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- Gali, Adam, et al.
(författare)
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Anti-site pair in SiC : A model of the DI center
- 2003
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Ingår i: Physica B. - : Elsevier BV. ; , s. 175-179
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Konferensbidrag (refereegranskat)abstract
- The DI low-temperature photoluminescence center is a well-known defect stable up to 1700°C annealing in SiC, still its structure is not known after decades of study. Combining experimental and theoretical studies in this paper we will show that the properties of an anti-site pair can reproduce the measured one-electron level position and local vibration modes of the D I center and the model is consistent with other experimental findings as well. We give theoretical values of the hyperfine constants of the anti-site pair in its paramagnetic state as a means to confirm our model. © 2003 Elsevier B.V. All rights reserved.
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- Gali, Adam, et al.
(författare)
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Correlation between the antisite pair and the D-I center in SiC
- 2003
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Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 67:15
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Tidskriftsartikel (refereegranskat)abstract
- The D-I low temperature photoluminescence center is a well-known defect stable up to 1700 degreesC annealing in SiC, still its structure is not yet known. Combining experimental and theoretical studies, in this paper we will show that the properties of an antisite pair can reproduce the measured one-electron level position and local vibration modes of the D-I center, and are consistent with other experimental findings as well. We give theoretical values of the hyperfine constants of the antisite pair in its paramagnetic state as a means to confirm a model.
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