| 1. |
- Abgrall, N., et al.
(författare)
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The large enriched germanium experiment for neutrinoless double beta decay (LEGEND)
- 2017
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Ingår i: AIP Conference Proceedings. - : Author(s). - 1551-7616 .- 0094-243X. ; 1894
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Konferensbidrag (refereegranskat)abstract
- The observation of neutrinoless double-beta decay (0νββ) would show that lepton number is violated, reveal that neu-trinos are Majorana particles, and provide information on neutrino mass. A discovery-capable experiment covering the inverted ordering region, with effective Majorana neutrino masses of 15 - 50 meV, will require a tonne-scale experiment with excellent energy resolution and extremely low backgrounds, at the level of ∼0.1 count /(FWHM·t·yr) in the region of the signal. The current generation 76Ge experiments GERDA and the Majorana Demonstrator, utilizing high purity Germanium detectors with an intrinsic energy resolution of 0.12%, have achieved the lowest backgrounds by over an order of magnitude in the 0νββ signal region of all 0νββ experiments. Building on this success, the LEGEND collaboration has been formed to pursue a tonne-scale 76Ge experiment. The collaboration aims to develop a phased 0νββ experimental program with discovery potential at a half-life approaching or at 1028 years, using existing resources as appropriate to expedite physics results.
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| 2. |
- Pavlov, S. G., et al.
(författare)
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Terahertz emission from phosphor centers in SiGe and SiGe/Si semiconductors
- 2008
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Konferensbidrag (refereegranskat)abstract
- Terahertz-range photoluminescence from silicon-germanium crystals and superlattices doped by phosphor has been studied under optical excitation by radiation from a mid-infrared CO2 laser at low temperature. SiGe crystals with a Ge content between 0.9 and 6.5%, doped by phosphor with a concentration optimal for silicon laser operation, do not exhibit terahertz gain. On the contrary, terahertz-range gain of ∼ 2.3-3.2 cm-1 has been observed for donor-related optical transitions in Si/SiGe strained superlattices at pump intensities above 100 kW/cm2.
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| 3. |
- Zhukavin, R. Kh, et al.
(författare)
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Terahertz-range spontaneous emission under the optical excitation of donors in uniaxially stressed bulk silicon and SiGe/Si heterostructures
- 2015
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Ingår i: Semiconductors (Woodbury, N.Y.). - 1063-7826 .- 1090-6479. ; 49:1, s. 13-18
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Tidskriftsartikel (refereegranskat)abstract
- The results of measurements of the total terahertz-range photoluminescence of Group-V donors (phosphorus, antimony, bismuth, arsenic) in bulk silicon and SiGe/Si heterostructures depending on the excitation intensity are presented. The signal of bulk silicon was also measured as a function of uniaxial stress. The results of measurement of the dependence of the spontaneous emission intensity on the uniaxial stress is in rather good agreement with theoretical calculations of the relaxation times of excited states of donors in bulk silicon. Comparative measurements of the spontaneous emission from various strained heterostructures showed that the photoluminescence signal is caused by donor-doped silicon regions.
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| 4. |
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| 5. |
- Markevich, V.P., et al.
(författare)
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Electronic properties of vacancy-oxygen complexes in SiGe alloys
- 2003
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Ingår i: Physica. B, Condensed matter. - : Elsevier BV. - 0921-4526 .- 1873-2135. ; 340, s. 790-4
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Tidskriftsartikel (refereegranskat)abstract
- Capacitance transient techniques, combined with ab initio modeling, were employed to study the electronic properties and structure of vacancy-oxygen (VO) complexes in unstrained Czochralski-grown Si1-xGex crystals (0
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| 6. |
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