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Träfflista för sökning "LAR1:liu ;pers:(Syväjärvi Mikael);srt2:(2000-2004);pers:(Strokan N B)"

Sökning: LAR1:liu > Syväjärvi Mikael > (2000-2004) > Strokan N B

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1.
  • Strokan, N.B., et al. (författare)
  • Detection of strongly and weakly ionizing radiation by triode structure based on SIC films
  • 2003
  • Ingår i: Journal of Applied Physics. - 0021-8979. ; 93:9, s. 5714-5719
  • Tidskriftsartikel (refereegranskat)abstract
    • The detection of strongly and weakly ionizing radiation by triode structure based on silicon carbide (SiC) films was discussed. The possibility of alpha particle spectrometry in spite of slow carrier transport via diffusion was demonstrated. Analysis showed that the signal generated by weakly ionizing radiation incident on a film had low amplitude.
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2.
  • Strokan, N.B., et al. (författare)
  • Radiation resistance of transistor- and diode-type SiC detectors irradiated with 8-MeV protons
  • 2004
  • Ingår i: Semiconductors (Woodbury, N.Y.). - 1063-7826. ; 38:7, s. 807-811
  • Tidskriftsartikel (refereegranskat)abstract
    • Nuclear-particle detectors based on SiC with a structure composed of an n+-type substrate, a p-type epitaxial layer, and a Schottky barrier are studied. Structures with a ~10-µm-thick 6H-SiC layer exhibit transistor properties, whereas those with a ~30-µm-thick 4H-SiC layer exhibit diode properties. It is established that a more than tenfold amplification of the signal is observed in the transistor-type structure. The amplification is retained after irradiation with 8-MeV protons with a dose of at least 5 × 1013 cm-2, in this case, the resolution is =10%. Amplification of the signal was not observed in the structures of diode type. However, there were diode-type detectors with a resolution of ˜3%, which is acceptable for a number of applications, even after irradiation with the highest dose of 2 × 1014 cm-2. © 2004 MAIK "Nauka/Interperiodica".
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