| 1. |
- Kehoe, Laura, et al.
(författare)
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Make EU trade with Brazil sustainable
- 2019
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Ingår i: Science. - : American Association for the Advancement of Science (AAAS). - 0036-8075 .- 1095-9203. ; 364:6438, s. 341-
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Tidskriftsartikel (övrigt vetenskapligt/konstnärligt)
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| 2. |
- Bauer, Maris, et al.
(författare)
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Terahertz detection with graphene field-effect transistors
- 2015
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Ingår i: Graphene Week 2015.
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Konferensbidrag (refereegranskat)abstract
- Detectors for quasi-optical and guide THz waves are key elements of any THz technology. In recent years, there has been much progress in their development. Notably, field-effect transistors (FETs) have been shown to be well suited for detector implementation at room temperature exploiting (self-)mixing effects in their channels [1]. They reach a typical noise-equivalent power (NEP) of several tens of pW/Hz^1/2 at 0.6 THz in CMOS and other technologies. First focal-plane arrays and cameras have been implemented. Frequency coverage to at least 5 THz has been demonstrated. Recently, this type of detection concept has been extended successfully to graphene-based FETs [2] opening the way to freely positionable THz detectors on a wide variety of substrates (also flexible plastics). We have improved the technology (see Fig. 1) [3] and reach, for GFETs on Si, an optical NEP of 150 pW/Hz^1/2 at 0.3 THz, with considerable room for improvement. An unusually strong thermoelectric contribution has been identified [2, 3] which may help to engineer enhanced detector performance.
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| 3. |
- Bauer, Maris, et al.
(författare)
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The potential for sensitivity enhancement by the thermoelectric effect in carbon-nanotube and graphene Tera-FETs
- 2015
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Ingår i: Journal of Physics: Conference Series. - : IOP Publishing. - 1742-6588 .- 1742-6596. ; 647:1, s. UNSP 012004-
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Konferensbidrag (refereegranskat)abstract
- We report on terahertz (THz) measurements with graphene field-effect transistors with integrated antennas (Tera-FETs) lay special emphasis on thermoelectric contributions to the detected THz photoresponse. Graphene Tera-FETs with integrated broad-band bow-tie antennas were fabricated in a CVD-based growth process and were successfully applied for detection at 600 GHz with optical NEPs down to 515 pW/Hz^1/2. While rectification of THz radiation by (distributed) resistive mixing of charge-density waves induced in the gated transistor channel region is well known, significant additional contributions to the detected signal have experimentally been observed and hot-carrier thermoelectric effects have been identified as a possible origin of these signals. We also observe similar signal contributions in carbonnanotube transistors.
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| 4. |
- Cibiraite, D., et al.
(författare)
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Thermal noise-limited sensitivity of FET-based terahertz detectors
- 2017
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Ingår i: 2017 International Conference on Noise and Fluctuations, ICNF 2017, Vilnius, Lithuania, 20-23 June 2017.
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Konferensbidrag (refereegranskat)abstract
- Here we present a detailed study on estimation of noise-dependent parameters, such as signal-to-noise ratio (SNR) or noise equivalent power (NEP), of field-effect-transistor based terahertz detectors (TeraFETs). Commonly, these parameters are estimated from a well-known assumption, that detector's performance is limited by the thermal noise of transistor's channel. However, practice shows that the influence of other noise sources or transient effects is considerable. We summarize TeraFET noise measurements performed on different material systems based transistors, such as AlGaN/GaN, AlGaAs/GaAs, silicon CMOS, and monolayer graphene. We have achieved a good agreement between thermal noise and measured data. However, attention has to be paid to gate leakage currents and slow defect charging and discharging effects, which can strongly influence TeraFET's performance estimation.
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| 5. |
- McGinn, Steven, et al.
(författare)
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New Technologies for DNA analysis-A review of the READNA Project.
- 2016
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Ingår i: New Biotechnology. - : Elsevier BV. - 1876-4347 .- 1871-6784.
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Forskningsöversikt (refereegranskat)abstract
- The REvolutionary Approaches and Devices for Nucleic Acid analysis (READNA) project received funding from the European Commission for 4 1/2 years. The objectives of the project revolved around technological developments in nucleic acid analysis. The project partners have discovered, created and developed a huge body of insights into nucleic acid analysis, ranging from improvements and implementation of current technologies to the most promising sequencing technologies that constitute a 3(rd) and 4(th) generation of sequencing methods with nanopores and in situ sequencing, respectively.
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| 6. |
- Zak, Audrey, 1990, et al.
(författare)
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20 μm gate width CVD graphene FETs for 0.6 THz detection
- 2014
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Ingår i: International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz. - 2162-2027 .- 2162-2035. ; , s. Art. no. 6956250-
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Konferensbidrag (refereegranskat)abstract
- We have fabricated 20 μm gate width graphene field effect transistors (GFETs) based on graphene grown by chemical vapor deposition (CVD). These GFETs are integrated with split bow-tie antennae for room temperature, direct detection of a 0.6 THz signal. Our detectors reach a maximum optical responsivity of 3.0 V/W and a minimum noise-equivalent power (NEP) of 700 pW/Hz^0.5. The successful demonstration of THz detection using CVD graphene introduces the possibility for scalable detector production.
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| 7. |
- Zak, Audrey, 1990, et al.
(författare)
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Antenna-integrated 0.6 THz FET direct detectors based on CVD graphene
- 2014
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Ingår i: Nano Letters. - : American Chemical Society (ACS). - 1530-6992 .- 1530-6984. ; 14:10, s. 5834-5838
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Tidskriftsartikel (refereegranskat)abstract
- We present terahertz (THz) detectors based on top-gated graphene field effect transistors (GFETs) with integrated split-bow-tie antennas. The GFETs were fabricated using graphene grown by chemical vapor deposition (CVD). The THz detectors are capable of room-temperature rectification of a 0.6 THz signal and achieve a maximum optical responsivity better than 14 V/W and minimum optical noise-equivalent power (NEP) of 515 pW/Hz^0.5. Our results are a significant improvement over previous work on graphene direct detectors and are comparable to other established direct detector technologies. This is the first time room-temperature direct detection has been demonstrated using CVD graphene, which introduces the potential for scalable, wafer-level production of graphene detectors.
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