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Träfflista för sökning "WFRF:(Borgström Magnus) ;pers:(Borgström Magnus T.)"

Sökning: WFRF:(Borgström Magnus) > Borgström Magnus T.

  • Resultat 1-10 av 55
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1.
  • Berg, Alexander, et al. (författare)
  • Growth of wurtzite AlxGa1-xP nanowire shells and characterization by Raman spectroscopy
  • 2017
  • Ingår i: Nanotechnology. - : IOP Publishing. - 0957-4484 .- 1361-6528. ; 28:3
  • Tidskriftsartikel (refereegranskat)abstract
    • The phonon energies of AlGaP in wurtzite crystal structure are generally not known, as opposed to their zincblende counterparts, because AlGaP crystallizes in zincblende phase in bulk and thin films structures. However, in nanowires AlGaP can be grown in wurtzite crystal structure. In this work we have grown wurtzite GaP/AlGaP/GaP core-shell nanowires by use of MOVPE. After developing suitable growth conditions, the Al composition was determined by STEM-EDX measurements and the wurtzite AlGaP phonon energies by Raman spectroscopy. Raman measurements show a peak shift with increasing Al composition in the AlGaP shell. We find that the phonon energies for wurtzite AlGaP are slightly lower than for zincblende AlGaP. Our results can be used to determine the Al composition in wurtzite AlGaP by Raman scattering.
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2.
  • Dagyte, Vilgaile, et al. (författare)
  • Time-resolved photoluminescence characterization of GaAs nanowire arrays on native substrate
  • 2017
  • Ingår i: Nanotechnology. - : IOP Publishing. - 0957-4484 .- 1361-6528. ; 28:50
  • Tidskriftsartikel (refereegranskat)abstract
    • Time-resolved photoluminescence (TRPL) measurements of nanowires (NWs) are often carried out on broken-off NWs in order to avoid the ensemble effects as well as substrate contribution. However, the development of NW-array solar cells could benefit from non-destructive optical characterization to allow faster feedback and further device processing. With this work, we show that different NW array and substrate spectral behaviors with delay time and excitation power can be used to determine which part of the sample dominates the detected spectrum. Here, we evaluate TRPL characterization of dense periodic as-grown GaAs NW arrays on a p-type GaAs substrate, including a sample with uncapped GaAs NWs and several samples passivated with AlGaAs radial shell of varied composition and thickness. We observe a strong spectral overlap of substrate and NW signals and find that the NWs can absorb part of the substrate luminescence signal, thus resulting in a modified substrate signal. The level of absorption depends on the NW-array geometry, making a deconvolution of the NW signal very difficult. By studying TRPL of substrate-only and as-grown NWs at 770 and 400 nm excitation wavelengths, we find a difference in spectral behavior with delay time and excitation power that can be used to assess whether the signal is dominated by the NWs. We find that the NW signal dominates with 400 nm excitation wavelength, where we observe two different types of excitation power dependence for the NWs capped with high and low Al composition shells. Finally, from the excitation power dependence of the peak TRPL signal, we extract an estimate of background carrier concentration in the NWs.
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3.
  • Hammarberg, Susanna, et al. (författare)
  • High resolution strain mapping of a single axially heterostructured nanowire using scanning X-ray diffraction
  • 2020
  • Ingår i: Nano Research. - : Springer Science and Business Media LLC. - 1998-0124 .- 1998-0000. ; 13:9, s. 2460-2468
  • Tidskriftsartikel (refereegranskat)abstract
    • Axially heterostructured nanowires are a promising platform for next generation electronic and optoelectronic devices. Reports based on theoretical modeling have predicted more complex strain distributions and increased critical layer thicknesses than in thin films, due to lateral strain relaxation at the surface, but the understanding of the growth and strain distributions in these complex structures is hampered by the lack of high-resolution characterization techniques. Here, we demonstrate strain mapping of an axially segmented GaInP-InP 190 nm diameter nanowire heterostructure using scanning X-ray diffraction. We systematically investigate the strain distribution and lattice tilt in three different segment lengths from 45 to 170 nm, obtaining strain maps with about 10−4 relative strain sensitivity. The experiments were performed using the 90 nm diameter nanofocus at the NanoMAX beamline, taking advantage of the high coherent flux from the first diffraction limited storage ring MAX IV. The experimental results are in good agreement with a full simulation of the experiment based on a three-dimensional (3D) finite element model. The largest segments show a complex profile, where the lateral strain relaxation at the surface leads to a dome-shaped strain distribution from the mismatched interfaces, and a change from tensile to compressive strain within a single segment. The lattice tilt maps show a cross-shaped profile with excellent qualitative and quantitative agreement with the simulations. In contrast, the shortest measured InP segment is almost fully adapted to the surrounding GaInP segments. [Figure not available: see fulltext.].
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5.
  • Jain, Vishal, et al. (författare)
  • Bias-dependent spectral tuning in InP nanowire-based photodetectors
  • 2017
  • Ingår i: Nanotechnology. - Bristol : IOP Publishing. - 0957-4484 .- 1361-6528. ; 28:11
  • Tidskriftsartikel (refereegranskat)abstract
    • Nanowire array ensembles contacted in a vertical geometry are extensively studied and considered strong candidates for next generations of industrial scale optoelectronics. Key challenges in this development deal with optimization of the doping profile of the nanowires and the interface between nanowires and transparent top contact. Here we report on photodetection characteristics associated with doping profile variations in InP nanowire array photodetectors. Bias-dependent tuning of the spectral shape of the responsivity is observed which is attributed to a Schottky-like contact at the nanowire-ITO interface. Angular dependent responsivity measurements, compared with simulated absorption spectra, support this conclusion. Furthermore, electrical simulations unravel the role of possible self-gating effects in the nanowires induced by the ITO/SiO x wrap-gate geometry. Finally, we discuss possible reasons for the observed low saturation current at large forward biases.
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6.
  • Jain, Vishal, et al. (författare)
  • InP/InAsP Nanowire-Based Spatially Separate Absorption and Multiplication Avalanche Photodetectors
  • 2017
  • Ingår i: ACS Photonics. - Washington : American Chemical Society (ACS). - 2330-4022. ; 4:11, s. 2693-2698
  • Tidskriftsartikel (refereegranskat)abstract
    • Avalanche photodetectors (APDs) are key components in optical communication systems due to their increased photocurrent gain and short response time as compared to conventional photodetectors. A detector design where the multiplication region is implemented in a large band gap material is desired to avoid detrimental Zener tunneling leakage currents, a concern otherwise in smaller band gap materials required for absorption at 1.3/1.55 μm. Self-assembled III-V semiconductor nanowires offer key advantages such as enhanced absorption due to optical resonance effects, strain-relaxed heterostructures, and compatibility with mainstream silicon technology. Here, we present electrical and optical characteristics of single InP and InP/InAsP nanowire APD structures. Temperature-dependent breakdown characteristics of p+-n-n+ InP nanowire devices were investigated first. A clear trap-induced shift in breakdown voltage was inferred from I-V measurements. An improved contact formation to the p+-InP segment was observed upon annealing, and its effect on breakdown characteristics was investigated. The band gap in the absorption region was subsequently varied from pure InP to InAsP to realize spatially separate absorption and multiplication APDs in heterostructure nanowires. In contrast to the homojunction APDs, no trap-induced shifts were observed for the heterostructure APDs. A gain of 12 was demonstrated for selective optical excitation of the InAsP segment. Additional electron-beam-induced current measurements were carried out to investigate the effect of local excitation along the nanowire on the I-V characteristics. Simulated band profiles and electric field distributions support our interpretation of the experiments. Our results provide important insight for optimization of avalanche photodetector devices based on III-V nanowires.
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7.
  • Jain, Vishal, 1989-, et al. (författare)
  • Large Area Photodetectors at 1.3/1.55 μm Based on InP/InAsP NWs
  • 2014
  • Konferensbidrag (refereegranskat)abstract
    • Optical communication systems benefit a lot from APDs due to their increased photocurrent gain as compared to conventional photodetectors. An avalanche region in a high bandgap material is especially useful to avoid the tunneling leakage currents in smaller bandgap materials needed for absorption at 1.3/1.55 µm wavelengths. Self-assembled III-V semiconductor nanowires have a key advantage owing to the enhanced absorption due to optical resonance effects and the strain relaxation in NWs, thus facilitating monolithic integration of different heterostructures on cheaper substrates. Here, we present electrical and optical results from large ensembles of InP/InAsP NWs, axially grown on p+ InP substrates. The NW base consists of an InP p-n junction acting as the avalanche region followed by an InP/InAsP absorption region, and ending with a top InP n+-segment. The 130nm diameter NW arrays are contacted in a vertical geometry using SiO2 as the insulating layer and ITO as the top contact. The n-doping in the avalanche region is varied to study it’s influence on the avalanche mechanism. Also the bandgap in the absorption region is varied from pure InP to smaller bandgap InAsP by varying the As content. Clear interband signals from different crystal phases of InP/InAsP are observed in photocurrent spectroscopy. Moreover, the photocurrent spectra are consistent with spatially resolved photoluminescence signals. We also report on polarization and angle dependent photocurrent response of the NW array.
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8.
  • Jain, Vishal, 1989-, et al. (författare)
  • Large area photodetectors based on InP NWs with InAs/InAsP QWs
  • 2014
  • Konferensbidrag (refereegranskat)abstract
    • Focal plane arrays have a widespread use in infrared imaging, which often rely on cryogenic cooling to curtail the dark current level necessary for a reasonable signal-to-noise ratio. Quantum well (QW) infrared photodetectors are uniform over large areas, but suffer from a severe drawback related to the selection rules for intersubband absorption. An interesting alternative is self-assembled III-V nanowires offering a key advantage owing to the enhanced absorption by optical resonance effects and strain relaxation.We present electrical and optical results from large ensembles of n+-i-n+ InP NWs, axially grown on InP substrates with InAs/InAsP QWs embedded within the i-segment, designed for both interband and intersubband detection. The NWs are contacted in a vertical geometry using 50 nm SiO2 as the insulating layer and ITO as the top contact. We first investigate the crystal quality of the InAsP QWs grown in 180 nm diameter NWs, using PL, CL and TEM. To achieve more abrupt InAs/InAsP QWs, we grow 130 nm diameter NWs and deplete the In present in the Au catalysts. The effect of n-doping on the device performance is studied by fabricating two different NW geometries, with and without an n+-segment grown before the nominal i-segment in the NW. In addition, the position of the QWs within the i-segment is varied to further scrutinize effects related to doping and crystal structure. Finally, we report spectrally resolved photocurrent results from the QWs in the near-infrared region and discuss about the further developments needed for intersubband detection.
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9.
  • Karimi, Mohammad, 1988-, et al. (författare)
  • Infrared Photodetectors Based on Nanowire Arrays – Towards Far Infrared Region
  • 2017
  • Konferensbidrag (refereegranskat)abstract
    • Nanowire semiconductors are promising candidates for optoelectronic applications such as solar cells, photodetectors and lasers due to their quasi-1D geometry and large surface to volume ratio. The functional wavelength range of NW-based detectors is typically limited to the visible/near-infrared region. In this work, we present electrical and optical properties of novel IR photodetectors based on large square millimeter ensembles (>1million) of vertically processed semiconductor heterostructure nanowires (NWs) grown on InP substrates which operates in longer wavelengths. InP NWs comprising single or multiple (20) InAs/InAsP QDics axially embedded in an n-i-n geometry, have been grown on InP substrates using MOVPE. The NWs are contacted in vertical direction by ALD deposition of 50 nm SiO2 as an insulating layer followed by sputtering of ITO and evaporation of Ti and Au as top contact layer. In order to extend the sensitivity range to the mid-wavelength and long-wavelength regions, the intersubband transition within conduction band of InAsP QDisc is suggested. We present first experimental indications of intersubband photocurrent in NW geometry and discuss important design parameters for realization of intersubband detectors. Key advantages with the proposed design include large degree of freedom in choice of materials compositions, possible enhanced optical resonance effects due to periodically ordered NW arrays and the compatibility with silicon substrates. We believe that our novel detector design offers the route towards monolithic integration of compact and sensitive III-V NW long wavelength detectors with Si technology.
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10.
  • Lindgren, David, et al. (författare)
  • Study of carrier concentration in single InP nanowires by luminescence and Hall measurements
  • 2015
  • Ingår i: Nanotechnology. - : IOP Publishing. - 0957-4484 .- 1361-6528. ; 26:4
  • Tidskriftsartikel (refereegranskat)abstract
    • The free electron carrier concentrations in single InP core-shell nanowires are determined by micro-photoluminescence, cathodoluminescence (CL) and Hall effect measurements. The results from luminescence measurements were obtained by solving the Fermi-Dirac integral, as well as by analyzing the peak full width at half maximum (FWHM). Furthermore, the platform used for Hall effect measurements, combined with spot mode CL spectroscopy, is used to determine the carrier concentrations at specific positions along single nanowires. The results obtained via luminescence measurements provide an accurate and rapid feedback technique for the epitaxial development of doping incorporation in nanowires. The technique has been employed on several series of samples in which growth parameters, such as V/III-ratio, temperature and dopant flows, were investigated in an optimization procedure. The correlation between the Hall effect and luminescence measurements for extracting the carrier concentration of different samples were in excellent agreement.
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  • Resultat 1-10 av 55

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