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Träfflista för sökning "WFRF:(Fu Yifeng 1984) ;pers:(Zhang Yong 1982)"

Sökning: WFRF:(Fu Yifeng 1984) > Zhang Yong 1982

  • Resultat 1-10 av 19
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1.
  • Bao, Jie, 1982, et al. (författare)
  • Two-dimensional hexagonal boron nitride as lateral heat spreader in electrically insulating packaging
  • 2016
  • Ingår i: Journal of Physics D: Applied Physics. - : IOP Publishing. - 1361-6463 .- 0022-3727. ; 49:July 2016, s. 265501-
  • Tidskriftsartikel (refereegranskat)abstract
    • The need for electrically insulating materials with a high in-plane thermal conductivity for lateral heat spreading applications in electronic devices has intensified studies of layered hexagonal boron nitride (h-BN) films. Due to its physicochemical properties, h-BN can be utilised in power dissipating devices such as an electrically insulating heat spreader material for laterally redistributing the heat from hotspots caused by locally excessive heat flux densities. In this study, two types of boron nitride based heat spreader test structures have been assembled and evaluated for heat dissipation. The test structures separately utilised a few-layer h-BN film with and without graphene enhancement drop coated onto the hotspot test structure. The influence of the h-BN heat spreader films on the temperature distribution across the surface of the hotspot test structure was studied at a range of heat flux densities through the hotspot. It was found that the graphene-enhanced h-BN film reduced the hotspot temperature by about 8–10°C at a 1000 W/cm2 heat flux density, a temperature decrease significantly larger than for h-BN film without graphene enhancement. Finite element simulations of the h-BN film predict that further improvements in heat spreading ability are possible if the thermal contact resistance between the film and test chip are minimised.
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2.
  • Gao, Zhaoli, 1986, et al. (författare)
  • Graphene Heat Spreader for Thermal Management of Hot Spots
  • 2013
  • Ingår i: Proceedings - Electronic Components and Technology Conference. - 0569-5503. - 9781479902330 ; , s. 2075-2078
  • Konferensbidrag (refereegranskat)abstract
    • Monolayer graphene was fabricated using thermal chemical vapor deposition (TCVD) as heat spreaders in electronic packaging. Platinum (Pt) thermal evaluation chips were utilized to evaluate the thermal performance of the graphene heat spreaders. Temperature of hot spot driven at a heat flux of up to 430W·cm -2 was decreased by about 13 °C with the attaching of the graphene heat spreader. We demonstrate the potentials of using CMOS compatible TCVD process to make graphene as heat spreader for power dissipation needs. © 2013 IEEE.
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3.
  • Gao, Zhaoli, et al. (författare)
  • Graphene Heat Spreader for Thermal Management of Hot Spots in Electronic Packaging
  • 2012
  • Ingår i: Proceedings of the 18th Therminic International Workshop on Thermal Investigations of ICs and Systems. - 9782355000225 ; , s. 217-220
  • Konferensbidrag (refereegranskat)abstract
    • Monolayer graphene was fabricated using thermal CVD for the application of heat spreader in electronic packaging. Platinum (Pt) micro-heater embedded thermal testing chips were utilized to evaluate the thermal performance of the graphene heat spreader. The hot spot temperature was decreased by about 5 degrees C at a heat flux of up to 800W/cm2. It is possible to further improve the thermal performance of graphene heat spreader by optimizing the synthesis parameters and transfer process.
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4.
  • han, Hao xue, et al. (författare)
  • Enhanced Heat Spreader Based on Few-Layer Graphene Intercalated With Silane-Functionalization Molecules
  • 2014
  • Ingår i: IEEE 20th International Workshop on Thermal Investigation of ICs and Systems (Therminic). Greenwich, London, United Kingdom, 24-26 September 2014. - 9781479954155 ; , s. 1-4
  • Konferensbidrag (refereegranskat)abstract
    • We studied the heat-spreading enhancement of supported few-layer graphene by inserting silane-functionalization molecules between graphene sheets. We calculated the overall thermal resistance of graphene-substrate interface and the in-plane thermal conductivity of graphene sheets by equilibrium molecular dynamics simulations. We probed the spectral phonon transmission coefficient by non-equilibrium Green's function to characterize the local heat conduction through the interface. Our results show that the overal thermal resistance between the substrate graphene and the upper two-layer graphene underwent a three-fold increase by the presence of the molecules, while the local heat conduction from the hot spot to the graphene sheets through the molecules was largely intensified. Furthermore, the in-plane thermal conductivity of the few-layer graphene increased by 60% compared with the supported graphene non-bonded to the substrate through the molecules. This increase is attributed to the refrained cross-plane phonon scattering which in turn reinforces the in-plane heat conduction of the few-layer graphene. In summary, we proved that by inserting silane-functionalization molecules, the few-layer graphene becomes an ideal candidate for heat spreading by guiding heat more efficiently away from the heat source.
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5.
  • Han, H. X., et al. (författare)
  • Functionalization mediates heat transport in graphene nanoflakes
  • 2016
  • Ingår i: Nature Communications. - : Springer Science and Business Media LLC. - 2041-1723 .- 2041-1723. ; 7
  • Tidskriftsartikel (refereegranskat)abstract
    • The high thermal conductivity of graphene and few-layer graphene undergoes severe degradations through contact with the substrate. Here we show experimentally that the thermal management of a micro heater is substantially improved by introducing alternative heat-escaping channels into a graphene-based film bonded to functionalized graphene oxide through amino-silane molecules. Using a resistance temperature probe for in situ monitoring we demonstrate that the hotspot temperature was lowered by similar to 28 degrees C for a chip operating at 1,300 Wcm(-2). Thermal resistance probed by pulsed photothermal reflectance measurements demonstrated an improved thermal coupling due to functionalization on the graphene-graphene oxide interface. Three functionalization molecules manifest distinct interfacial thermal transport behaviour, corroborating our atomistic calculations in unveiling the role of molecular chain length and functional groups. Molecular dynamics simulations reveal that the functionalization constrains the cross-plane phonon scattering, which in turn enhances in-plane heat conduction of the bonded graphene film by recovering the long flexural phonon lifetime.
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7.
  • Huang, Shirong, et al. (författare)
  • Graphene Based Heat Spreader for High Power Chip Cooling Using Flip-chip Technology
  • 2013
  • Ingår i: 2013 IEEE 15th Electronics Packaging Technology Conference (EPTC 2013). - 9781479928330 ; , s. 347-352
  • Konferensbidrag (refereegranskat)abstract
    • Monolayer graphene was synthesized through thermal chemical vapor deposition (TCVD) as heat spreader for chip cooling. Platinum (Pt) serpentine functioned as hot spot on the thermal testing chip. The thermal testing chip with monolayer graphene film attached was bonded using flip-chip technology. The temperature at the hot spot with a monolayer graphene film as heat spreader was decreased by about 12°C and had a more uniform temperature compared to those without graphene heat spreader when driven by a heat flux of about 640W/cm 2 . Further improvements to the cooling performance of graphene heat spreader could be made by optimizing the synthesis parameters and transfer process of graphene films. © 2013 IEEE.
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8.
  • Huang, Shirong, et al. (författare)
  • Reliability of Graphene-based Films Used for High Power Electronics Packaging
  • 2015
  • Ingår i: 16th International Conference on Electronic Packaging Technology, ICEPT 2015, Changsha, China, 11-14 August 2015. - 9781467379991 ; , s. 852-855
  • Konferensbidrag (refereegranskat)abstract
    • Graphene-base film was fabricated with chemical conversion process, including graphene oxide (GO) prepared by Hummer's method, graphene oxide reduced with L-ascorbic acid (LAA), graphene based film deposited by vacuum filtration process. Meanwhile, the functionalization of the graphene-based film was performed to decrease the thermal interface resistance between the graphene-based film and substrate. Characterization data showed that the graphene-based film possessed high reliability after 500 hours under 85°C aging test. In summary, the graphene-based film can be a promising solution in thermal management of high power electronics.
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9.
  • Jeppson, Kjell, 1947, et al. (författare)
  • Hotspot test structures for evaluating carbon nanotube microfin coolers and graphene-like heat spreaders
  • 2016
  • Ingår i: 29th IEEE International Conference on Microelectronic Test Structures (ICMTS), Yokohama, Japan, Mar 28-31, 2016. - 1071-9032. ; , s. 32-36
  • Konferensbidrag (refereegranskat)abstract
    • The design, fabrication, and use of a hotspot-producing and temperature-sensing test structure for evaluating the thermal properties of carbon nanotubes, graphene and boron nitride for cooling of electronic devices in applications like 3D integrated chip-stacks, power amplifiers and light-emitting diodes is described. The test structure is a simple meander-shaped metal resistor serving both as the hotspot and the temperature thermo-meter. By use of this test structure, the influence of emerging materials like those mentioned above on the temperature of the hotspot has been evaluated with good accuracy).
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10.
  • Mu, Wei, 1985, et al. (författare)
  • Tape-Assisted Transfer of Carbon Nanotube Bundles for Through-Silicon-Via Applications
  • 2015
  • Ingår i: Journal of Electronic Materials. - : Springer Science and Business Media LLC. - 1543-186X .- 0361-5235. ; 44:8, s. 2898-2907
  • Tidskriftsartikel (refereegranskat)abstract
    • Robust methods for transferring vertically aligned carbon nanotube (CNT) bundles into through-silicon vias (TSVs) are needed since CNT growth is not compatible with complementary metal–oxide–semiconductor (CMOS) technology due to the temperature needed for growing high-quality CNTs (∼700°C). Previous methods are either too complicated or not robust enough, thereby offering too low yields. Here, a facile transfer method using tape at room temperature is proposed and experimentally demonstrated. Three different kinds of tape, viz. thermal release tape, Teflon tape, and Scotch tape, were applied as the medium for CNT transfer. The CNT bundle was adhered to the tape through a flip-chip bonder, and the influence of the bonding process on the transfer results was investigated. Two-inch wafer-scale transfer of CNT bundles was realized with yields up to 97% demonstrated. After transfer, the use of several different polymers was explored for filling the gap between the transferred CNT bundle and the sidewalls of the TSV openings to improve the filling performance. The current–voltage characteristic of the CNT TSVs indicated good electrical performance, and by measuring the via resistance as a function of via thickness, contact resistances could be eliminated and an intrinsic CNT resistivity of 1.80 mΩ cm found.
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  • Resultat 1-10 av 19

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