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- Dumitrescu, Mihail, et al.
(författare)
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10 Gb/s uncooled dilute nitride optical transmitters operating at 1300 nm
- 2009
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Ingår i: 2009 Conference on Optical Fiber Communication, OFC 2009; San Diego, CA; United States; 22 March 2009 through 26 March 2009. - Washington, D.C. : OSA. - 9781557528650
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Konferensbidrag (refereegranskat)abstract
- Dilute-nitride lasers with record performances have been used to build uncooled transceivers and failure free 10 Gb/s optical transmission was achieved over 815 m of multimode Corning InfiniCor fiber under the LRM standard.
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| 2. |
- Lim, J.J., et al.
(författare)
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Static and dynamic performance optimization of a 1.3 µm GaInNAs ridge waveguide laser
- 2008
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Ingår i: 2008 International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD'08; Nottingham; United Kingdom; 1 September 2008 through 4 September 2008. - 9781424423071 ; , s. 121-122
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Konferensbidrag (refereegranskat)abstract
- In this work, we optimise the structure of an uncooled directly modulated 1.3 μm GaInNAs ridge waveguide laser for high temperature operation. The static and dynamic performance of the optimised design is analyzed using an accurate in-house 2D electro-opto-thermal laser simulator. The optimised structure Is shown to have a lower threshold current, higher efficiency, higher modulation bandwidth and lower vertical beam divergence compared to a reference structure with a conventional design. Large-signal 10 Gbit/s digital modulation simulations were performed and demonstrate the improved performance of the optimised structure especially under high temperature operation.
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| 3. |
- Lim, Jun, et al.
(författare)
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Static and dynamic performance optimisation of a 1.3 mu m GaInNAs ridge waveguide laser
- 2008
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Ingår i: Optical and Quantum Electronics. - : Springer Science and Business Media LLC. - 0306-8919 .- 1572-817X. ; 40:14-15, s. 1181-1186
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Tidskriftsartikel (refereegranskat)abstract
- In this work, we perform a multi-parameter design study to improve the performance of an uncooled directly modulated 1.3 mu m GaInNAs ridge waveguide laser for high speed operation especially at high temperature. The static and dynamic performance of the improved design is analyzed using an accurate in-house 2D electro-opto-thermal laser simulator. The improved structure is shown to have a lower threshold current, higher thermal roll-over limit and higher modulation bandwidth-especially under high temperature operation. The improved structure also has a lower vertical beam divergence compared to a reference structure with a conventional design.
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| 10. |
- Wang, Shu Min, 1963, et al.
(författare)
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Growth of dilute nitrides and 1.3 μm edge emitting lasers on GaAs by MBE
- 2011
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Ingår i: Physica Status Solidi (B): Basic Research. - : Wiley. - 1521-3951 .- 0370-1972. ; 248:5, s. 1207-1211
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Tidskriftsartikel (refereegranskat)abstract
- In this paper, we report recent progresses on growth of dilute nitrides and 1.3 mu m lasers on GaAs using molecular beam epitaxy at Chalmers University of Technology, Sweden. Intense long wavelength light emission up to 1.71 mu m at room temperature has been achieved by using the N irradiation method and the low growth rate. It is also demonstrated that incorporation of N in relaxed InGaAs buffer grown on GaAs strongly enhances the optical quality of metamorphic InGaAs quantum wells. With the optimized growth conditions and the laser structures, we demonstrate 1.3 mu m GaInNAs edge emitting lasers on GaAs with state-of-the-art performances including a low threshold current density, a high-characteristic temperature, a 3 dB bandwidth of 17 GHz and uncooled operation at 10 Gbit/s up to 110 degrees C. The laser performances are comparable with the best reported data from the InGaAsP lasers on InP and is superior to the InAs quantum dot lasers on GaAs.
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