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Sökning: LAR1:lu > (2010-2011) > Högskolan i Halmstad > Messing Maria

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  • Borschel, Christian, et al. (författare)
  • A New Route toward Semiconductor Nanospintronics: Highly Mn-Doped GaAs Nanowires Realized by Ion-Implantation under Dynamic Annealing Conditions
  • 2011
  • Ingår i: Nano Letters. - The American Chemical Society. - 1530-6992. ; 11:9, s. 3935-3940
  • Tidskriftsartikel (refereegranskat)abstract
    • We report on highly Mn-doped GaAs nanowires (NWs) of high crystalline quality fabricated by ion beam implantation, a technique that allows doping concentrations beyond the equilibrium solubility limit. We studied two approaches for the preparation of Mn-doped GaAs NWs: First, ion implantation at room temperature with subsequent annealing resulted in polycrystalline NWs and phase segregation of MnAs and GaAs. The second approach was ion implantation at elevated temperatures. In this case, the single-crystallinity of the GaAs NWs was maintained, and crystalline, highly Mn-doped GaAs NWs were obtained. The electrical resistance of such NWs dropped with increasing temperature (activation energy about 70 meV). Corresponding magnetoresistance measurements showed a decrease at low temperatures, indicating paramagnetism. Our findings suggest possibilities for future applications where dense arrays of GaMnAs nanowires may be used as a new kind of magnetic material system.
  • Suyatin, Dmitry, et al. (författare)
  • Nano-Schottky Contacts Realized by Bottom-up Technique
  • 2010
  • Ingår i: INEC: 2010 3rd International Nanoelectronics Conference, vols 1 and 2. - IEEE--Institute of Electrical and Electronics Engineers Inc.. ; s. 252-253
  • Konferensbidrag (refereegranskat)abstract
    • Properties of nanostructures realized by bottom-up techniques are often different from their bulk counterparts.(1) Here we present a study of a nano-Schottky contact formed at the interface between a gold catalytic particle and an epitaxially grown GaxIn1-xAs/InAs nanowire. Selective electrical connections formed to the catalytic particle on one side and to the In As segment on the other side allowed electrical and optical characterization of the formed junction. We demonstrate that the heterostructure region adjacent to the catalytic particle may act as an ultra-small volume unipolar photodetector with potentially ultra-fast response.
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