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| 2. |
- Sun, J. W., et al.
(författare)
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LTPL Investigation of N-Ga and N-Al Donor-Acceptor Pair Spectra in 3C-SiC Layers Grown by VLS on 6H-SiC Substrates
- 2010
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Ingår i: Silicon Carbide and Related Materials 2009. ; , s. 415-418
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Konferensbidrag (refereegranskat)abstract
- Ga-doped 3C-SiC layers have been grown on on-axis 6H-SiC (0001) substrates by the VLS technique and investigated by low temperature photoluminescence (LTPL) measurements. On these Ga-doped samples, all experimental spectra collected at 5K were found dominated by strong N-Ga donor-acceptor pair (DAP) transitions and phonon replicas. As expected, the N-Ga DAP zero-phonon line (ZPL) was located at lower energy ( 86 meV) below the N-Al one. Fitting the transition energies for the N-Al close DAP lines gave 251 meV for the Al acceptor binding energy in 3C-SiC and, by comparison, 337 meV for the Ga acceptor one.
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| 3. |
- Sun, J. W., et al.
(författare)
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Splitting of close N-€Al donor-€acceptor-€pair spectra in 3C-€SiC
- 2010
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Konferensbidrag (refereegranskat)abstract
- Discrete series of lines have been observed for many years in N‐Al DAP (Donor Acceptor Pair) spectra in 3C‐SiC. Unfortunately, up to now, there has been no quantitative analysis for the splitting of lines in a given shell. This is done in this work for N‐Al DAP spectra in 3C‐SiC. The samples were non‐intentionally doped 3C‐SiC layers grown by CVD on a VLS seeding layer grown on a 6H‐SiC substrate. From low temperature photoluminescence measurements, strong N‐Al DAP emission bands were observed and, on the high energy side of the zero‐phonon line, we could resolve a series of discrete lines coming from close pairs. Comparing with literature data, we show that the splitting energy for a given shell is constant and, to explain this shell substructure, we consider the non equivalent sets of sites for a given shell. Results are discussed in terms of the ion‐ion interaction containing third and forth multipole terms.
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| 4. |
- Zoulis, G., et al.
(författare)
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Effects of Growth Conditions on the Low Temperature Photoluminescence Spectra of (111) 3C-€SiC Layers Grown by Chemical Vapor Deposition on 3C-€SiC Seeds grown by the Vapor-€Liquid-Solid Technique
- 2010
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Ingår i: AIP Conference Proceedings. - : AIP. - 0094-243X.
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Konferensbidrag (refereegranskat)abstract
- We report the results of a low temperature photoluminescence investigation of 3C‐SiC samples grown by chemical vapor deposition on vapor‐liquid‐solid seeds. The main parameters tested in this series of samples were i°) the effects of changing the C/Si ratio and ii°) the growth temperature on the final growth product. On the first series the C/Si ratio varied from 1 to 14 for a constant growth temperature of 1550° C. For the second series, the growth temperature varied from 1450 to 1650° C by steps of 50° C with a constant C/Si ratio equal to 3. According to this work, the best results (minimum incorporation of impurities and best crystal quality) were obtained when using a C/Si ratio of 3 at 1650° C.
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| 5. |
- Esteve, Romain, et al.
(författare)
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Electrical properties of MOS structures based on 3C-SiC(111) epilayers grown by Vapor-Liquid-Solid Transport and Chemical-Vapor Deposition on 6H-SiC(0001)
- 2010
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Ingår i: AIP Conference Proceedings. - : AIP Publishing. - 9780735408470 ; , s. 55-58
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Konferensbidrag (refereegranskat)abstract
- The electrical properties of post-oxidized PECVD oxides in wet oxygen based on 3C-SiC(111) epilayers grown by Vapor-Liquid-Solid and Chemical-Vapor-Deposition mechanisms on 6H-SiC(0001) have been studied. Different 6H-SiC(0001) samples exhibiting diverse crystal orientations (on-axis, 2 degrees off-axis) and growth conditions were regarded. A comparative study of oxide qualities has been carried out via capacitance and conductance measurements (C-G-V). Achieved interface traps densities and effective oxide charges were compared for the different samples. Reliability issues have been considered via current measurements (I-V and TZDB) and statistical data treatment techniques (Weibull plots). Oxides based on 3C-SiC layer grown by a process combining VLS and CVD methods demonstrated low interface states densities D-it of 1.2 x 10(10) eV(-1)cm(-2) at 0.63 eV below the conduction band and fixed oxide charges Q(eff)/(g) estimated to -0.1 x 10(11) cm(-2)
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| 6. |
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| 7. |
- Marinova, Maya, et al.
(författare)
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Structural and Optical Investigation of VLS Grown (111) 3C-SiC Layers on 6H-SiC Substrates in Sn-Based Melts
- 2011
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Ingår i: Silicon Carbide and Related Materials 2010. ; , s. 165-168
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Konferensbidrag (refereegranskat)abstract
- The current communication focuses on the investigation of 3C-SiC layers grown by the Vapour-Liquid-Solid mechanism on on-axis Si-face 6H-SiC substrates in SiSn melts with different compositions and at different growth temperatures. The layers are studied by Transmission Electron Microscopy and Low Temperature Photoluminescence. It was found that for melts with Sn concentration higher than 60 at% large Sn-related precipitates are formed. The depth distribution of the Sn precipitates strongly depends not only on the melt composition but also on the growth temperature. Their formation strongly influences the stacking fault density and the dopant incorporation in the layers. Lower Sn concentrations combined with higher growth temperatures should result in 3C-SiC layer with enhanced structural quality.
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| 8. |
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| 9. |
- Zoulis, G., et al.
(författare)
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Seeding layer influence on the low temperature photoluminescence intensity of 3C-SiC grown on 6H-SiC by sublimation epitaxy
- 2012
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Ingår i: HETEROSIC and WASMPE 2011. - : Trans Tech Publications Inc.. ; , s. 149-153
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Konferensbidrag (refereegranskat)abstract
- We report on n-type 3C-SiC samples grown by sublimation epitaxy. We focus on the low temperature photoluminescence intensity and show that the presence of a first conversion layer, grown at low temperature, is not only beneficial to improve the homogeneity of the polytype conversion but, also, to the LTPL signal intensity. From the use of a simple model, we show that this comes from a reduced density of non-radiative recombination centers.
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| 10. |
- Beshkova, Milena, et al.
(författare)
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Properties of 3C-SiC Grown by Sublimation Epitaxy on Different Type of Substrates
- 2010
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Ingår i: Materials Science Forum, Vols. 645-648. - : Transtec Publications; 1999. ; , s. 183-186
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Konferensbidrag (refereegranskat)abstract
- 3C-SiC layers have been grown by using sublimation epitaxy at a temperature of 2000 degrees C, on different types of on-axis 6H-SiC(0001) substrates. The influence of the type of substrate on the morphology of the layers investigated by Atomic Force Microscopy (AFM) is discussed. Stacking faults are studied by reciprocal space map (RSM) which shows that double positions domains exists.
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