| 1. |
- Chen, S., et al.
(författare)
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Coffin-Mansson equation of Sn-4.0Ag-0.5Cu solder joint
- 2009
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Ingår i: Soldering and Surface Mount Technology. - : Emerald. - 1758-6836 .- 0954-0911. ; 21:2, s. 48-54
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Tidskriftsartikel (refereegranskat)abstract
- Purpose: The purpose of this paper is to fit Coffin-Manson equation of Sn-4.0Ag-0.5Cu lead free solder joint by using results of solders joint reliability test and finite element analysis. Also to present a novel device for solder joint reliability test. Design/methodology/approach: Two-points bending test of Sn-4.0Ag-0.5Cu lead free solder joint was carried out at three deflection levels by using a special bending tester that can control displacement exactly by a cam system. The failure criterion was defined as resistance of solder joint getting 10 percent increase. The X-section was done for all failure samples to observe crack initiation and propagation in solder joint. Finite element analysis was presented with ANSYS for obtaining shear strain range, analyzing distribution of stress and strain and supporting experimental results. Findings: The experimental results indicate that the fatigue life decreased obviously with the displacement increased. By using optical microscope and SEM photographs, two kinds of failure mode were found in solder joint. The majority failure mode took place at the bottom corner of solder joint under the termination of resistor initially, and propagated into the solder matrix. Another failure mode was delamination. It appeared at the interface between the termination of resistor and its ceramic body. The distribution status of stress and strain in solder joint and the calculation results of shear strain range at different deflection levels were obtained from simulation result. The Coffin-Manson equation of Sn-4.0Ag-0.5Cu lead free solder joint was fitted by combining experimental data with result of finite element analysis. Originality/value: This paper presents Coffin-Manson equation of Sn-4.0Ag-0.5Cu solder joint with two-points bending test. An effective and economical device was designed and applied.
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| 2. |
- Hsu, Li-Han, 1981, et al.
(författare)
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Fabrication process and 110 GHz measurement result of MS-to-CPW RF-via transition for RF-MEMS devices packaging applications
- 2009
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Ingår i: 2009 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2009. - 9781893580138
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Konferensbidrag (refereegranskat)abstract
- This paper presents the fabrication process of RF-via (0-level) and flip-chip bump (1-level) transitions for applications of packaging MS (microstrip) RF-MEMS devices. The interconnect structure with MS-to-CPW transition between GaAs MEMS substrate and Al2O3 motherboard was in-house fabricated. A novel fabrication process for RF-MEMS packaging is in detail. After fabrication, the samples were measured up to 110 GHz using on-wafer probing measurement. From the measured results, the insertion loss of entire interconnect structure is better than -2 dB up to 100 GHz, documenting the feasibility for millimeter-wave RF-MEMS devices packaging applications.
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