| 1. |
- Björk, Mikael, et al.
(author)
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Nanowire resonant tunneling diodes
- 2002
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In: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 81:23, s. 4458-4460
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Journal article (peer-reviewed)abstract
- Semiconductor heterostructures and their implementation into electronic and photonic devices have had tremendous impact on science and technology. In the development of quantum nanoelectronics, one-dimensional (1D) heterostructure devices are receiving a lot of interest. We report here functional 1D resonant tunneling diodes obtained via bottom-up assembly of designed segments of different semiconductor materials in III/V nanowires. The emitter, collector, and the central quantum dot are made from InAs and the barrier material from InP. Ideal resonant tunneling behavior, with peak-to-valley ratios of up to 50:1 and current densities of 1 nA/mum(2) was observed at low temperatures. (C) 2002 American Institute of Physics.
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| 2. |
- Björk, Mikael, et al.
(author)
-
One-dimensional heterostructures in semiconductor nanowhiskers
- 2002
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In: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 80:6, s. 1058-1060
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Journal article (peer-reviewed)abstract
- We report on the growth of designed heterostructures placed within semiconductor nanowhiskers, exemplified by the InAs/InP material system. Based on transmission electron microscopy, we deduce the interfaces between InAs and InP to be atomically sharp. Electrical measurements of thermionic emission across an 80-nm-wide InP heterobarrier, positioned inside InAs whiskers 40 nm in diameter, yield a barrier height of 0.6 eV. On the basis of these results, we propose new branches of physics phenomena as well as new families of device structures that will now be possible to realize and explore.
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| 3. |
- Björk, Mikael, et al.
(author)
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One-dimensional steeplechase for electrons realized
- 2002
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In: Nano Letters. - : American Chemical Society (ACS). - 1530-6992 .- 1530-6984. ; 2:2, s. 87-89
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Journal article (peer-reviewed)abstract
- We report growth of one-dimensional semiconductor nanocrystals, nanowhiskers, in which segments of the whisker with different composition are formed, illustrated by InAs whiskers containing segments of InP. Our conditions for growth allow the formation of abrupt interfaces and heterostructure barriers of thickness from a few monolayers to 100s of nanometers, thus creating a one-dimensional landscape along which the electrons move. The crystalline perfection, the quality of the interfaces, and the variation in the lattice constant are demonstrated by high-resolution transmission electron microscopy, and the conduction band off-set of 0.6 eV is deduced from the current due to thermal excitation of electrons over an InP barrier.
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| 4. |
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| 5. |
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| 6. |
- Dick Thelander, Kimberly, et al.
(author)
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Self-assembled InAs nanowire networks
- 2005
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In: Book of extended abstracts: MRS Fall Meet, Boston, Ma, USA, 2005.
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Conference paper (other academic/artistic)
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| 7. |
- Ohlsson, Jonas, et al.
(author)
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Growth and characterization of GaAs and InAs nano-whiskers and InAs/GaAs heterostructures
- 2002
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In: Physica E: Low-dimensional Systems and Nanostructures. - 1386-9477. ; 13:2-4, s. 1126-1130
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Conference paper (peer-reviewed)abstract
- Semiconducting InAs and GaAs nano-whiskers have been grown using a chemical beam epitaxy approach in combination with size-selected catalytic Au aerosol particles. The characterization of InAs and GaAs whiskers shows high crystalline quality as seen by transmission electron microscopy. Gate-dependent transport measurements suggests a diffusive electronic transport mechanism. We have also combined these two material systems by growing a very abrupt heterostructure interface within the whiskers, allowing the growth of highly mismatched structures without misfit dislocations. (C) 2002 Elsevier Science B.V. All rights reserved.
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| 8. |
- Persson, Ann, et al.
(author)
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Heterointerfaces in III-V semiconductor nanowhiskers
- 2002
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In: Conference Proceedings - International Conference on Indium Phosphide and Related Materials. - 1092-8669. ; , s. 281-283
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Conference paper (peer-reviewed)abstract
- We have investigated heterostructures formed within Vapor-Liquid-Solid grown III-V nanowhiskers. The growth conditions that are typical for chemical beam epitaxy facilitate the creation of atomically abrupt interfaces. In this paper we investigate the properties of heterostructure interfaces including switching of either the column-V material (As, P) or the column-III material (In, Ga).
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| 9. |
- Samuelson, Lars, et al.
(author)
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Semiconductor nanowires for 0D and 1D physics and applications
- 2004
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In: Physica E: Low-Dimensional Systems and Nanostructures. - : Elsevier BV. - 1386-9477. ; 25:2-3, s. 313-318
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Journal article (peer-reviewed)abstract
- During the last 5 years the potential for applications of semiconductor nanowires has grown rapidly via the development of methods for catalytically induced nanowire growth using the, so-called vapor-liquid-solid (VLS) growth mode. The VLS method offers a high degree of control of parameters such as position, diameter, length and composition, including the realization of atomically abrupt heterostructure interfaces inside a nanowire. In this review, we summarize the progress and the standing of our research from the point of view of controlled growth, structural and electronic properties and in terms of different families of devices which have been possible to realize. (C) 2004 Elsevier B.V. All rights reserved.
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| 10. |
- Samuelson, Lars, et al.
(author)
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Semiconductor nanowires for novel one-dimensional devices
- 2004
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In: Physica E: Low-Dimensional Systems and Nanostructures. - : Elsevier BV. - 1386-9477. ; 21:2-4, s. 560-567
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Journal article (peer-reviewed)abstract
- Low-dimensional semiconductors offer interesting physical phenomena but also the possibility to realize novel types of devices based on, for instance, ID structures. By using traditional top-down fabrication methods the performance of devices is often limited by the quality of the processed device structures. In many cases damage makes ultra-small devices unusable. In this work we present a recently developed method for bottom-up fabrication of epitaxially nucleated semiconductor nanowires based on metallic nanoparticle-induced formation of self-assembled nanowires. Further development of the vapor-liquid-solid growth method have made it possible to control not only the dimension and position of nanowires but also to control heterostructures formed inside the nanowires. Based on these techniques we have realized a series of transport devices such as resonant tunneling and single-electron transistors but also optically active single quantum dots positioned inside nanowires displaying sharp emission characteristics due to excitons. (C) 2003 Elsevier B.V. All rights reserved.
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