| 2. |
- Janzén, Erik, 1954-, et al.
(författare)
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Defects in SiC
- 2008
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Ingår i: Defects in Microelectronic Materials and Devices. - : Taylor and Francis LLC. ; , s. 770-
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Bokkapitel (övrigt vetenskapligt/konstnärligt)abstract
- Uncover the Defects that Compromise Performance and Reliability As microelectronics features and devices become smaller and more complex, it is critical that engineers and technologists completely understand how components can be damaged during the increasingly complicated fabrication processes required to produce them.A comprehensive survey of defects that occur in silicon-based metal-oxide semiconductor field-effect transistor (MOSFET) technologies, this book also discusses flaws in linear bipolar technologies, silicon carbide-based devices, and gallium arsenide materials and devices. These defects can profoundly affect the yield, performance, long-term reliability, and radiation response of microelectronic devices and integrated circuits (ICs). Organizing the material to build understanding of the problems and provide a quick reference for scientists, engineers and technologists, this text reviews yield- and performance-limiting defects and impurities in the device silicon layer, in the gate insulator, and/or at the critical Si/SiO2 interface. It then examines defects that impact production yield and long-term reliability, including:Vacancies, interstitials, and impurities (especially hydrogen)Negative bias temperature instabilitiesDefects in ultrathin oxides (SiO2 and silicon oxynitride)Take A Proactive Approach The authors condense decades of experience and perspectives of noted experimentalists and theorists to characterize defect properties and their impact on microelectronic devices. They identify the defects, offering solutions to avoid them and methods to detect them. These include the use of 3-D imaging, as well as electrical, analytical, computational, spectroscopic, and state-of-the-art microscopic methods. This book is a valuable look at challenges to come from emerging materials, such as high-K gate dielectrics and high-mobility substrates being developed to replace Si02 as the preferred gate dielectric material, and high-mobility substrates
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| 4. |
- Nguyen, Son Tien, 1953-, et al.
(författare)
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Defects introduced by electron-irradiation at low temperatures in SiC
- 2009
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Ingår i: Materials Science Forum Vols. 615-617. - : Trans Tech Publicarions. - 9780878493340 ; , s. 377-380
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Konferensbidrag (refereegranskat)abstract
- Defects introduced by electron irradiation at ~80-100 K in 3C-, 4H- and 6H-SiC were studied by electron paramagnetic resonance (EPR). A number of EPR spectra, labelled LE1-10, were detected. Combining EPR and supercell calculations, we will show that the LE1 center in 3C-SiC with C2v symmetry and an electron spin S=3/2 is related to the (VSi-Sii)3+ Frenkel pair between the silicon vacancy and a second neighbour Sii interstitial along the <100> direction. Results on other centers, possibly also related to interstitials, are discussed.
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