| 1. |
- Antelius, Mikael, et al.
(författare)
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Hermetic integration of liquids in MEMS by room temperature, high-speed plugging of liquid-filled cavities at wafer level
- 2011
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Ingår i: Proceedings IEEE International Conference on Micro Electro Mechanical Systems (MEMS). - : IEEE. ; , s. 356-359
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Konferensbidrag (övrigt vetenskapligt/konstnärligt)abstract
- This paper reports a novel room temperature hermetic liquid sealing process based on wire bonded "plugs" over the access ports of liquid-filled cavities. The method enables liquids to be integrated already at the fabrication stage. Test vehicles were manufactured and used to investigate the mechanical and hermetic properties of the seals. A helium leak rate of better than 1E-10 mbarL/s was measured on the successfully sealed structures. The bond strength of the "plugs" were similar to standard wire bonds on flat surfaces.
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| 2. |
- Antelius, Mikael, et al.
(författare)
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Room-temperature wafer-level vacuum sealing by compression of high-speed wire bonded gold bumps
- 2011
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Ingår i: Proceedings IEEE International Conference on Solid-State Sensors, Actuators, and Microsystems (Transducers). - : IEEE. ; , s. 1360-1363
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Konferensbidrag (övrigt vetenskapligt/konstnärligt)abstract
- This paper reports experimental results of a novel room temperature vacuum sealing process based on compressing wire bonded gold “bumps”, causing a material flow into the access ports of vacuum-cavities. The leak rate out of manufactured cavities was measured over 5 days and evaluated to less than the detection limit, 6×10-12 mbarL/s, per sealed port. The cavities have been sealed at a vacuum level below 10 mbar. The method enables sealing of vacuum cavities at room temperature using standard commercial tools and processes.
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| 3. |
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| 4. |
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| 5. |
- Decharat, Adit, et al.
(författare)
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Novel room-temperature wafer-to-wafer attachment and sealing of cavities using cold metal welding
- 2007
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Ingår i: PROCEEDINGS OF THE IEEE TWENTIETH ANNUAL INTERNATIONAL CONFERENCE ON MICRO ELECTRO MECHANICAL SYSTEMS. - 9781424409501 ; , s. 754-757
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Konferensbidrag (refereegranskat)abstract
- In this paper we present for the first time a wafer-to-wafer attachment and sealing method for wafer level manufacturing of micro-cavities using a room temperature bonding process. The proposed attachment and sealing method is based on plastic deformation and cold welding of overlapping metal rings to create metal-to-metal bonding and sealing. We present the results from experiments using various bonding process parameters and metal sealing ring designs and their impact on the resulting bonds. Experiments are performed to evaluate the sealing properties against liquids and vapors of the different sealing ring structures.
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| 6. |
- Dubois, Valentin, et al.
(författare)
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Design optimization and characterization of nanogap crack-junctions
- 2017
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Konferensbidrag (refereegranskat)abstract
- A crack-junction (CJ) is a nanogap electrode pair featuring reliable and controlled nanoscale gap widths that can be produced in large numbers with high dimensional accuracy on a substrate. In this paper, we present a discussion on geometrical considerations of CJs made of titanium nitride (TiN) electrodes, which provides guidelines for reliable formation of TiN CJs with well-defined dimensions. We further provide complete electrical characterization of 40 TiN CJs designed as electron tunneling junctions.
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| 7. |
- Enrico, Alessandro, et al.
(författare)
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Manufacturing of Sub-20 NM Wide Single Nanowire Devices using Conventional Stepper Lithography
- 2019
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Ingår i: Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS). - : IEEE conference proceedings. - 9781728116105 ; , s. 244-247
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Konferensbidrag (refereegranskat)abstract
- Single nanowires have a broad range of applications in chemical and bio-sensing, photonics, and material science, but realizing individual nanowire devices in a scalable manner remains extremely challenging. This work presents a scalable and flexible method to realize single gold nanowire devices. We use conventional optical stepper lithography to generate notched beam structures, and crack lithography to obtain sub-20-nm-wide nanogaps at the notches, thereby obtaining a suitable shadow mask to define a single nanowire device. Then a gold evaporation step through the shadow mask forms the individual gold nanowires with positional and dimensional accuracy and with electrical contacts to probing pads.
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| 8. |
- Enrico, Alessandro, et al.
(författare)
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Ultrafast Direct Writing of Polymers as a Simple Fabrication Method for Organic Electrochemical Transistors
- 2023
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Ingår i: 2023 22nd International Conference on Solid-State Sensors, Actuators and Microsystems, Transducers 2023. - : Institute of Electrical and Electronics Engineers Inc.. ; , s. 1543-1546
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Konferensbidrag (refereegranskat)abstract
- Organic ionic/electronic conductors (OMIECs) offer a promising alternative to metals and inorganic semiconductors for direct interfacing between human-made electronics and biological tissues. A device that takes advantage of the mixed ionic/electronic conductivity of OMIEC materials is the organic electrochemical transistor (OECT). High-density OECTs are typically fabricated using costly cleanroom-based lithography and complex lift-off processes. To simplify the fabrication of OECTs, we propose laser direct writing of conjugated polymers using a commercial two-photon polymerization 3D printer. Ultrafast laser direct writing allows single-digit micrometer resolution and high-speed processing, thereby enabling a cost-effective and simple fabrication process.
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| 9. |
- Ericsson, Per, et al.
(författare)
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Toward 17µm pitch heterogeneously integrated Si/SiGe quantum well bolometer focal plane arrays
- 2011
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Ingår i: Infrared Technology and Applications XXXVII. - : SPIE - International Society for Optical Engineering. ; , s. 801216-1-801216-9
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Konferensbidrag (refereegranskat)abstract
- Most of today's commercial solutions for un-cooled IR imaging sensors are based on resistive bolometers using either Vanadium oxide (VOx) or amorphous Silicon (a-Si) as the thermistor material. Despite the long history for both concepts, market penetration outside high-end applications is still limited. By allowing actors in adjacent fields, such as those from the MEMS industry, to enter the market, this situation could change. This requires, however, that technologies fitting their tools and processes are developed. Heterogeneous integration of Si/SiGe quantum well bolometers on standard CMOS read out circuits is one approach that could easily be adopted by the MEMS industry. Due to its mono crystalline nature, the Si/SiGe thermistor material has excellent noise properties that result in a state-ofthe- art signal-to-noise ratio. The material is also stable at temperatures well above 450°C which offers great flexibility for both sensor integration and novel vacuum packaging concepts. We have previously reported on heterogeneous integration of Si/SiGe quantum well bolometers with pitches of 40μm x 40μm and 25μm x 25μm. The technology scales well to smaller pixel pitches and in this paper, we will report on our work on developing heterogeneous integration for Si/SiGe QW bolometers with a pixel pitch of 17μm x 17μm.
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| 10. |
- Errando-Herranz, Carlos, 1989-, et al.
(författare)
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A Low-power MEMS Tunable Photonic Ring Resonator for Reconfigurable Optical Networks
- 2015
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Ingår i: Proceedings of The 28th IEEE International Conference on Micro Electro Mechanical Systems (MEMS) Estoril, Portugal. Jan 2015. - : IEEE conference proceedings. ; , s. 53-56
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Konferensbidrag (refereegranskat)abstract
- We experimentally demonstrate a low-power MEMS tunable photonic ring resonator with 10 selectable channels for wavelength selection in reconfigurable optical networks operating in the C band. The tuning is achieved by changing the geometry of the slot of a silicon slot-waveguide ring resonator, by means of vertical electrostatic parallel-plate actuation. Our device provides static power dissipation below 0.1 μW, a wavelength tuning range of 1 nm, and a narrow bandwidth of 0.1 nm, i.e. 10 nW static power dissipation per selectable channel for TE mode tuning.
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