| 1. |
- Balestra, F., et al.
(författare)
-
NANOSIL network of excellence-silicon-based nanostructures and nanodevices for long-term nanoelectronics applications
- 2008
-
Ingår i: Materials Science in Semiconductor Processing. - : Elsevier BV. - 1369-8001 .- 1873-4081. ; 11:5-6, s. 148-159
-
Tidskriftsartikel (refereegranskat)abstract
- NANOSIL Network of Excellence [NANOSIL NoE web site < www.nanosil-noe.eu >], funded by the European Commission in the 7th Framework Programme (ICT-FP7, no 216171), aims at European scale integration of the excellent European research laboratories and their capabilities in order to strengthen scientific and technological excellence in the field of nanoelectronic materials and devices for terascale integrated circuits (ICs), and to disseminating the results in a wide scientific and industrial community. NANOSIL is exploring and assessing the science and technological aspects of nanodevices and operational regimes relevant to the n+4 technology node and beyond. It encompasses projects on nanoscale CMOS and beyond-CMOS. Innovative concepts, technologies and device architectures are proposed-with fabrication down to the finest features, and utilising a wide spectrum of advanced deposition and processing capabilities, extensive characterization and very rigorous device modeling. This work is carried out through a network of joint processing, characterization and modeling platforms. This critical interaction strengthens European integration in nanoelectronics and will speed up technological innovation for the nanoelectronics of the next two to three decades.
|
|
| 2. |
- Bengtsson, Stefan, 1961, et al.
(författare)
-
Characterisation of interface electron state distributions at directly bonded silicon/silicon interfaces
- 1990
-
Ingår i: ESSDERC 90. 20th European Solid State Device Research Conference. ; , s. 1-
-
Konferensbidrag (refereegranskat)abstract
- Measurement methods for characterizing the electrical properties of directly bonded Si/Si n/n-type or p/p-type interfaces are presented. The density of interface states in the bandgap of the semiconductor and the density of interface charges at the bonded interface are determined from measurements of current and capacitance vs. applied voltage
|
|
| 3. |
- Bengtsson, Stefan, 1961, et al.
(författare)
-
Charge densities at silicon interfaces prepared by wafer bonding
- 1990
-
Ingår i: 1990 IEEE SOS/SOI Technology Conference.. ; , s. 77-
-
Tidskriftsartikel (refereegranskat)abstract
- It is found that Si/Si and Si/SiO2 interfaces exhibit different interface charge properties when bonded at comparable temperatures and surface treatments. Thermally grown oxides were bonded to bare silicon surfaces and the bonded Si/SiO2 interface was investigated on MOS-structures by the C-V technique. Interfaces prepared at temperatures in the range 900-1100°c exhibited U-shaped interface state densities. Si/Si samples were prepared using a hydrophilizing surface treatment before wafer bonding. At the same annealing temperatures, the interface state densities of the bonded Si/Si interfaces were in the range 1011-1013 cm-2 eV-1. Si/Si interfaces are found to be very sensitive to prebond chemical treatment, while Si/SiO2 interfaces are not. Native oxides at bonded silicon interfaces have a more pronounced influence on Si/Si interfaces than on Si/SiO2 interfaces
|
|
| 4. |
|
|
| 5. |
|
|
| 6. |
- Bengtsson, Stefan, 1961, et al.
(författare)
-
IC process compatible preparation of silicon interfaces using the silicon-to-silicon direct bonding method
- 1989
-
Ingår i: ESSDERC '89. 19th European Solid State Devices Research Conference. ; , s. 353-
-
Konferensbidrag (refereegranskat)abstract
- Silicon/silicon interfaces were prepared by wafer bonding using the silicon-to-silicon direct bonding method. Silicon/silicon interfaces (n/n-type) with excellent electric properties were prepared, by using hydrophobic wafer surfaces, at temperatures in the range of 700°C to 1000°C. The influence of the bonded interface on device characteristics of bonded p+n junctions prepared at low temperatures was seen as n-factors larger than 2 at forward bias. A correlation between n-factors and the density of states in the bandgap was found. In hydrophilic samples, the density of voids at the bonded interface was determined mainly in the contacting of the wafer surfaces at room temperature. Compared to hydrophilic samples, hydrophobic samples were held together at a smaller fraction of the area before heat treatment. After the heat treatments, no difference in the density of voids was found
|
|
| 7. |
|
|
| 8. |
|
|
| 9. |
|
|
| 10. |
- Bengtsson, Stefan, 1961, et al.
(författare)
-
Oxide degradation of wafer bonded MOS capacitors following Fowler-Nordheim electron injection
- 1992
-
Ingår i: Proceedings of the First International Symposium on Semiconductor Wafer Bonding: Science, Technology and Applications. ; , s. 339-
-
Konferensbidrag (refereegranskat)abstract
- The degradation of wafer bonded silicon dioxides as a result of Fowler-Nordheim electron injection has been studied. The samples were MOS capacitors with wafer bonded SiO2-SiO2 interfaces at the oxide center. The charge trapping in the oxide and the Si-SiO2 interface state generation were monitored as a function of injected charge and compared to reference MOS capacitors without bonded interfaces. A larger change in the oxide charge was found in the bonded capacitors as compared to the reference structures. The centroid of trapped negative oxide charge was found to be located close to the SiO2-SiO2 interface in the bonded structures, while the reference structures exhibited centroids close to the injecting contact. The electron injection caused approximately the same generation of interface states in both groups of capacitors
|
|
