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- Hurley, P.K., et al.
(författare)
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Interface Defects in HfO2, LaSiOx, and Gd2O3 High-k/MetalGate Structures on Silicon
- 2008
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Ingår i: J. Electrochem. Soc.. ; 155:2, s. G13-G20
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Tidskriftsartikel (refereegranskat)abstract
- In this work, we present experimental results examining the energy distribution of the relatively high (>1×10^11 cm−2) electrically active interface defects which are commonly observed in high-dielectric-constant (high-k) metal–insulator–silicon systems during high-k process development. This paper extends previous studies on the Si(100)/SiOx/HfO2 system to include a comparative analysis of the density and energy distribution of interface defects for HfO2, lanthanum silicate (LaSiOx), and Gd2O3 thin films on (100) orientation silicon formed by a range of deposition techniques. The analysis of the interface defect density across the energy gap, for samples which experience no H2/N2 annealing following the gate stack formation, reveals a peak density (~2×10^12 cm−2 eV−1 to ~1×10^13 cm−2 eV−1) at 0.83–0.92 eV above the silicon valence bandedge for the HfO2, LaSiOx, and Gd2O3 thin films on Si(100). The characteristic peak in the interface state density (0.83–0.92 eV) is obtained for samples where no interface silicon oxide layer is observed from transmission electron microscopy. Analysis suggests silicon dangling bond (Pbo) centers as the common origin for the dominant interface defects for the various Si(100)/SiOx/high-k/metal gate systems. The results of forming gas (H2/N2) annealing over the temperature range 350–555°C are presented and indicate interface state density reduction, as expected for silicon dangling bond centers. The technological relevance of the results is discussed.
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- Raeissi, Bahman, 1979, et al.
(författare)
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High-k-oxide/silicon interfaces characterized by capacitance frequency spectroscopy
- 2007
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Ingår i: ESSDERC 2007. - 9781424411238 ; , s. 283-286
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Konferensbidrag (refereegranskat)abstract
- Electron capture into insulator/silicon interface states is investigated for high-k dielectrics of Gd(2)O(3) prepared by MBE and ALD, and for HfO(2) prepared by reactive sputtering, by measuring the frequency dependence of MOS capacitance. The capture cross sections are found to be thermally activated and to increase steeply with the energy depth of the interface electron states. The methodology adopted is considered useful for increasing the understanding of high-k-oxide/silicon interfaces.
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- Raeissi, Bahman, 1979, et al.
(författare)
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High-k-oxide/silicon interfaces characterized by capacitance frequency spectroscopy
- 2008
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Ingår i: Solid-State Electronics. - : Elsevier BV. - 0038-1101 .- 1879-2405. ; 52:9, s. 1274-1279
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Tidskriftsartikel (refereegranskat)abstract
- Electron capture into insulator/silicon interface states is investigated for high-k dielectrics of Gd2O3 preparedby molecular beam epitaxy (MBE) and atomic layer deposition (ALD), and for HfO2 prepared byreactive sputtering, by measuring the frequency dependence of Metal Oxide Semiconductor (MOS) capacitance.The capture cross sections are found to be thermally activated and to increase steeply with theenergy depth of the interface electron states. The methodology adopted is considered useful for increasingthe understanding of high-k-oxide/silicon interfaces.
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