| 1. |
- Buffolo, M., et al.
(författare)
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Modeling of the Optical and Electrical Degradation of 845 nm VCSILs
- 2023
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Ingår i: 2023 Conference on Lasers and Electro-Optics, CLEO 2023.
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Konferensbidrag (refereegranskat)abstract
- Optical and electrical degradation of novel micro-transfer-printed VCSILs is investigated. Modeling of experimental data suggests that the main degradation mechanism is represented by the relocation of impurities, originating from the p-side, toward the active region.
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| 2. |
- Goyvaerts, Jeroen, et al.
(författare)
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Enabling VCSEL-on-silicon nitride photonic integrated circuits with micro-transfer-printing
- 2021
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Ingår i: Optica. - 2334-2536. ; 8:12, s. 1573-1580
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Tidskriftsartikel (refereegranskat)abstract
- New wavelength domains have become accessible for photonic integrated circuits (PICs) with the development of silicon nitride PICs. In particular, the visible and near-infrared wavelength range is of interest for a range of sensing and communication applications. The integration of energy-efficient III-V lasers, such as vertical-cavity surface-emitting lasers (VCSELs), is important for expanding the application portfolio of such PICs. However, most of the demonstrated integration approaches are not easily scalable towards low-cost and large-volume production. In this work, we demonstrate the micro-transfer-printing of bottom-emitting VCSELs on silicon nitride PICs as a path to achieve this. The demonstrated 850 nm lasers show waveguide-coupled powers exceeding 100 mu W, with sub-mA lasing thresholds and mW-level power consumption. A single-mode laser with a side-mode suppression ratio over 45 dB and a tuning range of 5 nm is demonstrated. Combining micro-transfer-printing integration with the extended-cavity VCSEL design developed in this work provides the silicon nitride PIC industry with a great tool to integrate energy-efficient VCSELs onto silicon nitride PICs.
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| 3. |
- Gustavsson, Johan, 1974, et al.
(författare)
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Silicon integrated 850-nm hybrid vertical-cavity laser for life science applications
- 2017
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Ingår i: VCSEL Day 2017.
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Konferensbidrag (refereegranskat)abstract
- The integration of efficient laser sources on silicon would enable fully integrated silicon photonic circuits with a high degree of functionality and performance complexity for many applications [1]. Different integration concepts have therefore been suggested, where one such technique is the heterogeneous integration of a vertical-cavity laser (VCL), referred to as a hybrid VCL. It is promising as it has potential to offer low drive currents, high modulation bandwidths, and small footprint [2-4]. In-plane emission with waveguide-coupling can be achieved by an intra-cavity waveguide embossed with a weak diffraction grating, as an example [5]. Integration of such short-wavelength laser sources on a silicon-nitride (SiN) waveguide platform on silicon may enable fully integrated silicon photonic circuits for applications not only in short-reach optical interconnects but also in life science and bio-photonics. As a first step in realizing short-wavelength hybrid VCLs with in-plane emission coupled to a SiN waveguide, we have developed a technique to produce high performance 850-nm hybrid VCLs with out-of-plane emission. It is based on adhesive bonding of epitaxial AlGaAs-material onto a dielectric distributed Bragg reflector (DBR) on silicon [6-8]. We have fabricated devices with surface emission having sub-mA threshold current, >2 mW output power, and 25 Gbit/s modulation speed [8]. To be able to demonstrate in-plane emission with SiN waveguide coupling from our hybrid 850-nm VCLs, our next step is to add a SiN waveguide structure with embossed grating on top of the dielectric DBR, before adhesively bonding the AlGaAs-material. So far, based on numerical simulations, we have designed a device that is predicted to yield a slope efficiency of ~0.3 W/A at 25 °C for the light coupled to a single-mode waveguide, while maintaining a sub-mA threshold current for the lasing [9]. This work is supported by the European Union’s Horizon 2020 research and innovation program under grant agreement no. 688519 (PIX4life), the Swedish Foundation for Strategic Research (SSF), and the European FP7-ERC-InSpectra Advanced Grant. References [1] Z. Zhou et al., Light Sci. Appl., vol. 4, no. 11, p. e358, 2015. [2] Y. Tsunemi et al., Opt. Express, vol. 21, no. 23, p. 28685, 2013. [3] J. Ferrara et al., Opt. Express, vol. 23, no. 3, p. 2512, 2015. [4] G.C. Park et al., Laser Photon. Rev., vol. 9, no. 3, p. L11, 2015. [5] D. A. Louderback et al., Electron. Lett., vol. 40, no. 17, p. 1064, 2004. [6] E.P. Haglund et al., Opt. Express, vol. 23, no. 26, p. 33634, 2015. [7] E.P. Haglund et al., IEEE Photon. Technol. Lett., vol. 28, no. 8, p. 856, 2016. [8] E.P. Haglund et al., IEEE J. Sel. Top. Quantum Electron., vol. 23, no. 6, p. 1700109, 2017. [9] S. Kumari et al., Submitted to IEEE Photon. J.,2017.
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| 4. |
- Gustavsson, Johan, 1974, et al.
(författare)
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Silicon-Integrated Hybrid-Vertical-Cavity Lasers for Life Science Applications
- 2017
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Ingår i: 2017 IEEE Photonics Conference. - 9781509065783
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Konferensbidrag (refereegranskat)abstract
- Hybrid 850-nm-wavelength vertical-cavity lasers formed by adhesively bonding AlGaAs-material to a dielectric distributed Bragg reflector on Silicon has experimentally enabled sub-mA threshold current and 25 Gb/s modulation speed. Numerical calculations estimate >0.3 mW/mA slope efficiency for in-plane SiN waveguide coupled light using an intra-cavity grating.
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| 5. |
- Haglund, Emanuel, 1988, et al.
(författare)
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20-Gb/s Modulation of Silicon-Integrated Short-Wavelength Hybrid-Cavity VCSELs
- 2016
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Ingår i: IEEE Photonics Technology Letters. - 1041-1135 .- 1941-0174. ; 28:8, s. 856 - 859
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Tidskriftsartikel (refereegranskat)abstract
- We investigate the dynamics of silicon-integrated 850-nm-wavelength hybrid-cavity vertical-cavity surface-emitting lasers (VCSELs). The VCSELs consist of a GaAs-based half-VCSEL attached to a dielectric distributed Bragg reflector on a silicon substrate using ultra-thin divinylsiloxane-bis-benzocyclobutene adhesive bonding. A 5-µm oxide aperture diameter VCSEL, with a small signal modulation bandwidth of 11 GHz, supports data transmission at bit rates up to 20 Gb/s. The modulation bandwidth and the large signal modulation characteristics are found to be impaired by the high thermal impedance.
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| 6. |
- Haglund, Emanuel, 1988, et al.
(författare)
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Dynamic properties of silicon-integrated short-wavelength hybrid-cavity VCSEL
- 2016
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Ingår i: Proceedings of SPIE - The International Society for Optical Engineering. - : SPIE. - 0277-786X .- 1996-756X. - 9781510600010 ; 9766
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Konferensbidrag (refereegranskat)abstract
- We present a vertical-cavity surface-emitting laser (VCSEL) where a GaAs-based “half-VCSEL” is attached to a dielectric distributed Bragg reflector on silicon using ultra-thin divinylsiloxane-bis-benzocyclobutene (DVS-BCB) adhesive bonding, creating a hybrid cavity where the optical field extends over both the GaAs- and the Si-based parts of the cavity. A VCSEL with an oxide aperture diameter of 5 μm and a threshold current of 0.4 mA provides 0.6 mW output power at 845 nm. The VCSEL exhibits a modulation bandwidth of 11 GHz and can transmit data up to 20 Gbps.
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| 7. |
- Haglund, Erik, 1985, et al.
(författare)
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High-power single transverse and polarization mode VCSEL for silicon photonics integration
- 2019
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Ingår i: Optics Express. - 1094-4087 .- 1094-4087. ; 27:13, s. 18892-18899
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Tidskriftsartikel (refereegranskat)abstract
- © 2019 Optical Society of America under the terms of the OSA Open Access Publishing Agreement. We demonstrate a 6.5 mW single transverse and polarization mode GaAs-based oxide-confined VCSEL at 850 nm. High power is enabled by a relatively large oxide aperture and an epitaxial design for low resistance, low optical loss, and high slope efficiency VCSELs. With the oxide aperture supporting multiple polarization unrestrained transverse modes, single transverse and polarization mode operation is achieved by a transverse and polarization mode filter etched into the surface of the VCSEL. While the VCSEL is specifically designed for light source integration on a silicon photonic integrated circuit, its performance in terms of power, spectral purity, polarization, and beam properties are of great interest for a large range of applications.
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| 8. |
- Haglund, Emanuel, 1988, et al.
(författare)
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Hybrid vertical-cavity laser integration on silicon
- 2017
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Ingår i: Proceedings of SPIE - The International Society for Optical Engineering. - : SPIE. - 0277-786X .- 1996-756X. - 9781510606852 ; 10122, s. 101220H-
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Konferensbidrag (refereegranskat)abstract
- The hybrid vertical-cavity laser is a potential low current, high-efficiency, and small footprint light source for silicon photonics integration. As part of the development of such light sources we demonstrate hybrid-cavity VCSELs (HC-VCSELs) on silicon where a GaAs-based half-VCSEL is attached to a dielectric distributed Bragg reflector on silicon by adhesive bonding. HC-VCSELs at 850 nm with sub-mA threshold current, >2 mW output power, and 25 Gbit/s modulation speed are demonstrated. Integration of short-wavelength lasers will enable fully integrated photonic circuits on a silicon-nitride waveguide platform on silicon for applications in life science, bio-photonics, and short-reach optical interconnects.
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| 9. |
- Haglund, Emanuel, 1988, et al.
(författare)
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Impact of Bonding Interface Thickness on the Performance of Silicon-Integrated Hybrid-Cavity VCSELs
- 2016
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Ingår i: Conference Digest - IEEE International Semiconductor Laser Conference. - 0899-9406. - 9784885523069 ; , s. Article no 7765752-
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Konferensbidrag (refereegranskat)abstract
- The dependence of the performance of short-wavelength silicon-integrated hybrid-cavity VCSELs on the thickness of the bonding interface used for the heterogeneous integration has been studied. Performance measures investigated include the emission wavelength, thermal impedance, and variation of threshold current and output power with temperature.
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| 10. |
- Haglund, Emanuel, 1988, et al.
(författare)
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Silicon-Integrated 850-nm Hybrid-Cavity VCSEL
- 2015
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Ingår i: Optics and Photonics in Sweden, 28-29 Oct. 2015.
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Konferensbidrag (övrigt vetenskapligt/konstnärligt)abstract
- Silicon photonics is a promising energy-efficient and cost-effective platform for optical integrated circuits. However, due to its indirect bandgap silicon cannot be used to produce effective light sources. An attractive solution to this is heterogeneous integration of the GaAs-based vertical-cavity surface-emitting laser (VCSEL) on silicon. The GaAs-based VCSEL has proven to be both high-speed and energy efficient, with data rates above 70 Gb/s and less than 100 fJ/bit dissipated power up to 50 Gb/s.By employing ultra-thin divinylsiloxane-is-benzocyclobutene (DVS-BCB) adhesive bonding a GaAs-based “half-VCSEL” with a gain region and a top distributed Bragg Reflector (DBR) has been attached to a dielectric DBR on silicon. This creates a hybrid cavity where the standing-wave optical field is extending into both the silicon and GaAs-based parts of the cavity.The hybrid-cavity may eventually enable light to be tapped off to an in-plane waveguide, e.g. using a high contrast grating (HCG) instead of the bottom DBR. Replacing the whole bottom DBR with an HCG also gives the possibility to set the wavelength according to the grating parameters, enabling fabrication of multi-wavelength VCSEL arrays that together with integrated wavelength multiplexers could form 850-nm wavelength division multiplexed (WDM) transmitters.A 9 µm oxide aperture diameter VCSEL has a threshold current of 1.2 mA and a maximum output power of 1.6 mW at ~845 nm. The performance is currently limited by the too small gain-to-resonance detuning and the high thermal impedance.
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