| 1. |
- Fuhrer, Andreas, et al.
(author)
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Few electron double quantum dots in InAs/InP nanowire heterostructures
- 2007
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In: Nano Letters. - : American Chemical Society (ACS). - 1530-6992 .- 1530-6984. ; 7:2, s. 243-246
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Journal article (peer-reviewed)abstract
- We report on fabrication of double quantum dots in catalytically grown InAs/InP nanowire heterostructures. In the few-electron regime, starting with both dots empty, our low-temperature transport measurements reveal a clear shell structure for sequential charging of the larger of the two dots with up to 12 electrons. The resonant current through the double dot is found to depend on the orbital coupling between states of different radial symmetry. The charging energies are well described by a capacitance model if next-neighbor capacitances are taken into account.
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| 2. |
- Björk, Mikael, et al.
(author)
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Tunable effective g factor in InAs nanowire quantum dots
- 2005
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In: Physical Review B (Condensed Matter and Materials Physics). - 1098-0121. ; 72:20
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Journal article (peer-reviewed)abstract
- We report tunneling spectroscopy measurements of the Zeeman spin splitting in InAs few-electron quantum dots. The dots are formed between two InP barriers in InAs nanowires with a wurtzite crystal structure grown using chemical beam epitaxy. The values of the electron g factors of the first few electrons entering the dot are found to strongly depend on dot size. They range from close to the InAs bulk value in large dots vertical bar g(*)vertical bar=13 down to vertical bar g(*)vertical bar=2.3 for the smallest dots.
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| 3. |
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| 4. |
- Suyatin, Dmitry, et al.
(author)
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Electrical properties of self-assembled branched InAs nanowire junctions
- 2008
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In: Nano Letters. - : American Chemical Society (ACS). - 1530-6992 .- 1530-6984. ; 8:4, s. 1100-1104
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Journal article (peer-reviewed)abstract
- We investigate electrical properties of self-assembled branched InAs nanowires. The branched nanowires are catalytically grown using chemical beam epitaxy, and three-terminal nanoelectronic devices are fabricated from the branched nanowires using electron-beam lithography. We demonstrate that, in difference from conventional macroscopic junctions, the fabricated self-assembled nanowire junction devices exhibit tunable nonlinear electrical characteristics and a signature of ballistic electron transport. As an example of applications, we demonstrate that the self-assembled three-terminal nanowire junctions can be used to implement the functions of frequency mixing, multiplication, and phase-difference detection of input electrical signals at room temperature. Our results suggest a wide range of potential applications of branched semiconductor nanostructures in nanoelectronics.
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| 5. |
- Wallin, Daniel, et al.
(author)
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Detection of charge states in nanowire quantum dots using a quantum point contact
- 2007
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In: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 90
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Journal article (peer-reviewed)abstract
- The authors demonstrate operation of a charge readout scheme for quantum dots in a semiconductor nanowire using a quantum point contact defined in a GaAs/AlGaAs two-dimensional electron gas beneath the nanowire. The quantum dots were fabricated by epitaxial growth of InP barriers along a n-type InAs nanowire. Applying negative voltages to two split-gate electrodes aligned to the nanowire induces a quantum point contact in the two-dimensional electron gas such that charging of quantum dots in the nanowire modulates the quantum point contact transmission, thus resulting in the desired detector response.
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| 6. |
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