charge compensation.
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