| 1. |
- Abata, E., et al.
(författare)
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Study of energy response and resolution of the ATLAS barrel calorimeter to hadrons of energies from 20 to 350 GeV
- 2010
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Ingår i: Nuclear Instruments and Methods in Physics Research Section A. - : Elsevier. - 0168-9002 .- 1872-9576 .- 0167-5087. ; 621:1-3, s. 134-150
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Tidskriftsartikel (refereegranskat)abstract
- A fully instrumented slice of the ATLAS detector was exposed to test beams from the SPS (Super Proton Synchrotron) at CERN in 2004. In this paper, the results of the measurements of the response of the barrel calorimeter to hadrons with energies in the range 20-350 GeV and beam impact points and angles corresponding to pseudo-rapidity values in the range 0.2-0.65 are reported. The results are compared to the predictions of a simulation program using the Geant 4 toolkit. (C) 2010 Published by Elsevier B.V.
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| 2. |
- Du, M., et al.
(författare)
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Improving real-time bidding using a constrained markov decision process
- 2017
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Ingår i: 13th International Conference on Advanced Data Mining and Applications, ADMA 2017. - Cham : Springer. - 9783319691787 ; , s. 711-726
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Konferensbidrag (refereegranskat)abstract
- Online advertising is increasingly switching to real-time bidding on advertisement inventory, in which the ad slots are sold through real-time auctions upon users visiting websites or using mobile apps. To compete with unknown bidders in such a highly stochastic environment, each bidder is required to estimate the value of each impression and to set a competitive bid price. Previous bidding algorithms have done so without considering the constraint of budget limits, which we address in this paper. We model the bidding process as a Constrained Markov Decision Process based reinforcement learning framework. Our model uses the predicted click-through-rate as the state, bid price as the action, and ad clicks as the reward. We propose a bidding function, which outperforms the state-of-the-art bidding functions in terms of the number of clicks when the budget limit is low. We further simulate different bidding functions competing in the same environment and report the performances of the bidding strategies when required to adapt to a dynamic environment.
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| 3. |
- Gottlob, H. D. B., et al.
(författare)
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Gd silicate : A high-k dielectric compatible with high temperature annealing
- 2009
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Ingår i: Journal of Vacuum Science & Technology B. - : American Vacuum Society. - 1071-1023 .- 1520-8567 .- 2166-2754 .- 2166-2746. ; 27:1, s. 249-252
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Tidskriftsartikel (refereegranskat)abstract
- The authors report on the investigation of amorphous Gd-based silicates as high-k dielectrics. Two different stacks of amorphous gadolinium oxide (Gd(2)O(3)) and silicon oxide (SiO(2)) on silicon substrates are compared after annealing at temperatures up to 1000 degrees C. Subsequently formed metal oxide semiconductor capacitors show a significant reduction in the capacitance equivalent thicknesses after annealing. Transmission electron microscopy, medium energy ion scattering, and x-ray diffraction analysis reveal distinct structural changes such as consumption of the SiO(2) layer and formation of amorphous Gd silicate. The controlled formation of Gd silicates in this work indicates a route toward high-k dielectrics compatible with conventional, gate first complementary metal-oxide semiconductor integration schemes.
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| 4. |
- Gottlob, H. D. B., et al.
(författare)
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Scaling potential and MOSFET integration of thermally stable Gd silicate dielectrics
- 2009
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Ingår i: Microelectronic Engineering. - : Elsevier BV. - 0167-9317 .- 1873-5568. ; 86:7-9, s. 1642-1645
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Tidskriftsartikel (refereegranskat)abstract
- We investigate the potential of gadolinium silicate (GdSiO) as a thermally stable high-k gate dielectric in a gate first integration scheme. There silicon diffuses into gadolinium oxide (Gd2O3) from a silicon oxide (SiO2) interlayer specifically prepared for this purpose. We report on the scaling potential based on detailed material analysis. Gate leakage current densities and EOT values are compatible with an ITRS requirement for low stand by power (LSTP). The applicability of this GdSiO process is demonstrated by fully functional silicon on insulator (SOI) metal oxide semiconductor field effect transistors (MOSFETs). (C) 2009 Elsevier B.V. All rights reserved.
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