| 1. |
- Kopp, C., et al.
(författare)
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Very compact FTTH Diplexer design using advanced wafer level fabrication methods
- 2008
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Ingår i: MICRO-OPTICS 2008. - Strasbourg : SPIE.
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Konferensbidrag (refereegranskat)abstract
- FTTH networks require implementing a diplexer at each user termination. According to most of the standards, this diplexer detects a download signal beam at 1.49ÎŒm and emits an upload signal beam at 1.31ÎŒm on the same single mode fibre. Both signals exhibit datarate speed below 2.5Gbps. Today, most of the diplexers are obtained by actively aligning a set of individual optoelectronic components and micro-optics. However, new manufacturing solutions satisfying very low cost and mass production capability requirements of this market would help to speed the massive spreading of this technology. In this paper, we present an original packaging design to manufacture Diplexer Optical Sub-Assembly for FTTH application. A dual photodiode is stacked over a VCSEL and detects both the download signal beam at 1.49ÎŒm passing through the laser and one part of the upload signal beam at 1.31ÎŒm for monitoring. To satisfy this approach, an innovative VCSEL has been designed to have a very high transmission at 1.49ÎŒm. All these components are mounted on a very small circuit board on glass including also integrated circuits such as transimpedance amplifier. So, the device combines advanced optoelectronic components and highly integrated Multi-Chip-Module on glass approach using collective wafer-level assembling technologies. For the single mode fibre optical coupling, active and passive alignment solutions are considered.
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| 2. |
- Gustafsson, Oscar, et al.
(författare)
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Long-wavelength infrared quantum-dot based interband photodetectors
- 2011
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Ingår i: Infrared physics & technology. - : Elsevier BV. - 1350-4495 .- 1879-0275. ; 54:3, s. 287-291
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Tidskriftsartikel (refereegranskat)abstract
- We report on the design and fabrication of (Al)GaAs(Sb)/InAs tensile strained quantum-dot (QD) based detector material for thermal infrared imaging applications in the long-wavelength infrared (LWIR) regime. The detection is based on transitions between confined dot states and continuum states in a type-II band lineup, and we therefore refer to it as a dot-to-bulk (D2B) infrared photodetector with expected benefits including long carrier lifetime due to the type-II band alignment, suppressed Shockley-Read-Hall generation-recombination due to the relatively large-bandgap matrix material, inhibited Auger recombination processes due to the tensile strain and epitaxial simplicity. Metal-organic vapor-phase epitaxy was used to grow multiple (Al)GaAs(Sb) QD layers on InAs substrates at different QD nominal thicknesses, compositions, doping conditions and multilayer periods, and the material was characterized using atomic force and transmission electron microscopy, and Fourier-transform infrared absorption spectroscopy. Dot densities up to 1 x 10(11) cm(-2), 1 x 10(12) cm(-2) and 3 x 10(10) cm(-2) were measured for GaAs, AlGaAs and GaAsSb QDs, respectively. Strong absorption in GaAs, AlGaAs and GaAsSb multilayer QD samples was observed in the wavelength range 6-12 mu m. From the wavelength shift in the spectral absorption for samples with varying QD thickness and composition it is believed that the absorption is due to an intra- valance band transition. From this it is possible to estimate the type-II inter-band transition wavelength, thereby suggesting that (Al)GaAs(Sb) QD/InAs heterostructures are suitable candidates for LWIR detection and imaging.
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| 3. |
- Wang, Q., et al.
(författare)
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Multilayer InAs/InGaAs quantum dot structure grown by MOVPE for optoelectronic device applications
- 2006
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Ingår i: Nanoengineering: Fabrication, Properties, Optics, and Devices III. - : SPIE. ; , s. L3270-L3270
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Konferensbidrag (refereegranskat)abstract
- We report on a quantum dot (QD) structure grown on a 4" GaAs substrate by metal organic vapor phase epitaxy (MOVPE), which consists of five stacked InAs/InGaAs/GaAs QD layers embedded in the center of a typical in-plane waveguide. The density of the QDs is about 2.5 × 1010 cm -2 per QD layer. The photoluminescence (PL) peak wavelength at 1322 nm corresponding to the interband transition of the QD ground states was observed at room temperature with a full width at half-maximum of 49 meV. A good uniformity of the QD structure across the 4" wafer was verified with a variation of the PL peak wavelength of 0.9 % from the wafer center to the edge. Top p-contacts and a bottom n-contact were processed on the QD structure, and electroluminescence (EL) spectra were measured at different temperatures. An EL peak corresponding to the QD ground states emission was obtained at 1325 nm at room temperature.
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