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| 2. |
- Darakchieva, Vanya, et al.
(författare)
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Hydrogen in InN: A ubiquitous phenomenon in molecular beam epitaxy grown material
- 2010
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Ingår i: APPLIED PHYSICS LETTERS. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 96:8, s. 081907-
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Tidskriftsartikel (refereegranskat)abstract
- We study the unintentional H impurities in relation to the free electron properties of state-of-the-art InN films grown by molecular beam epitaxy (MBE). Enhanced concentrations of H are revealed in the near surface regions of the films, indicating postgrowth surface contamination by H. The near surface hydrogen could not be removed upon thermal annealing and may have significant implications for the surface and bulk free electron properties of InN. The bulk free electron concentrations were found to scale with the bulk H concentrations while no distinct correlation with dislocation density could be inferred, indicating a major role of hydrogen for the unintentional conductivity in MBE InN.
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| 3. |
- Chafik, L., et al.
(författare)
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Global linkages originating from decadal oceanic variability in the subpolar North Atlantic
- 2016
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Ingår i: Geophysical Research Letters. - 0094-8276 .- 1944-8007. ; 43:20, s. 10909-10919
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Tidskriftsartikel (refereegranskat)abstract
- The anomalous decadal warming of the subpolar North Atlantic Ocean (SPNA), and the northward spreading of this warm water, has been linked to rapid Arctic sea ice loss and more frequent cold European winters. Recently, variations in this heat transport have also been reported to covary with global warming slowdown/acceleration periods via a Pacific climate response. We here examine the role of SPNA temperature variability in this Atlantic-Pacific climate connectivity. We find that the evolution of ocean heat content anomalies from the subtropics to the subpolar region, likely due to ocean circulation changes, coincides with a basin-wide Atlantic warming/cooling. This induces an Atlantic-Pacific sea surface temperature seesaw, which in turn, strengthens/weakens the Walker circulation and amplifies the Pacific decadal variability that triggers pronounced global-scale atmospheric circulation anomalies. We conclude that the decadal oceanic variability in the SPNA is an essential component of the tropical interactions between the Atlantic and Pacific Oceans.
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| 4. |
- Lorenz, L, et al.
(författare)
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Hydrogen In Group‐III Nitrides: An Ion Beam Analysis Study
- 2011
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Ingår i: AIP Conference Proceedings, Volume 1336. - : AIP. - 9780735408913 ; , s. 310-313
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Konferensbidrag (refereegranskat)abstract
- The doping mechanisms of InN, a promising material for novel optoelectronic and electronic devices, are still not well understood. Unintentional hydrogen doping is one possibility that could explain the unintentional n‐type conductivity in high‐quality nominally undoped InN films. We measured a series of state‐of‐the‐art InN samples grown by molecular beam epitaxy with 2 MeV 4He‐ERDA and RBS, showing the presence of relatively high amounts of hydrogen not only at the surface, but also in a deeper layer. Strong depletion of hydrogen due to the analysing beam was observed and taken into account in the analysis. Here, we report on the details of the analysis and show how the results correlate with the free‐electron concentrations of the samples.
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| 5. |
- Darakchieva, Vanya, et al.
(författare)
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Role of impurities and dislocations for the unintentional n-type conductivity in InN
- 2009
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Ingår i: PHYSICA B-CONDENSED MATTER. - : Elsevier BV. - 0921-4526. ; 404:22, s. 4476-4481
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Tidskriftsartikel (refereegranskat)abstract
- We present a study on the role of dislocations and impurities for the unintentional n-type conductivity in high-quality InN grown by molecular beam epitaxy. The dislocation densities and H profiles in films with free electron concentrations in the low 10(17) cm(-1) and mid 10(18) cm(-3) range are measured, and analyzed in a comparative manner. It is shown that dislocations alone could not account for the free electron behavior in the InN films. On the other hand, large concentrations of H sufficient to explain, but exceeding substantially, the observed free electron densities are found. Furthermore, enhanced concentrations of H are revealed at the film surfaces, resembling the free electron behavior with surface electron accumulation. The low-conductive film was found to contain C and it is suggested that C passivates the H donors or acts as an acceptor, producing compensated material in this case. Therefore, it is concluded that the unintentional impurities play an important role for the unintentional n-type conductivity in InN. We suggest a scenario of H incorporation in InN that may reconcile the previously reported observations for the different role of impurities and dislocations for the unintentional n-type conductivity in InN.
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