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| 2. |
- Ihse, Ingemar, et al.
(författare)
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Riktlinjer för handläggning av patienter med pankreascancer [Guidelines for management of patients with pancreatic cancer]
- 2002
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Ingår i: Läkartidningen. - 0023-7205 .- 1652-7518. ; 99:15, s. 1676-1685
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Tidskriftsartikel (övrigt vetenskapligt/konstnärligt)abstract
- Transabdominellt ultraljud är förstahandsundersökning vid misstänkt pankreascancer, följt av spiral-DT eller MR för mer definitiv diagnos. Tumörmarkörer har ingen plats i rutindiagnostiken. Spiral-DT är basen i resektabilitetsbedömningen. Resektion av tumören är en förutsättning för bot. Ett samband har påvisats mellan antalet resektioner som görs vid ett sjukhus årligen och postoperativ mortalitet. Långtidsöverlevnaden efter resektion är oförändrat kort medan postoperativ mortalitet minskat dramatiskt vid enheter som rapporterat sina resultat. Adjuvant behandling efter resektion bör endast ges inom ramen för kliniska studier. Det palliativa omhändertagandet har förbättrats främst genom utveckling inom endoskopi, interventionell radiologi, smärt- och nutritionsbehandling. Palliativ cytostatikabehandling bör endast ges selektivt utanför kliniska studier. Radioterapi har ingen dokumenterad effekt på överlevnaden vid icke-resektabel pankreascancer. Internationellt rekommenderas speciella behandlingsteam för pankreascancer med tillräckliga upptagningsområden (2–4 miljoner invånare).
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| 3. |
- Bi, Zhaoxia, et al.
(författare)
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InN quantum dots on GaN nanowires grown by MOVPE
- 2014
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Ingår i: physica status solidi (c). - : Wiley. - 1862-6351 .- 1610-1642 .- 1610-1634. ; 11, s. 421-424
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Tidskriftsartikel (refereegranskat)abstract
- In this work, growth of InN quantum dots (QDs) on GaN nanowires (NWs) by metal-organic vapour phase epitaxy is demonstrated, illustrating the feasibility to combine 0D and 1D structures for nitride semiconductors. Selective area growth was used to generate arrays of c-oriented GaN NWs using Si3N4 as the mask material. In general, InN QDs tend to form at the NW edges between the m-plane side facets, but the QD growth can also be tuned to the side facets by controlling the growth temperature and the growth rate. TEM characterization reveals that I1-type stacking faults are formed in the QDs and originate from the misfit dislocations at the InN/GaN interface. Photoluminescence measurement at 4 K shows that the peak shifts to high energy with reduced dot size. (C) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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| 4. |
- Borgström, Max, et al.
(författare)
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Retinal thinning and brain atrophy in early MS and CIS
- 2020
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Ingår i: Acta Neurologica Scandinavica. - : Wiley-Blackwell Publishing Inc.. - 0001-6314 .- 1600-0404. ; 142:5, s. 418-427
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Tidskriftsartikel (refereegranskat)abstract
- Background Optical coherence tomography (OCT) could be complementary to magnetic resonance imaging (MRI) of the brain in monitoring course of multiple sclerosis (MS) and clinically isolated syndrome (CIS). Thinning of neurons in ganglion cell-inner plexiform layer (GCIPL) measured by OCT is assumed to be associated with brain atrophy. Objectives To evaluate association of GCIPL with brain parameters detected by quantitative MRI (qMRI) and MR-spectroscopy (MRS) in early MS and CIS. Methods Seventeen newly diagnosed MS and 18 CIS patients were prospectively included. The patients were assessed at baseline as well as at 1 year follow-up by OCT, qMRI and MRS. Brain parenchymal and myelin volumes (BPV, MYV respectively) and the corresponding fractions (BPF, MYF) were measured with qMRI. Metabolites including myo-inositol (myo-Ins) were measured in the normal-appearing white matter (NAWM) using MRS. T-tests and ANOVA were used to analyze group differences, and linear regression models to evaluate association of GCIPL with BPV, MYV and myo-Ins after correlation analysis. Results Disease activity reflected by lesions on MRI and presence of CSF oligoclonal IgG bands were more prominent in MS compared to CIS. GCIPL, BPV, MYV, BPF and MYF were reduced, while concentration of myo-Ins was increased in MS compared to CIS. Follow-up showed consistency of thinner GCIPL in MS compared to CIS. GCIPL thinning correlated with reduced BPV and MYV (P < .05 for both), but with increased myo-Ins (P < .01). Conclusions Significant GCIPL thinning occurs in early MS and is associated with enhanced brain inflammation and atrophy.
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| 5. |
- Karimi, Mohammad, 1988-, et al.
(författare)
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Room-temperature InP/InAsP Quantum Discs-in-Nanowire Infrared Photodetectors
- 2017
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Ingår i: Nano letters (Print). - Washington, DC : American Chemical Society (ACS). - 1530-6984 .- 1530-6992. ; 17:6, s. 3356-3362
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Tidskriftsartikel (refereegranskat)abstract
- The possibility to engineer nanowire heterostructures with large bandgap variations is particularly interesting for technologically important broadband photodetector applications. Here we report on a combined study of design, fabrication, and optoelectronic properties of infrared photodetectors comprising four million n+–i–n+ InP nanowires periodically ordered in arrays. The nanowires were grown by metal–organic vapor phase epitaxy on InP substrates, with either a single or 20 InAsP quantum discs embedded in the i-segment. By Zn compensation of the residual n-dopants in the i-segment, the room-temperature dark current is strongly suppressed to a level of pA/NW at 1 V bias. The low dark current is manifested in the spectrally resolved photocurrent measurements, which reveal strong photocurrent contributions from the InAsP quantum discs at room temperature with a threshold wavelength of about 2.0 μm and a bias-tunable responsivity reaching 7 A/W@1.38 μm at 2 V bias. Two different processing schemes were implemented to study the effects of radial self-gating in the nanowires induced by the nanowire/SiOx/ITO wrap-gate geometry. Summarized, our results show that properly designed axial InP/InAsP nanowire heterostructures are promising candidates for broadband photodetectors. © 2017 American Chemical Society.
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| 6. |
- Lindgren, David, et al.
(författare)
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A luminescence study of doping effects in InP-based radial nanowire structures
- 2013
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Ingår i: Journal of Physics, Conference Series. - : Institute of Physics Publishing (IOPP). - 1742-6588 .- 1742-6596. ; 471:1
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Tidskriftsartikel (refereegranskat)abstract
- We have used micro-photo- and cathodo-luminescence at low temperatures to study the effects of sulphur doping in InP and radial InP/InAs/InP structured nanowires. Samples with pure wurtzite crystal structure, with modulated wurtzite/zincblende crystal structure and with different radial InAs growth times were investigated. We observed a doping concentration gradient along the nanowires, the location of segments of different crystal structure and thickness fluctuations on the monolayer scale of the InAs layer.
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