| 1. |
- Aurino, Pier Paolo, 1985, et al.
(författare)
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Retention of Electronic Conductivity in LaAlO3/SrTiO3 Nanostructures Using a SrCuO2 Capping Layer
- 2016
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Ingår i: Physical Review Applied. - : American Physical Society. - 2331-7019. ; 6:2
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Tidskriftsartikel (refereegranskat)abstract
- The interface between two wide band-gap insulators, LaAlO3 and SrTiO3 (LAO/STO) offers a unique playground to study the interplay and competitions between different ordering phenomena in a strongly correlated two- dimensional electron gas. Recent studies of the LAO/STO interface reveal the inhomogeneous nature of the 2DEG that strongly influences electrical-transport properties. Nanowires needed in future applications may be adversely affected, and our aim is, thus, to produce a more homogeneous electron gas. In this work, we demonstrate that nanostructures fabricated in the quasi-2DEG at the LaAlO3/SrTiO3 interface, capped with a SrCuO2 layer, retain their electrical resistivity and mobility independent of the structure size, ranging from 100 nm to 30 mu m. This is in contrast to noncapped LAO/STO structures, where the room-temperature electrical resistivity significantly increases when the structure size becomes smaller than 1 mu m. High-resolution intermodulation electrostatic force microscopy reveals an inhomogeneous surface potential with "puddles" of a characteristic size of 130 nm in the noncapped samples and a more uniform surface potential with a larger characteristic size of the puddles in the capped samples. In addition, capped structures show superconductivity below 200 mK and nonlinear currentvoltage characteristics with a clear critical current observed up to 700 mK. Our findings shed light on the complicated nature of the 2DEG at the LAO/STO interface and may also be used for the design of electronic devices.
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| 2. |
- Bejanin, J. H., et al.
(författare)
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Three-Dimensional Wiring for Extensible Quantum Computing: The Quantum Socket
- 2016
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Ingår i: Physical Review Applied. - 2331-7019. ; 6:4
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Tidskriftsartikel (refereegranskat)abstract
- Quantum computing architectures are on the verge of scalability, a key requirement for the implementation of a universal quantum computer. The next stage in this quest is the realization of quantum error-correction codes, which will mitigate the impact of faulty quantum information on a quantum computer. Architectures with ten or more quantum bits (qubits) have been realized using trapped ions and superconducting circuits. While these implementations are potentially scalable, true scalability will require systems engineering to combine quantum and classical hardware. One technology demanding imminent efforts is the realization of a suitable wiring method for the control and the measurement of a large number of qubits. In this work, we introduce an interconnect solution for solid-state qubits: the quantum socket. The quantum socket fully exploits the third dimension to connect classical electronics to qubits with higher density and better performance than two-dimensional methods based on wire bonding. The quantum socket is based on spring-mounted microwires-the three-dimensional wires-that push directly on a microfabricated chip, making electrical contact. A small wire cross section (approximately 1 mm), nearly nonmagnetic components, and functionality at low temperatures make the quantum socket ideal for operating solid-state qubits. The wires have a coaxial geometry and operate over a frequency range from dc to 8 GHz, with a contact resistance of approximately 150 m Omega, an impedance mismatch of approximately 10 Omega, and minimal cross talk. As a proof of principle, we fabricate and use a quantum socket to measure high-quality superconducting resonators at a temperature of approximately 10 mK. Quantum error-correction codes such as the surface code will largely benefit from the quantum socket, which will make it possible to address qubits located on a two-dimensional lattice. The present implementation of the socket could be readily extended to accommodate a quantum processor with a (10 x 10)-qubit lattice, which would allow for the realization of a simple quantum memory.
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| 3. |
- Booker, Ian Don, et al.
(författare)
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Oxidation-induced deep levels in n- and p-type 4H- and 6H-SiC and their influence on carrier lifetime
- 2016
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Ingår i: Physical Review Applied. - : American Physical Society. - 2331-7019. ; 6:1, s. 1-15
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Tidskriftsartikel (refereegranskat)abstract
- We present a complete analysis of the electron- and hole-capture and -emission processes of the deep levels ON1, ON2a, and ON2b in 4H-SiC and their 6H-SiC counterparts OS1a and OS1b through OS3a and OS3b, which are produced by lifetime enhancement oxidation or implantation and annealing techniques. The modeling is based on a simultaneous numerical fitting of multiple high-resolution capacitance deep-level transient spectroscopy spectra measured with different filling-pulse lengths in n- and p-type material. All defects are found to be double-donor-type positive-U two-level defects with very small hole-capture cross sections, making them recombination centers of low efficiency, in accordance with minority-carrier-lifetime measurements. Their behavior as trapping and weak recombination centers, their large concentrations resulting from the lifetime enhancement oxidations, and their high thermal stability, however, make it advisable to minimize their presence in active regions of devices, for example, the base layer of bipolar junction transistors.
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| 4. |
- Fuertes Marrón, D., et al.
(författare)
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Quantitative Determination of Luminescent Coupling in Multijunction Solar Cells from Spectral Photovoltage Measurements
- 2016
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Ingår i: Physical Review Applied. - 2331-7019. ; 6:1
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Tidskriftsartikel (refereegranskat)abstract
- We present a simple method to quantify the magnitude of luminescent coupling (LC) between stacked subcells in multijunction photovoltaic devices. The effect of luminescence produced at high-band-gap subcells on underlying low-gap units within the same device can be directly accessed as a measurable open-circuit voltage difference by comparing two photovoltage spectra. Additionally, our study unambiguously identifies LC as the modulation mechanism across multijunction solar cells generating a response from buried subcells in photoreflectance measurements.
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| 5. |
- MacMinn, Christopher W., et al.
(författare)
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Large Deformations of a Soft Porous Material
- 2016
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Ingår i: Physical Review Applied. - : American Physical Society. - 2331-7019. ; 5:4
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Tidskriftsartikel (refereegranskat)abstract
- Compressing a porous material will decrease the volume of the pore space, driving fluid out. Similarly, injecting fluid into a porous material can expand the pore space, distorting the solid skeleton. This poromechanical coupling has applications ranging from cell and tissue mechanics to geomechanics and hydrogeology. The classical theory of linear poroelasticity captures this coupling by combining Darcy's law with Terzaghi's effective stress and linear elasticity in a linearized kinematic framework. Linear poroelasticity is a good model for very small deformations, but it becomes increasingly inappropriate for moderate to large deformations, which are common in the context of phenomena such as swelling and damage, and for soft materials such as gels and tissues. The well-known theory of large-deformation poroelasticity combines Darcy's law with Terzaghi's effective stress and nonlinear elasticity in a rigorous kinematic framework. This theory has been used extensively in biomechanics to model large elastic deformations in soft tissues and in geomechanics to model large elastoplastic deformations in soils. Here, we first provide an overview and discussion of this theory with an emphasis on the physics of poromechanical coupling. We present the large-deformation theory in an Eulerian framework to minimize the mathematical complexity, and we show how this nonlinear theory simplifies to linear poroelasticity under the assumption of small strain. We then compare the predictions of linear poroelasticity with those of large-deformation poroelasticity in the context of two uniaxial model problems: fluid outflow driven by an applied mechanical load (the consolidation problem) and compression driven by a steady fluid throughflow. We explore the steady and dynamical errors associated with the linear model in both situations, as well as the impact of introducing a deformation-dependent permeability. We show that the error in linear poroelasticity is due primarily to kinematic nonlinearity and that this error (i) plays a surprisingly important role in the dynamics of the deformation and (ii) is amplified by nonlinear constitutive behavior, such as deformation-dependent permeability.
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| 6. |
- Morgan, Caitlin, et al.
(författare)
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Impact of tunnel-barrier strength on magnetoresistance in carbon nanotubes
- 2016
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Ingår i: Physical Review Applied. - 2331-7019. ; 5:5, s. 054010-
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Tidskriftsartikel (refereegranskat)abstract
- We investigate magnetoresistance in spin valves involving CoPd-contacted carbon nanotubes. Both the temperature and bias-voltage dependence clearly indicate tunneling magnetoresistance as the origin. We show that this effect is significantly affected by the tunnel-barrier strength, which appears to be one reason for the variation between devices previously detected in similar structures. Modeling the data by means of the scattering matrix approach, we find a nontrivial dependence of the magnetoresistance on the barrier strength. Furthermore, an analysis of the spin precession observed in a nonlocal Hanle measurement yields a spin lifetime of tau_s=1.1 ns, a value comparable with those found in silicon- or graphene-based spin-valve devices.
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| 7. |
- Moubah, Reda, et al.
(författare)
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Discrete Layer-by-Layer Magnetic Switching in Fe/MgO(001) Superlattices
- 2016
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Ingår i: Physical Review Applied. - : American physical society. - 2331-7019. ; 5:4
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Tidskriftsartikel (refereegranskat)abstract
- We report on a discrete layer-by-layer magnetic switching in Fe/MgO superlattices driven by an antiferromagnetic interlayer exchange coupling. The strong interlayer coupling is mediated by tunneling through MgO layers with thicknesses up to at least 1.8 nm, and the coupling strength varies with MgO thickness. Furthermore, the competition between the interlayer coupling and magnetocrystalline anisotropy stabilizes both 90 degrees and 180 degrees periodic alignment of adjacent layers throughout the entire superlattice. The tunable layer-by-layer switching, coupled with the giant tunneling magnetoresistance of Fe/MgO/Fe junctions, is an appealing combination for three-dimensional spintronic memories and logic devices.
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| 8. |
- Niethammer, Matthias, et al.
(författare)
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Vector Magnetometry Using Silicon Vacancies in 4H-SiC Under Ambient Conditions
- 2016
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Ingår i: PHYSICAL REVIEW APPLIED. - : AMER PHYSICAL SOC. - 2331-7019. ; 6:3
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Tidskriftsartikel (refereegranskat)abstract
- Point defects in solids promise precise measurements of various quantities. Especially magnetic field sensing using the spin of point defects has been of great interest recently. When optical readout of spin states is used, point defects achieve optical magnetic imaging with high spatial resolution at ambient conditions. Here, we demonstrate that genuine optical vector magnetometry can be realized using the silicon vacancy in SiC, which has an uncommon S = 3/2 spin. To this end, we develop and experimentally test sensing protocols based on a reference field approach combined with multifrequency spin excitation. Our work suggests that the silicon vacancy in an industry-friendly platform, SiC, has the potential for various magnetometry applications under ambient conditions.
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| 9. |
- Shaikhaidarov, R., et al.
(författare)
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Detection of Coherent Terahertz Radiation from a High-Temperature Superconductor Josephson Junction by a Semiconductor Quantum-Dot Detector
- 2016
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Ingår i: Physical Review Applied. - 2331-7019. ; 5:2
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Tidskriftsartikel (refereegranskat)abstract
- We examine the application of Josephson radiation emitters to spectral calibration of single-photon-resolving detectors. Josephson junctions are patterned in a YBCO film on a bicrystal sapphire substrate and are voltage controlled to generate radiation in the frequency range of 0.05-1 THz. The detector used in this work consists of a gate-defined quantum-dot photon-to-charge transducer coupled to a single-electron transistor. Both the emitter and the detector are equipped with a matching on-chip wide-band antenna. The combination of a tuneable emitter and detector allows us to determine the efficacy of the YBCO emitter and also to analyze the elementary processes involved in the detection.
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| 10. |
- Wisby, I. S., et al.
(författare)
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Angle-Dependent Microresonator ESR Characterization of Locally Doped Gd3+:Al2O3
- 2016
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Ingår i: Physical Review Applied. - 2331-7019. ; 6:2
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Tidskriftsartikel (refereegranskat)abstract
- Interfacing rare-earth-doped crystals with superconducting circuit architectures provides an attractive platform for quantum memory and transducer devices. Here, we present the detailed characterization of such a hybrid system: a locally implanted rare-earth Gd3+ in Al2O3 spin system coupled to a superconducting microresonator. We investigate the properties of the implanted spin system through angular-dependent microresonator electron spin resonance (micro-ESR) spectroscopy. We find, despite the high-energy near-surface implantation, the resulting micro-ESR spectra to be in excellent agreement with the modeled Hamiltonian, supporting the integration of dopant ions into their relevant lattice sites while maintaining crystalline symmetries. Furthermore, we observe clear contributions from individual microwave field components of our microresonator, emphasizing the need for controllable local implantation.
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