| 1. |
- Monemar, Bo, 1942-, et al.
(författare)
-
Defects in Gallium Nitride
- 1999
-
Ingår i: International Workshop on Materials Science,1999. - Proc. of the International Workshop on Materials Science 99, ed. by F. F. Bekker et al., Vol. 1 : Hanoi National University Publishing House. ; , s. 28-
-
Konferensbidrag (refereegranskat)
|
|
| 2. |
|
|
| 3. |
- Monemar, Bo, 1942-, et al.
(författare)
-
The 3.466 eV Bound Exciton in GaN
- 2001
-
Ingår i: Physica status solidi. B, Basic research. - 0370-1972 .- 1521-3951. ; 228:2, s. 489-492
-
Tidskriftsartikel (refereegranskat)abstract
- We discuss the available optical data for the 3.466 eV bound exciton in GaN, which has been a controversial issue in the recent literature. We conclude that the experimental results are only consistent with the identification as an exciton bound at a neutral acceptor with a spin-like bound hole. The chemical identity is still not clear.
|
|
| 4. |
|
|
| 5. |
- Ayedh, H. M., et al.
(författare)
-
Controlling the carbon vacancy in 4H-SiC by thermal processing
- 2018
-
Ingår i: ECS Transactions. - : Electrochemical Society Inc.. - 1938-6737 .- 1938-5862. ; , s. 91-97
-
Konferensbidrag (refereegranskat)abstract
- The carbon vacancy (Vc) is perhaps the most prominent point defect in silicon carbide (SiC) and it is an efficient charge carrier lifetime killer in high-purity epitaxial layers of 4H-SÌC. The Vc concentration needs to be controlled and minimized for optimum materials and device performance, and an approach based on post-growth thermal processing under C-rich ambient conditions is presented. It utilizes thermodynamic equilibration and after heat treatment at 1500 °C for 1 h, the Vc concentration is shown to be reduced by a factor-25 relative to that in as-grown state-of-the-art epi-layers. Concurrently, a considerable enhancement of the carrier lifetime occurs throughout the whole of >40 urn thick epi-layers.
|
|
| 6. |
- Bergman, Peder, 1961-, et al.
(författare)
-
Improved SiC Epitaxial Material for Bipolar Applications
- 2008
-
Ingår i: Proc. of MRS Spring Meeting 2008. ; , s. D05-
-
Konferensbidrag (refereegranskat)abstract
- Epitaxial growth on Si-face nominally on-axis 4H-SiC substrates has been performed using horizontal Hot-wall chemical vapor deposition system. The formation of 3C inclusions is one of the main problem with growth on on-axis Si-face substrates. In situ surface preparation, starting growth parameters and growth temperature are found to play a vital role in the epilayer polytype stability. High quality epilayers with 100% 4H-SiC were obtained on full 2″ substrates. Different optical and structural techniques were used to characterize the material and to understand the growth mechanisms. It was found that the replication of the basal plane dislocation from the substrate into the epilayer can be eliminated through growth on on-axis substrates. Also, no other kind of structural defects were found in the grown epilayers. These layers have also been processed for simple PiN structures to observe any bipolar degradation. More than 70% of the diodes showed no forward voltage drift during 30 min operation at 100 A/cm2.
|
|
| 7. |
|
|
| 8. |
- Brosselard, P., et al.
(författare)
-
3.3 kV-10A 4H-SiC PiN diodes
- 2009
-
Ingår i: Materials Science Forum, Vols. 600-603. - : Trans Tech Publ.. ; , s. 991-994
-
Konferensbidrag (refereegranskat)abstract
- An innovative process has been developed by Linköping University to prepare the 4HSiC substrate surface before epitaxial growth. The processed PiN diodes have been characterized in forward and reverse mode at different temperature. The larger diodes (2.56 mm2) have a very low leakage current around 20 nA @ 500V for temperatures up to 300°C. A performant yield (68%) was obtained on these larger diodes have a breakdown voltage superior to 500V. Electroluminescence characteristics have been done on these devices and they show that there is no generation of Stacking Faults during the bipolar conduction.
|
|
| 9. |
|
|
| 10. |
- Buyanova, Irina, 1960-, et al.
(författare)
-
Mechanism for low-temperature photoluminescence in GaNAs/GaAs structures grown by molecular-beam epitaxy
- 1999
-
Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 75:4, s. 501-
-
Tidskriftsartikel (refereegranskat)abstract
- The mechanism for low-temperature photoluminescence (PL) emissions in GaNAs epilayers and GaAs/GaNxAs1 - x quantum well (QW) structures grown by molecular-beam epitaxy is studied in detail, employing PL, PL excitation, and time-resolved PL spectroscopies. It is shown that even though quantum confinement causes a strong blueshift of the GaNAs PL emission, its major characteristic properties are identical in both QW structures and epilayers. Based on the analysis of the PL line shape, its dependence on the excitation power and measurement temperature, as well as transient data, the PL emission is concluded to be caused by a recombination of excitons trapped by potential fluctuations in GaNAs.
|
|
