| 1. |
- Trifonov, Artem, 1973, et al.
(författare)
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Non-contact scanning probe technique for electric field measurements based on nanowire field-effect transistor
- 2017
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Ingår i: Ultramicroscopy. - : Elsevier BV. - 1879-2723 .- 0304-3991. ; 179:Augusti, s. 33-40
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Tidskriftsartikel (refereegranskat)abstract
- We report on the new active tip for scanning probe microscopy allowing the simultaneous measurements of surface topography and its potential profile. We designed and fabricated a field-effect transistor with nanowire channel located on the apex of silicon-on-insulator small chip. The field-effect transistor with nanowire channel was selected due to its extremely high electric field sensitivity even at room temperature. We developed the scanning probe operated in the tuning fork regime and demonstrated its reasonable spatial and field resolution. The proposed device can be a unique tool for high-sensitive, high-resolution, non-destructive potential profile mapping of nanoscale objects in physics, biology and material science. We discuss the ways to optimize the sensor charge sensitivity to the theoretical limit which is 10? 3 e/Hz?1/2 at room temperature.
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| 2. |
- Afanas'ev, Victor P., et al.
(författare)
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Study of NbN Ultra-thin Films for THz Hot-electron Bolometers
- 2014
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Ingår i: 25th International Sympsoium on Space Terahertz Technology, ISSTT 2014; Moscow; Russian Federation; 27 April 2014 through 30 April 2014. ; , s. 141-143
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Konferensbidrag (refereegranskat)abstract
- Hot-electron bolometer (HEB) mixers based on superconducting ultra-thin NbN films are largely used for THz spectroscopy for space and ground-based observations. Performance of the HEB mixers directly depends on the details of the structure and composition of thin film surface, as well as the nitrogen composition and its depth distribution. In this work, we present the study of the composition and the surface oxidation state of NbN films grown at two different temperatures and of 5 and 10 nm thickness.
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| 3. |
- Krause, Sascha, 1989, et al.
(författare)
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Ambient temperature growth of mono- and polycrystalline NbN nanofilms and their rigorous composition and surface analysis
- 2015
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Ingår i: European Conference on Applied Superconductivity.
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Konferensbidrag (refereegranskat)abstract
- This paper reflects on the rigorous investigation of high-quality 5nm thin NbN films which were deposited by means of reactive DC magnetron sputtering at ambient temperatures. Monocrystalline NbN films have been epitaxially grown onto hexagonal GaN buffer-layers (0002) and showing a distinct, low defect interface as confirmed from HRTEM. The critical temperature (Tc) of those films reached 10.4K. Furthermore, a poly-crystalline structure was observed on films grown onto Si (100) substrates, exhibiting a Tc of 8.1K albeit a narrow transition from the normal to the superconducting state. The deposition at ambient temperatures offers major advantages from a processing point of view and motivates the in-depth characterization and comparison of present films with high quality films grown at elevated temperatures. X-ray photoelectron spectroscopy and reflected electron energy loss spectroscopy verified that the composition of NbN did not differ irrespectively of applied substrate heating. Moreover, the native oxide layer at the surface of NbN has been identified as NbO2 and thus is in contrast to the Nb2O5, usually being formed at the surface of Nb when exposed to air. These findings are of great significance since it was proven the possibility of growing epitaxial NbN onto GaN buffer layer in the absence of high temperatures hence paving the way to employ NbN in more advanced fabrication processes involving a higher degree of complexity. Particularly low-noise THz receiver could benefit from the eased integration of e.g IF circuitry or general multi-layer structures which take advantage of lift-off techniques.
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