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- Isoya, J, et al.
(författare)
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Pulsed EPR studies of phosphorus shallow donors in diamond and SiC
- 2006
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Ingår i: Physica B, Vols. 376-377. - : Elsevier BV. ; , s. 358-361
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Konferensbidrag (refereegranskat)abstract
- Phosphorus shallow donors having the symmetry lower than T-d are studied by pulsed EPR. In diamond:P and 3C-SiC:P, the symmetry is lowered to D-2d and the density of the donor wave function on the phosphorus atom exhibits a predominant p-character. In 4H-SiC:P with the site symmetry of C-3v, the A(1) ground state of the phosphorus donors substituting at the quasi-cubic site of silicon shows an axial character of the distribution of the donor wave function in the vicinity of the phosphorus atom. (c) 2005 Elsevier B.V. All rights reserved.
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- Nguyen, Tien Son, et al.
(författare)
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Identification of divacancies in 4H-SiC
- 2006
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Ingår i: Physica B: Condensed Matter, Vols. 376-377. - : Elsevier BV. ; , s. 334-337
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Konferensbidrag (refereegranskat)abstract
- The P6/P7 centers in 4H-SiC were studied by electron paramagnetic resonance (EPR) and ab initio supercell calculations. The hyperfine coupling constants of C and Si neighbors obtained by EPR are in good agreement with the calculated values for the neutral divacancy, VCVsi0. Our results suggest that the P6/P7 centers, which were previously assigned to the photo-excited triplet states of the carbon vacancy-carbon antisite pairs in the double positive charge state (VCCsi2+), are related to the triplet ground states of the C-3v/C-1h si configurations of VCVsi0 (c) 2006 Elsevier B.V. All rights reserved.
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