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Sökning: LAR1:hh > Linnéuniversitetet > Pertsova Anna

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1.
  • Gooth, Johannes, et al. (författare)
  • Local Magnetic Suppression of Topological Surface States in Bi2Te3 Nanowires
  • 2016
  • Ingår i: ACS Nano. - Washington : American Chemical Society (ACS). - 1936-0851 .- 1936-086X. ; 10:7, s. 7180-7188
  • Tidskriftsartikel (refereegranskat)abstract
    • Locally induced, magnetic order on the surface of a topological insulator nanowire could enable room-temperature topological quantum devices. Here we report on the realization of selective magnetic control over topological surface states on a single facet of a rectangular Bi2Te3 nanowire via a magnetic insulating Fe3O4 substrate. Low-temperature magnetotransport studies provide evidence for local time-reversal symmetry breaking and for enhanced gapping of the interfacial 1D energy spectrum by perpendicular magnetic-field components, leaving the remaining nanowire facets unaffected. Our results open up great opportunities for development of dissipation-less electronics and spintronics.
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2.
  • Kumar, Sandeep, et al. (författare)
  • Magnetic polarons and large negative magnetoresistance in GaAs nanowires implanted with Mn ions
  • 2013
  • Ingår i: Nano letters (Print). - Washington, United States : American Chemical Society (ACS). - 1530-6984 .- 1530-6992. ; 13:11, s. 5079-5084
  • Tidskriftsartikel (refereegranskat)abstract
    • We report on low-temperature magnetotransport and SQUID measurements on heavily doped Mn-implanted GaAs nanowires. SQUID data recorded at low magnetic fields exhibit clear signs of the onset of a spin-glass phase with a transition temperature of about 16 K. Magnetotransport experiments reveal a corresponding peak in resistance at 16 K and a remarkably large negative magnetoresistance, reaching 40 % at 1.6 K and 8 T. The negative magnetoresistance decreases at elevated temperatures and vanishes at about 100 K. We interpret our transport data in terms of spin-dependent hopping in a complex magnetic nanowire landscape of magnetic polarons forming a paramagnetic/spin-glass phase.
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3.
  • Paschoal Jr., Waldomiro, 1977-, et al. (författare)
  • Magnetoresistance in Mn ion-implanted GaAs:Zn nanowires
  • 2014
  • Ingår i: Applied Physics Letters. - New York : American Institute of Physics (AIP). - 0003-6951 .- 1077-3118. ; 104:15
  • Tidskriftsartikel (refereegranskat)abstract
    • We have investigated the magnetoresistance (MR) in a series of Zn doped (p-type) GaAs nanowires implanted with different Mn concentrations. The nanowires with the lowest Mn concentration (~0.0001%) exhibit a low resistance of a few kΩ at 300K and a 4% positive MR at 1.6K, which can be well described by invoking a spin-split subband model. In contrast, nanowires with the highest Mn concentration (4%) display a large resistance of several MΩ at 300K and a large negative MR of 85% at 1.6K. The large negative MR is interpreted in terms of spin-dependent hopping in a complex magnetic nanowire landscape of magnetic polarons, separated by intermediate regions of Mn impurity spins. Sweeping the magnetic field back and forth for the 4% sample reveals a hysteresis that indicates the presence of a weak ferromagnetic phase. We propose co-doping with Zn to be a promising way to reach the goal of realizing ferromagnetic Ga1-xMnxAs nanowires for future nanospintronics. © 2014 AIP Publishing LLC.
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