| 1. |
- Braun, Stefan, et al.
(författare)
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Method for the wafer-level integration of shape memory alloy wires
- 2013
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Patent (populärvet., debatt m.m.)abstract
- The present invention relates to a method to attach a shape memory alloy wire to a substrate, where the wire is mechanically attached into a 3D structure on the substrate. The present invention also relates to a device comprising a shape memory alloy wire attached to a substrate, where the wire is mechanically attached into a 3D structure on the substrate.
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| 2. |
- Fischer, Andreas C., 1982-, et al.
(författare)
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A method and an apparatus for forming electrically conductive vias in a substrate, an automated robot-based manufacturing system, a component comprising a substrate with via holes, and an interposer device
- 2010
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Patent (populärvet., debatt m.m.)abstract
- A method for forming conductive vias in a substrate (302) by filling preformed via holes (303-305), preferably through via holes, with conductive material, comprises providing a plurality of preformed objects at least partly comprising ferromagnetic material (301) on a surface of the substrate; providing a magnetic source (307) on an opposite side of the substrate with respect to the plurality of preformed objects, thereby at least partly aligning at least a portion of the preformed objects with a magnetic field associated with the magnetic source; and moving the magnetic source relative the substrate, or vice versa, thereby moving the at least portion of the preformed objects into at least a portion of the via holes.
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| 3. |
- Fischer, Andreas C., 1982-, et al.
(författare)
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Free form printing of silicon micro- and nanostructures
- 2010
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Patent (populärvet., debatt m.m.)abstract
- The invention relates to a method of making a three-dimensional structure in semiconductor material. A substrate (20) is provided having at least a surface comprising semiconductor material. Selected areas of the surface of the substrate are to a focused ion beam whereby the ions are implanted in the semiconductor material in said selected areas. Several layers of a material selected from the group consisting of mono-crystalline, poly-crystalline or amorphous semiconductor material, are deposited on the substrate surface and between depositions focused ion beam is used to expose the surface so as to define a three-dimensional structure. Material not part of the final structure (30) defined by the focused ion beam is etched away so as to provide a three-dimensional structure on said substrate (20).
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| 4. |
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| 5. |
- Fischer, Andreas C., 1982-, et al.
(författare)
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Method for plugging a hole and a plugged hole
- 2009
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Patent (populärvet., debatt m.m.)abstract
- A method for at least partially inserting a plug into a hole, said method comprising the steps of a) providing a at least one substrate with at least one hole wherein said at least one hole has a largest dimension of from 1 μm to 300 μm, b) providing a piece of material, wherein said piece of material has a larger dimension than said at least one hole, c) pressing said piece of material against the hole with a tool so that a plug is formed, wherein at least a part of said piece of material is pressed into said hole, d) removing the tool from the piece of material. There is further disclosed a plugged hole manufactured with the method. One advantage of an embodiment is that an industrially available wire bonding technology can be used to seal various cavities. The existing wire bonding technology makes the plugging fast and cheap.
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| 6. |
- Ruhl, Guenther, et al.
(författare)
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Mems
- 2015
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Patent (populärvet., debatt m.m.)abstract
- Embodiments provide a MEMS including a MEMS device and an detector circuit. The MEMS device includes a membrane, wherein a material of the membrane comprises a band gap and a crystal structure with structural elements (unit cells) connected by covalent bonds in two dimensions only. The detector circuit is configured to determine a deformation of the membrane based on a piezoresistive resistance of the material of the membrane.
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