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Search: WFRF:(Abdi E) > Royal Institute of Technology

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1.
  • Abdi, Y., et al. (author)
  • Light-emitting nano-porous silicon structures fabricated using a plasma hydrogenation technique
  • 2005
  • In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology. - : Elsevier BV. - 0921-5107. ; 124-125:SUPPL., s. 483-487
  • Journal article (peer-reviewed)abstract
    • The preparation of porous silicon films by DC-plasma hydrogenation and subsequent annealing of amorphous silicon films on silicon and glass substrates is reported for the first time. The effects of varying plasma power and annealing temperatures have been investigated and characterized by scanning-electron microscopy, transmission-electron microscopy, and photoluminescence. A plasma density of about 5.5 W/m2 and hydrogenation-annealing temperatures of about 400 °C was found to be suitable for the formation of nano-crystalline silicon films with grain diameters of the order of 3-10 nm. The intensity and wavelength of the emitted visible light were found to depend on the hydrogenation and annealing conditions, and patterning of the silicon films using standard lithography allowed the creation of light-emitting patterns.
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2.
  • Derakhshandeh, J., et al. (author)
  • Fabrication of 100 nm gate length MOSFET's using a novel carbon nanotube-based nano-lithography
  • 2005
  • In: Materials Science & Engineering. - : Elsevier BV. - 0921-5107 .- 1873-4944. ; 124, s. 354-358
  • Journal article (peer-reviewed)abstract
    • PECVD-grown carbon nanotubes on (100)silicon substrates have been studied and exploited for electron emission applications. After the growth of vertical CNT's [Y. Abdi, J. Koohsorkhi, J. Derakhshandeh, S. Mohajerzadeh, H. Hosseinzadegan, M.D. Robertson, C. Benet, EMRS Spring Meeting, Strasbourg, France, May 2005] the grown nanotubes are encapsulated by means of an insulating TiO(2) layer, leading to beam-shape emission of electrons from the cathode towards the opposite anode electrode. The electron emission occurs using an anode-cathode voltage of 100 V with ability of direct writing on a photo-resist-coated substrates. Straight lines with widths between 50 and 200 nm have been successfully drawn. This technique has been applied on P-type (100)silicon substrates for the formation of the gate of N-MOSFET devices. The successful realization of MOSFET devices indicates its usefulness for applications in nano-electronic devices. This device has inversion Cox exceeding 0.7 mu F/cm(2), drive current equal to 3 10 mu A/mu m.
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  • Result 1-3 of 3

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