SwePub
Sök i SwePub databas

  Utökad sökning

Träfflista för sökning "WFRF:(Borgström Magnus) ;pers:(Wallentin Jesper)"

Sökning: WFRF:(Borgström Magnus) > Wallentin Jesper

  • Resultat 1-10 av 58
Sortera/gruppera träfflistan
   
NumreringReferensOmslagsbildHitta
1.
  • Borgström, Magnus, et al. (författare)
  • Nanowires With Promise for Photovoltaics
  • 2011
  • Ingår i: IEEE Journal of Selected Topics in Quantum Electronics. - 1077-260X. ; 17:4, s. 1050-1061
  • Tidskriftsartikel (refereegranskat)abstract
    • Solar energy harvesting for electricity production is regarded as a fully credible future energy source: plentiful and without serious environmental concerns. The breakthrough for solar energy technology implementation has, however, been hampered by two issues: the conversion efficiency of light into electricity and the solar panel production cost. The use of III-V nanowires (NWs) in photovoltaics allows to respond to both these demands. They offer efficient light absorption and significant cost reduction. These low-dimensional structures can be grown epitaxially in dense NW arrays directly on silicon wafers, which are abundant and cheaper than the germanium substrates used for triple-junction solar cells today. For planar structures, lattice matching poses a strong restriction on growth. III-V NWs offer to create highly efficient multijunction devices, since multiple materials can be combined to match the solar spectrum without the need of tightly controlled lattice matching. At the same time, less material is required for NW-based solar cells than for planar-based architecture. This approach has potential to reach more than 50% in efficiency. Here, we describe our work on NW tandem solar cells, aiming toward two junctions absorbing different parts of the solar spectrum, connected in series via a tunnel diode.
  •  
2.
  • Hammarberg, Susanna, et al. (författare)
  • High resolution strain mapping of a single axially heterostructured nanowire using scanning X-ray diffraction
  • 2020
  • Ingår i: Nano Research. - : Springer Science and Business Media LLC. - 1998-0124 .- 1998-0000. ; 13:9, s. 2460-2468
  • Tidskriftsartikel (refereegranskat)abstract
    • Axially heterostructured nanowires are a promising platform for next generation electronic and optoelectronic devices. Reports based on theoretical modeling have predicted more complex strain distributions and increased critical layer thicknesses than in thin films, due to lateral strain relaxation at the surface, but the understanding of the growth and strain distributions in these complex structures is hampered by the lack of high-resolution characterization techniques. Here, we demonstrate strain mapping of an axially segmented GaInP-InP 190 nm diameter nanowire heterostructure using scanning X-ray diffraction. We systematically investigate the strain distribution and lattice tilt in three different segment lengths from 45 to 170 nm, obtaining strain maps with about 10−4 relative strain sensitivity. The experiments were performed using the 90 nm diameter nanofocus at the NanoMAX beamline, taking advantage of the high coherent flux from the first diffraction limited storage ring MAX IV. The experimental results are in good agreement with a full simulation of the experiment based on a three-dimensional (3D) finite element model. The largest segments show a complex profile, where the lateral strain relaxation at the surface leads to a dome-shaped strain distribution from the mismatched interfaces, and a change from tensile to compressive strain within a single segment. The lattice tilt maps show a cross-shaped profile with excellent qualitative and quantitative agreement with the simulations. In contrast, the shortest measured InP segment is almost fully adapted to the surrounding GaInP segments. [Figure not available: see fulltext.].
  •  
3.
  • Jain, Vishal, 1989-, et al. (författare)
  • Large area photodetectors based on InP NWs with InAs/InAsP QWs
  • 2014
  • Konferensbidrag (refereegranskat)abstract
    • Focal plane arrays have a widespread use in infrared imaging, which often rely on cryogenic cooling to curtail the dark current level necessary for a reasonable signal-to-noise ratio. Quantum well (QW) infrared photodetectors are uniform over large areas, but suffer from a severe drawback related to the selection rules for intersubband absorption. An interesting alternative is self-assembled III-V nanowires offering a key advantage owing to the enhanced absorption by optical resonance effects and strain relaxation.We present electrical and optical results from large ensembles of n+-i-n+ InP NWs, axially grown on InP substrates with InAs/InAsP QWs embedded within the i-segment, designed for both interband and intersubband detection. The NWs are contacted in a vertical geometry using 50 nm SiO2 as the insulating layer and ITO as the top contact. We first investigate the crystal quality of the InAsP QWs grown in 180 nm diameter NWs, using PL, CL and TEM. To achieve more abrupt InAs/InAsP QWs, we grow 130 nm diameter NWs and deplete the In present in the Au catalysts. The effect of n-doping on the device performance is studied by fabricating two different NW geometries, with and without an n+-segment grown before the nominal i-segment in the NW. In addition, the position of the QWs within the i-segment is varied to further scrutinize effects related to doping and crystal structure. Finally, we report spectrally resolved photocurrent results from the QWs in the near-infrared region and discuss about the further developments needed for intersubband detection.
  •  
4.
  • Mante, Pierre Adrien, et al. (författare)
  • Confinement effects on Brillouin scattering in semiconductor nanowire photonic crystal
  • 2016
  • Ingår i: Physical Review B. - 1098-0121. ; 94:2
  • Tidskriftsartikel (refereegranskat)abstract
    • Scattering of photons by phonons, or Brillouin scattering, enables manipulation and control of light and has led to revolutionary applications, from slow light to saser and cooling of micromechanical resonators. Recently, enhanced light and sound interaction has been demonstrated in waveguides. However, the design of the waveguide geometry tunes and alters the phonon and photon dispersion simultaneously. Here we investigate, through femtosecond pump-probe spectroscopy and theoretical modeling, the light and sound interaction in a bottom-up fabricated vertical nanowire photonic crystal. In such a system, the phonon dispersion can be tuned by varying the geometry of the constituent nanowires. In contrast, the placement of the nanowires in the photonic crystal can be used for tuning optical array modes, without altering the phonon dispersion. We demonstrate the forward and backward scattering, by acoustic phonons in the nanowires, of (1) such optical array modes and (2) guided modes of the constituent nanowires. Furthermore, our results reveal an enhanced interaction of array modes with phonons that we attribute to the specific scattering mechanism. Our results enable the design of a photonic crystal with separately tailored photon and phonon dispersion for Brillouin scattering. We anticipate these advances to be a starting point for enhanced control of light at the nanoscale.
  •  
5.
  • Otnes, Gaute, et al. (författare)
  • Strategies to obtain pattern fidelity in nanowire growth from large-area surfaces patterned using nanoimprint lithography
  • 2016
  • Ingår i: Nano Research. - : Springer Science and Business Media LLC. - 1998-0124 .- 1998-0000. ; 9:10, s. 2852-2861
  • Tidskriftsartikel (refereegranskat)abstract
    • Position controlled nanowire growth is important for nanowire-based optoelectronic components which rely on light emission or light absorption. For solar energy harvesting applications, dense arrays of nanowires are needed; however, a major obstacle to obtaining dense nanowire arrays is seed particle displacement and coalescing during the annealing stage prior to nanowire growth. Here, we explore three different strategies to improve pattern preservation of large-area catalyst particle arrays defined by nanoimprint lithography for nanowire growth. First, we see that heat treating the growth substrate prior to nanoimprint lithography improves pattern preservation. Second, we explore the possibility of improving pattern preservation by fixing the seed particles in place prior to annealing by modifying the growth procedure. And third, we show that a SiNx growth mask can fully prevent seed particle displacement. We show how these strategies allow us to greatly improve the pattern fidelity of grown InP nanowire arrays with dimensions suitable for solar cell applications, ultimately achieving 100% pattern preservation over the sampled area. The generic nature of these strategies is supported through the synthesis of GaAs and GaP nanowires. [Figure not available: see fulltext.]
  •  
6.
  • Adolfsson, Karl, et al. (författare)
  • Fluorescent Nanowire Heterostructures as a Versatile Tool for Biology Applications
  • 2013
  • Ingår i: Nano Letters. - : American Chemical Society (ACS). - 1530-6992 .- 1530-6984. ; 13:10, s. 4728-4732
  • Tidskriftsartikel (refereegranskat)abstract
    • Nanowires are increasingly used in biology, as sensors, as injection devices, and us model systems for toxicity studies. Currently, in situ visualization of nanowires in biological media is done using organic dyes, which a;:e prone to photobleaching, or using microscopy methods which either yield poor resolution or require a sophisticated setup. Here we show that inherently fluorescent nanowire axial heterostructnies c:an be used to localize and identify nanowires in cells and tissue; By synthesizing GaP GaInP nanowire heterostructures, with nonfluorescent GaP segments and fluorescent GaInP segments, we created a barcode labeling system enabling the distinction of the nanowire morphological and chemical properties using fluorescence microscopy. The GaInP photoluminescence stability, combined with the fact that the nanowires can be coated with different materials while retaining their fluorescence, make these nanowires promising tools for biological and nanotoxicological studies.
  •  
7.
  • Borgström, Magnus, et al. (författare)
  • Dynamics of extremely anisotropic etching of InP nanowires by HCl
  • 2011
  • Ingår i: Chemical Physics Letters. - : Elsevier BV. - 0009-2614. ; 502:4-6, s. 222-224
  • Tidskriftsartikel (refereegranskat)abstract
    • We report on the dynamics of in situ etching of nanowires using an etching agent which allows for parameter optimization for nanowire synthesis without concerns of tapering issues. Upon etching of InP nanowires using HCl it is found that HCl mainly reacts with the precursor TMI, its decomposition species, and physisorbed In. The reaction with solid InP is less rapid and diffusion limited. We find a gas-phase etch process which is metal assisted and has a high aspect ratio of 1:100. (C) 2011 Elsevier B.V. All rights reserved.
  •  
8.
  • Borgström, Magnus, et al. (författare)
  • Fabrication and characterization of AlP-GaP core-shell nanowires
  • 2011
  • Ingår i: Journal of Crystal Growth. - : Elsevier BV. - 0022-0248. ; 324:1, s. 290-295
  • Tidskriftsartikel (refereegranskat)abstract
    • We report on the particle assisted synthesis of core-shell AlP-GaP nanowires by use of metal-organic vapor phase epitaxy. The core-shell approach is chosen such as to stabilize the AlP which is highly sensitive to water. The nanowires were investigated by scanning electron microscopy, transmission electron microscopy, X-ray diffraction, and Raman spectroscopy. These nanowires have an indirect band-gap and form a type II staggered heterojunction. By designed capping of the AlP cores by GaP, we find the nanowires to be stable for more than a year. (C) 2011 Elsevier B.V. All rights reserved.
  •  
9.
  • Borgström, Magnus, et al. (författare)
  • In Situ Etching for Total Control Over Axial and Radial Nanowire Growth
  • 2010
  • Ingår i: Nano Reseach. - : Springer Science and Business Media LLC. - 1998-0124 .- 1998-0000. ; 3:4, s. 264-270
  • Tidskriftsartikel (refereegranskat)abstract
    • We report a method using in situ etching to decouple the axial from the radial nanowire growth pathway, independent of other growth parameters. Thereby a wide range of growth parameters can be explored to improve the nanowire properties without concern of tapering or excess structural defects formed during radial growth. We demonstrate the method using etching by HCl during InP nanowire growth. The improved crystal quality of etched nanowires is indicated by strongly enhanced photoluminescence as compared to reference nanowires obtained without etching.
  •  
10.
  •  
Skapa referenser, mejla, bekava och länka
  • Resultat 1-10 av 58

Kungliga biblioteket hanterar dina personuppgifter i enlighet med EU:s dataskyddsförordning (2018), GDPR. Läs mer om hur det funkar här.
Så här hanterar KB dina uppgifter vid användning av denna tjänst.

 
pil uppåt Stäng

Kopiera och spara länken för att återkomma till aktuell vy