| 1. |
- Kögel, Benjamin, 1979, et al.
(författare)
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Integrated MEMS-tunable VCSELs for reconfigurable optical interconnects
- 2012
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Ingår i: Proceedings of SPIE - The International Society for Optical Engineering. - : SPIE. - 0277-786X .- 1996-756X. - 9780819489197 ; 8276, s. Article Number: 82760Q-
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Konferensbidrag (refereegranskat)abstract
- A simple and low-cost technology for tunable vertical-cavity surface-emitting lasers (VCSELs) with curved movable micromirror is presented. The micro-electro-mechanical system (MEMS) is integrated with the active optical component (so-called half-VCSEL) by means of surface-micromachining, using a reflown photoresist droplet as sacrificial layer. The technology is demonstrated for electrically pumped, short-wavelength (850nm) tunable VCSEts. Fabricated devices with 10 mu m oxide aperture are singlemode with sidemode suppression >35 dB, tunable over 24 mit with output power up to 0.5 mW, and have a beam divergence angle
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| 2. |
- Kögel, Benjamin, 1979, et al.
(författare)
-
Integrated MEMS-Tunable VCSELs Using a Self-Aligned Reflow Process
- 2012
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Ingår i: IEEE Journal of Quantum Electronics. - 0018-9197 .- 1558-1713. ; 48:2, s. 144-152
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Tidskriftsartikel (refereegranskat)abstract
- A simple microelectromechanical systems technology for wafer-scale integration of tunable vertical-cavity surface-emitting lasers (VCSELs) is presented. The key element is a self-aligned reflow process to form photoresist droplets, which serve as sacrificial layer and preform for a curved micromirror. Using a 3-D electromagnetic model, the half-symmetric cavity is optimized for singlemode emission. The technology is demonstrated for electrically pumped, short-wavelength (850 nm) tunable VCSELs, but is transferable to other wavelengths and material systems. Fabricated devices with 10 mu m large current aperture are singlemode and tunable over 24 nm. An improved high-speed design with reduced parasitic capacitance enables direct modulation with 3dB-bandwidths up to 6 GHz and data transmission at 5Gbit/s. Small signal analysis shows that the intrinsic parameters (resonance frequency and damping) are wavelength dependent through the differential gain.
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| 3. |
- Kögel, Benjamin, 1979, et al.
(författare)
-
Integrated Tunable VCSELs With Simple MEMS Technology
- 2010
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Ingår i: Semiconductor Laser Conference (ISLC), 2010 22nd IEEE International. - 0899-9406. - 9781424456833
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Konferensbidrag (refereegranskat)abstract
- A simple MEMS technology for wafer-scale fabrication of tunable VCSELs is presented. Reflown photo-resist droplets serve as preform for making curved movable micro-mirrors. First devices show a tuning range of 15 nm with mW-output power.
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| 4. |
- Kögel, Benjamin, 1979, et al.
(författare)
-
Singlemode tunable VCSELs with integrated MEMS technology
- 2011
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Ingår i: European Conference on Laser and Electro-Optics (CLEO/Europe).
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Konferensbidrag (refereegranskat)abstract
- A simple MEMS technology for wafer-scale integration of short-wavelength tunable VCSELs is presented. Using a 3D model the half-symmetric cavity is optimized for singlemode emission from 10 μm large apertures over 12 nm tuning range.
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| 5. |
- Larsson, Anders, 1957, et al.
(författare)
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High-speed tunable and fixed-wavelength VCSELs for short-reach optical links and interconnects
- 2012
-
Ingår i: Proceedings of SPIE - The International Society for Optical Engineering. - : SPIE. - 0277-786X .- 1996-756X. - 9780819489197 ; 8276, s. Article Number: 82760H-
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Konferensbidrag (refereegranskat)abstract
- This paper presents a review of recent work on high speed tunable and fixed wavelength vertical cavity surface emitting lasers (VCSELs) at Chalmers University of Technology. All VCSELs are GaAs-based, employ an oxide aperture for current and/or optical confinement, and emit around 850 nm. With proper active region and cavity designs, and techniques for reducing capacitance and thermal impedance, our fixed wavelength VCSELs have reached a modulation bandwidth of 23 GHz, which has enabled error-free 40 Gbps back-to-back transmission and 35 Gbps transmission over 100 m of multimode fiber. A MEMS-technology for wafer scale integration of tunable high speed VCSELs has also been developed. A tuning range of 24 nm and a modulation bandwidth of 6 GHz have been achieved, enabling error-free back-to-back transmission at 5 Gbps.
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| 6. |
- Larsson, Anders, 1957, et al.
(författare)
-
High speed VCSELs for optical interconnects
- 2012
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Ingår i: Conference Proceedings - International Conference on Indium Phosphide and Related Materials. - 1092-8669. - 9781467317252 ; , s. 269-272
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Konferensbidrag (refereegranskat)abstract
- This paper presents an overview of our recent work on high speed, oxide confined, 850 nm vertical cavity surface emitting lasers (VCSELs). With proper active region and cavity designs, and techniques for reducing capacitance and thermal impedance, we have reached a modulation bandwidth of 23 GHz and demonstrated 40 Gbps transmission. Using an integrated mode filter for reducing the spectral width we have extended the reach on multimode fiber at 25 Gbps from 100 to 500 m. Improved link capacity was also demonstrated using a more spectrally efficient multi-level modulation format (4-PAM). Finally, a MEMS-technology for wafer scale integration of tunable high speed VCSELs was developed, enabling a tuning range of 24 nm, a 6 GHz modulation bandwidth, and 5 Gbps transmission.
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