1. |
- Engström, Olof, 1943, et al.
(författare)
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Gate stacks
- 2013
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Ingår i: Nanoscale CMOS: Innovative Materials, Modeling and Characterization. - : Wiley. ; , s. 23 - 67
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Bokkapitel (övrigt vetenskapligt/konstnärligt)
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2. |
- Gomeniuk, Y. Y, et al.
(författare)
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Electrical properties of LaLuO3/Si(100) structures prepared by molecular beam deposition
- 2010
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Ingår i: ECS Transactions. - : The Electrochemical Society. - 1938-5862 .- 1938-6737. - 9781566778220 ; 33:3, s. 221-227
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Konferensbidrag (refereegranskat)abstract
- The paper presents the results of electrical characterization in the wide temperature range (120-320 K) of the interface and bulk properties of high-k LaLuO3 dielectric deposited by molecular beam deposition (MBD) on silicon substrate. The energy distribution of interface state density is presented and typical maxima of 1.2×1011 and 2.5×10 11 eV-1 cm-2 were found at about 0.25-0.3 eV from the silicon valence band. The charge carrier transport through the dielectric at the forward bias was found to occur via Poole-Frenkel mechanism, while variable range hopping conduction (Mott's law) controls the current at the reverse bias.
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3. |
- Lu, Y., et al.
(författare)
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Leakage current effects on C-V plots of high-k metal-oxide-semiconductor capacitors
- 2009
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Ingår i: Journal of Vacuum Science & Technology B. - : American Vacuum Society. - 1071-1023 .- 1520-8567 .- 2166-2754 .- 2166-2746. ; 27:1, s. 352-355
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Tidskriftsartikel (refereegranskat)abstract
- With the employment of ultrathin, high dielectric constant gate materials in advanced semiconductor technology, the conventional capacitance-voltage measurement technique exhibits a series of anomalies. In particular, a nonsaturating increase in the accumulation capacitance with reducing measurement frequency is frequently observed, which has not been adequately explained to our knowledge. In this article, the authors provide an explanation for this anomaly and hence set a criterion for the lower bound on measurement frequency. We then present a model which allows the easy extraction of the required parameters and apply it to an experimental set of data.
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