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- Rigopoulos, N., et al.
(författare)
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Optically detected extended X-ray absorption fine structure study of InGaN/GaN single quantum wells
- 2007
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Ingår i: AIP Conference Proceedings. - : AIP. - 0094-243X. - 9780735403970 ; 893, s. 1503-1504
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Konferensbidrag (refereegranskat)abstract
- We have investigated the local atomic environment of the Ga atoms in an InxGa1-xN single quantum well structure using Optically Detected Extended X-ray Absorption Fine Structure (OD-EXAFS). A comparison of the OD-EXAFS data with a theoretical model shows the technique to be site selective for this particular structure and reveals that the quantum well emission originates from regions with x=0.15.
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