| 1. |
- Samuelson, Lars, et al.
(författare)
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Semiconductor nanowires for 0D and 1D physics and applications
- 2004
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Ingår i: Physica E: Low-Dimensional Systems and Nanostructures. - : Elsevier BV. - 1386-9477. ; 25:2-3, s. 313-318
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Tidskriftsartikel (refereegranskat)abstract
- During the last 5 years the potential for applications of semiconductor nanowires has grown rapidly via the development of methods for catalytically induced nanowire growth using the, so-called vapor-liquid-solid (VLS) growth mode. The VLS method offers a high degree of control of parameters such as position, diameter, length and composition, including the realization of atomically abrupt heterostructure interfaces inside a nanowire. In this review, we summarize the progress and the standing of our research from the point of view of controlled growth, structural and electronic properties and in terms of different families of devices which have been possible to realize. (C) 2004 Elsevier B.V. All rights reserved.
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| 2. |
- Seifert, Werner, et al.
(författare)
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Growth of one-dimensional nanostructures in MOVPE
- 2004
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Ingår i: Journal of Crystal Growth. - : Elsevier BV. - 0022-0248. ; 272:1-4, s. 211-220
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Tidskriftsartikel (refereegranskat)abstract
- The use of metal organic vapor-phase epitaxy (MOVPE) for growth of one-dimensional nanostructures in the material systems GaAs, GaP, InAs and InP is investigated. Some kinetic effects are discussed, especially the general finding that in MOVPE thinner whiskers grow faster than thicker whiskers. Effects of growth temperature on growth rate and shape of the whiskers, the effects of different growth directions on the perfection of the materials and the possibilities to grow heterostructures in axial and lateral directions are reported. Ways to overcome the randomness in whisker growth by controlled seeding of the Au particles and by using lithography for site control are demonstrated.
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| 3. |
- Borgström, Magnus, et al.
(författare)
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Precursor evaluation for in situ InP nanowire doping
- 2008
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Ingår i: Nanotechnology. - : IOP Publishing. - 0957-4484 .- 1361-6528. ; 19:44
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Tidskriftsartikel (refereegranskat)abstract
- The use of tetraethyltin (TESn) and dimethylzinc (DMZn) as in situ n- and p-dopant precursors during particle-assisted growth of InP nanowires is reported. Gate voltage dependent transport measurements demonstrate that the nanowires can be predictably synthesized as either n- or p-type. These doped nanowires can be characterized based on their electric field response and we find that n- type doping scales over a range from 10(17) to 10(19) cm(-3) with increasing input TESn dopant molar fraction. On the other hand, the p-type doping using DMZn saturates at low levels, probably related to a strong increase in nanowire growth rate with increasing DMZn molar fractions. By optimizing growth conditions with respect to tapering, axial pn-junctions exhibiting rectifying behavior were fabricated. The pn-junctions can be operated as light emitting diodes.
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| 4. |
- Dey, Anil, et al.
(författare)
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High-Performance InAs Nanowire MOSFETs
- 2012
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Ingår i: IEEE Electron Device Letters. - 0741-3106. ; 33:6, s. 791-793
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Tidskriftsartikel (refereegranskat)abstract
- In this letter, we present a 15-nm-diameter InAs nanowire MOSFET with excellent on and off characteristics. An n-i-n doping profile was used to reduce the source and drain resistances, and an Al2O3/HfO2 bilayer was introduced in the high-k process. The nanowires exhibit high drive currents, up to 1.25 A/mm, normalized to the nanowire circumference, and current densities up to 34 MA/cm2 (VD = 0.5 V). For a nominal LG = 100 nm, we observe an extrinsic transconductance (gm) of 1.23 S/mm and a subthreshold swing of 93 mV/decade at VD = 10 mV.
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| 5. |
- Magnusson, Martin, et al.
(författare)
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Semiconductor nanostructures enabled by aerosol technology
- 2014
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Ingår i: Frontiers of Physics. - : Springer Science and Business Media LLC. - 2095-0462 .- 2095-0470. ; 9:3, s. 398-418
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Forskningsöversikt (refereegranskat)abstract
- Aerosol technology provides efficient methods for producing nanoparticles with well-controlled composition and size distribution. This review provides an overview of methods and results obtained by using aerosol technology for producing nanostructures for a variety of applications in semiconductor physics and device technology. Examples are given from: production of metal and metal alloy particles; semiconductor nanoparticles; semiconductor nanowires, grown both in the aerosol phase and on substrates; physics studies based on individual aerosol-generated devices; and large area devices based on aerosol particles.
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| 6. |
- Mårtensson, Thomas, et al.
(författare)
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Nanowire arrays - a toolbox for the future
- 2004
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Ingår i: Book of extended abstracts: 8th Intl Conf Nanoscale Sci Technol, Venice, Italy (2004).
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Konferensbidrag (refereegranskat)
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| 7. |
- Thelander, Claes, et al.
(författare)
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The electrical and structural properties of n-type InAs nanowires grown from metal-organic precursors.
- 2010
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Ingår i: Nanotechnology. - : IOP Publishing. - 0957-4484 .- 1361-6528. ; 21:20
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Tidskriftsartikel (refereegranskat)abstract
- The electrical and structural properties of 111B-oriented InAs nanowires grown using metal-organic precursors have been studied. On the basis of electrical measurements it was found that the trends in carbon incorporation are similar to those observed in the layer growth, where an increased As/In precursor ratio and growth temperature result in a decrease in carbon-related impurities. Our results also show that the effect of non-intentional carbon doping is weaker in InAs nanowires compared to bulk, which may be explained by lower carbon incorporation in the nanowire core. We determine that differences in crystal quality, here quantified as the stacking fault density, are not the primary cause for variations in resistivity of the material studied. The effects of some n-dopant precursors (S, Se, Si, Sn) on InAs nanowire morphology, crystal structure and resistivity were also investigated. All precursors result in n-doped nanowires, but high precursor flows of Si and Sn also lead to enhanced radial overgrowth. Use of the Se precursor increases the stacking fault density in wurtzite nanowires, ultimately at high flows leading to a zinc blende crystal structure with strong overgrowth and very low resistivity.
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| 8. |
- Wacaser, Brent, et al.
(författare)
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Preferential Interface Nucleation: An Expansion of the VLS Growth Mechanism for Nanowires
- 2009
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Ingår i: Advanced Materials. - : Wiley. - 1521-4095 .- 0935-9648. ; 21:2, s. 153-165
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Forskningsöversikt (refereegranskat)abstract
- A review and expansion of the fundamental processes of the vapor-liquid-solid (VLS) growth mechanism for nanowires is presented. Although the focus is on nanowires, most of the concepts may be applicable to whiskers, nanotubes, and other unidirectional growth. Important concepts in the VLS mechanism such as preferred deposition, supersaturation, and nucleation are examined. Nanowire growth is feasible using a wide range of apparatuses, material systems, and growth conditions. For nanowire growth the unidirectional growth rate must be much higher than growth rates of other surfaces and interfaces. It is concluded that a general, system independent mechanism should describe why nanowires grow faster than the surrounding surfaces. This mechanism is based on preferential nucleation at the interface between a mediating material called the collector and a crystalline solid. The growth conditions used mean the probability of nucleation is low on most of the surfaces and interfaces. Nucleation at the collector-crystal interface is however different and of special significance is the edge of the collector-crystal interface where all three phases meet. Differences in nucleation due to different crystallographic interfaces can occur even in two phase systems. We briefly describe how these differences in nucleation may account for nanowire growth without a collector. Identifying the mechanism of nanowire growth by naming the three phases involved began with the naming of the VLS mechanism. Unfortunately this trend does not emphasize the important concepts of the mechanism and is only relevant to one three phase system. We therefore suggest the generally applicable term preferential interface nucleation as a replacement for these different names focusing on a unifying mechanism in nanowire growth.
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