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- Johansson, Mikael, 1978, et al.
(författare)
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Process optimization for SiGe pMOSFETs using low temperature oxides on ultra-thin cap layers
- 2004
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Ingår i: Physica scripta. Topical Issues. - 0281-1847. ; T114, s. 97-99
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Konferensbidrag (refereegranskat)abstract
- We optimized the oxidation and annealing processes for SiGe quantum-well (QW) p-channel Metal-Oxide-Semiconductor Field-Effect Transistors (pMOSFETs) to maintain the strain in the channel and to suppress or eliminate the Si cap layer parasitic conduction. We fabricated and investigated poly-Si gated MOS capacitors incorporating 2nm low-temperature furnace oxides and optimized ultra-thin Si-cap layers. For these structures, we found that a rapid thermal annealing (RTA) thermal budget of 950°C, 30s could serve as a proper choice for gate dopants activation. © Physica Scripta 2004.
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- Johansson, Mikael, et al.
(författare)
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ZrO2 and ZrO2/Y2O3 gate dielectrics prepared by evaporation and annealing processes
- 2002
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Ingår i: ASDAM '02. Conference Proceedings. Fourth International Conference on Advanced Semiconductor Devices and Microsystems. ; , s. 279-
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Konferensbidrag (refereegranskat)abstract
- The electrical characteristics of MOS capacitors with ZrO2 gate dielectric prepared by e-beam evaporation of Zr or Yttrium Stabilized Zirconia (YSZ) and subsequent thermal treatment are reported. With this method dielectrics corresponding to an equivalent oxide thickness (EOT) of 1.9 nm and a relative dielectric constant of approximately 15 have been prepared. The effect of annealing on Zr incorporation into the Si substrate is investigated SIMS analysis showed no signs of Zr diffusion in the substrate at temperatures as high as 900°C and that significant diffusion from the dielectric layer occur only at 1100°C
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- Johansson, Mikael, et al.
(författare)
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ZrO2 gate dielectrics prepared by e-beam deposition of Zr and YSZ films and post annealing processes
- 2002
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Ingår i: ESSDERC 2002. Proceedings of the 32nd European Solid-State Device Research Conference. ; , s. 419-
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Konferensbidrag (refereegranskat)abstract
- In this paper we present the electrical performance of MOS capacitors with ZrO2 gate dielectric prepared by e-beam evaporation of zirconium and yttrium stabilized zirconia (YSZ) and subsequent thermal treatment. To this stage we have reached an equivalent oxide thickness (EOT) of 1.9 nm. The effect of post-oxidation annealing on Zr incorporation into the Si substrate is investigated. SIMS analysis showed no signs of Zr diffusion in the substrate at temperatures as high as 900°C and that significant diffusion occurs only at 1100°C
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- Yousif, M. Y. A., 1963, et al.
(författare)
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HfO2 for strained-Si and strained-SiGe MOSFETs
- 2003
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Ingår i: ESSDERC 2003. Proceedings of the 33rd European Solid-State Device Research - ESSDERC '03. - 1930-8876. - 0780379993 ; , s. 255-
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Konferensbidrag (refereegranskat)abstract
- We report on HfO2 gate dielectrics grown by atomic layer deposition (ALD) at 600°C on strained-Si and strained-SiGe layers. The strain status in the Si layer remained unaltered after HfO2 deposition and an interface state density of ~1×1011 cm-2 eV-1 was obtained for the case of thick HfO2 films. The breakdown fields were in the range 2-5 MV/cm, which is high compared to HfO2 films grown at higher temperatures. The leakage current was reduced by more than five orders of magnitude for the case of a thin HfO2 film with an EOT of 1.25 nm and ultra-thin cap (2.5-3 nm) layers on Si0.77Ge0.23/Si. The carrier transport through these HfO2 films was found to follow Frenkel-Poole emission over a wide range of applied gate voltage
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