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Träfflista för sökning "WFRF:(Gali Adam) ;pers:(Itoh H.)"

Sökning: WFRF:(Gali Adam) > Itoh H.

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1.
  • Nguyen, Son Tien, 1953-, et al. (författare)
  • Defects introduced by electron-irradiation at low temperatures in SiC
  • 2009
  • Ingår i: Materials Science Forum Vols. 615-617. - : Trans Tech Publicarions. - 9780878493340 ; , s. 377-380
  • Konferensbidrag (refereegranskat)abstract
    • Defects introduced by electron irradiation at ~80-100 K in 3C-, 4H- and 6H-SiC were studied by electron paramagnetic resonance (EPR). A number of EPR spectra, labelled LE1-10, were detected. Combining EPR and supercell calculations, we will show that the LE1 center in 3C-SiC with C2v symmetry and an electron spin S=3/2 is related to the (VSi-Sii)3+ Frenkel pair between the silicon vacancy and a second neighbour Sii interstitial along the <100> direction. Results on other centers, possibly also related to interstitials, are discussed.
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2.
  • Nguyen, Tien Son, et al. (författare)
  • Identification of divacancies in 4H-SiC
  • 2006
  • Ingår i: Physica B: Condensed Matter, Vols. 376-377. - : Elsevier BV. ; , s. 334-337
  • Konferensbidrag (refereegranskat)abstract
    • The P6/P7 centers in 4H-SiC were studied by electron paramagnetic resonance (EPR) and ab initio supercell calculations. The hyperfine coupling constants of C and Si neighbors obtained by EPR are in good agreement with the calculated values for the neutral divacancy, VCVsi0. Our results suggest that the P6/P7 centers, which were previously assigned to the photo-excited triplet states of the carbon vacancy-carbon antisite pairs in the double positive charge state (VCCsi2+), are related to the triplet ground states of the C-3v/C-1h si configurations of VCVsi0 (c) 2006 Elsevier B.V. All rights reserved.
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