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| 2. |
- Beck, Marc, et al.
(författare)
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Nanoelectrochemical transducers for (bio-) chemical sensor applications fabricated by nanoimprint lithography
- 2004
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Ingår i: Microelectronic Engineering. - 1873-5568. ; 73-74, s. 837-842
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Tidskriftsartikel (refereegranskat)abstract
- Nanometer-structured transducers for commercial use in pharmaceutical, medical or (bio-) chemical analysis have so far been hardly accessible since they could not be produced by parallel lithography techniques at reasonable costs. We introduce here a method on. how to fabricate nanometer-structured interdigitated array electrodes including interconnections and bond pads in the micrometer range in a single imprint step on 2-in. wafer scale. The method enables the mass production of those devices at lowest cost opening a new field for the commercial use of nanometer-structured sensor systems.
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| 3. |
- Carlberg, Patrick, et al.
(författare)
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Lift-off process for nanoimprint lithography
- 2003
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Ingår i: Microelectronic Engineering. - 0167-9317 .- 1873-5568. ; 67-8, s. 203-207
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Konferensbidrag (refereegranskat)abstract
- We report a novel a lift-off method for nanoimprint lithography. This is a bi-layer method, using a polymethyl methacrylate (PMMA) on lift-off layer (LOL) resist scheme. For the imprint step, direct evidence for good pattern transfer down to 20 nm is shown. Oxygen plasma ashing is required to remove residual PMMA. A liquid solvent, MF 319, is used to transfer the pattern down to the silicon. The LOL is dissolved isotropically while the PMMA is unaffected. Ashing time can kept to a minimum through the wet etch method. This reduces the line widening effect. After metal evaporation a two-step lift-off process prevents metal flakes from adhering to the surface electrostatically. At first warm acetone breakes apart the metal layer and dissolves the PMMA, then warm Remover S-1165 removes the LOL and remaining metal. Structures of lines down to 50 nm and dots with a diameter of sub 20 nm are presented.
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| 4. |
- Carlberg, Patrick, et al.
(författare)
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Nanoimprint in mr-L 6000.1 XP/PMMA resist system
- 2002
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Ingår i: 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science.
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Konferensbidrag (refereegranskat)abstract
- Use of the new resist system mr-L 6000.1 XP in combination with PMMA is demonstrated to give sub-100 nm resolution in nanoimprint lithography. Low glass transition temperature in combination with high plasma stability makes this resist suitable for achieving desirable resist profiles after the imprint process. Imprint conditions for mr-L 6000.1 XP/PMMA resist system as well as imprint results are described and discussed
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| 6. |
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| 7. |
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| 8. |
- Luo, Gang, et al.
(författare)
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Nanoimprint lithography for the fabrication of interdigitated cantilever arrays
- 2006
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Ingår i: Nanotechnology. - : IOP Publishing. - 0957-4484 .- 1361-6528. ; 17:8, s. 1906-1910
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Tidskriftsartikel (refereegranskat)abstract
- We report on the realization of a novel interdigitated cantilever array with electrostatic control of the shape of the interdigitated array. It consists of an array of SiO2/metal double-finger cantilevers in a grating configuration together with an electrical connection part. The complete grating structure is fabricated with nanoimprint lithography, UV lithography and reactive ion etching. The patterns of the cantilever arrays are defined by nanoimprint lithography. The electrical contact pads are defined and aligned with the imprinted grating pattern by UV lithography. The two steps of reactive ion etching are optimized to get vertical sidewalls of the SiO2 cantilevers and finally to release them from the Si substrate. By applying a bias, the shape of the cantilever array can be altered due to the electrostatic force. The dimensions of the cantilevers and the spacing between them are optimized to achieve the desired functional operating characteristics of the structures. Since the fabrication scheme is based on nanoimprint lithography, such electrostatically controlled periodic structures may be relatively easily and non-expensively realized in various configurations, allowing them to function as optical switching elements, electrical filters, mass sensors, etc.
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| 9. |
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| 10. |
- Maximov, Ivan, et al.
(författare)
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Nanoimprint technology for fabrication of three-terminal ballistic junction devices in GaInAs/InP
- 2003
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Ingår i: Microelectronic Engineering. - 1873-5568. ; 67-8, s. 196-202
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Tidskriftsartikel (refereegranskat)abstract
- We present processing technology based on nanoimprint lithography (NIL) and wet etching for fabrication of GaInAs/InP three-terminal ballistic junction (TBJ) devices. To transfer sub-100 nm features into a high-mobility InP-based 2DEG material, we used SiO2/Si stamps made with electron beam lithography and reactive ion etching. After the NIL, the resist residues are removed in oxygen plasma followed by wet etching of GaInAs/InP to define the M-structures. Fabricated TBJ-devices are characterized using scanning electron microscopy and electron transport measurements. Highly non-linear electrical characteristics of the TBJ structures are demonstrated and compared with E-beam defined devices. (C) 2003 Elsevier Science B.V. All rights reserved.
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