| 1. |
- Magnusson, Martin, et al.
(författare)
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Semiconductor nanostructures enabled by aerosol technology
- 2014
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Ingår i: Frontiers of Physics. - : Springer Science and Business Media LLC. - 2095-0462 .- 2095-0470. ; 9:3, s. 398-418
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Forskningsöversikt (refereegranskat)abstract
- Aerosol technology provides efficient methods for producing nanoparticles with well-controlled composition and size distribution. This review provides an overview of methods and results obtained by using aerosol technology for producing nanostructures for a variety of applications in semiconductor physics and device technology. Examples are given from: production of metal and metal alloy particles; semiconductor nanoparticles; semiconductor nanowires, grown both in the aerosol phase and on substrates; physics studies based on individual aerosol-generated devices; and large area devices based on aerosol particles.
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| 2. |
- Wacaser, Brent, et al.
(författare)
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Preferential Interface Nucleation: An Expansion of the VLS Growth Mechanism for Nanowires
- 2009
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Ingår i: Advanced Materials. - : Wiley. - 1521-4095 .- 0935-9648. ; 21:2, s. 153-165
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Forskningsöversikt (refereegranskat)abstract
- A review and expansion of the fundamental processes of the vapor-liquid-solid (VLS) growth mechanism for nanowires is presented. Although the focus is on nanowires, most of the concepts may be applicable to whiskers, nanotubes, and other unidirectional growth. Important concepts in the VLS mechanism such as preferred deposition, supersaturation, and nucleation are examined. Nanowire growth is feasible using a wide range of apparatuses, material systems, and growth conditions. For nanowire growth the unidirectional growth rate must be much higher than growth rates of other surfaces and interfaces. It is concluded that a general, system independent mechanism should describe why nanowires grow faster than the surrounding surfaces. This mechanism is based on preferential nucleation at the interface between a mediating material called the collector and a crystalline solid. The growth conditions used mean the probability of nucleation is low on most of the surfaces and interfaces. Nucleation at the collector-crystal interface is however different and of special significance is the edge of the collector-crystal interface where all three phases meet. Differences in nucleation due to different crystallographic interfaces can occur even in two phase systems. We briefly describe how these differences in nucleation may account for nanowire growth without a collector. Identifying the mechanism of nanowire growth by naming the three phases involved began with the naming of the VLS mechanism. Unfortunately this trend does not emphasize the important concepts of the mechanism and is only relevant to one three phase system. We therefore suggest the generally applicable term preferential interface nucleation as a replacement for these different names focusing on a unifying mechanism in nanowire growth.
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| 3. |
- Wallentin, Jesper, et al.
(författare)
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Doping of semiconductor nanowires
- 2011
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Ingår i: Journal of Materials Research. - : Springer Science and Business Media LLC. - 0884-2914 .- 2044-5326. ; 26:17, s. 2142-2156
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Forskningsöversikt (refereegranskat)abstract
- A cornerstone in the successful application of semiconductor nanowire devices is controlled impurity doping. In this review article, we discuss the key results in the field of semiconductor nanowire doping. Considerable development has recently taken place in this field, and half of the references in this review are less than 3 years old. We present a simple model for dopant incorporation during in situ doping of particle-assisted growth of nanowires. The effects of doping on nanowire growth are thoroughly discussed since many investigators have seen much stronger and more complex effects than those observed in thin-film growth. We also give an overview of methods of characterizing doping in nanowires since these in many ways define the boundaries of our current understanding.
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