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Sökning: WFRF:(Georgieva L) > Konferensbidrag

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1.
  • Kasamakova-Kolaklieva, L, et al. (författare)
  • Characteristics of Ni Schottky contacts on compensated 4H-SiC layers
  • 2003
  • Ingår i: Materials Science Forum, Vols. 433-436. - : Trans Tech Publications. ; , s. 709-712
  • Konferensbidrag (refereegranskat)abstract
    • The electrical properties of Ni Schottky contacts to compensated 4H-SiC layers have been characterized by means of IN and C-V measurements and the key parameters have been determined. The measured barrier heights were between 0.90 eV and 2.90 eV depending on the conductivity type and the donor/acceptor concentration as well as the measurement techniques used. Inhomogeneties in IN characteristics of some rectifiers at lower forward-bias voltages have been observed. This may suggest enhanced trapping mechanism due to the nonuniform boron compensation of the epilayers.
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2.
  • Kassamakova, L, et al. (författare)
  • Effect of temperature treatment on Au/Pd Schottky contacts to 4H-SiC
  • 2002
  • Ingår i: Materials Science Forum, Vols. 389-393. ; , s. 929-932
  • Konferensbidrag (refereegranskat)abstract
    • Au/Pd/SiC Schottky baffler contacts have been formed on n-type 4H-SiC grown by sublimation epitaxy. The effect of annealing temperature on the electrical properties of these contacts was studied using IN and C-V measurements. The barrier height was found to increase slightly from 1.14 eV for as-deposited contacts to 1.2 eV after annealing at 500 degreesC, while the more pronounced effect was observed with decrease of the ideality factor, Auger analysis was used to study the metallurgy of the annealed contacts. Strong diffusion between Au and Pd was established after 500 degreesC anneal, while the Pd/SiC interface remained almost steep, The electrical properties of annealed contacts have been study during the thermal treatment at temperatures up to 350 degreesC and prolonged ageing at 300 degreesC and 400 degreesC in nitrogen.
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