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Träfflista för sökning "WFRF:(Haglund Åsa 1976 ) ;pers:(Sun Jie 1977)"

Search: WFRF:(Haglund Åsa 1976 ) > Sun Jie 1977

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2.
  • Stattin, Martin, 1983, et al. (author)
  • Metal-Free Graphene as Transparent Electrode for GaN-Based Light-Emitters
  • 2013
  • In: Japanese Journal of Applied Physics. - 1347-4065 .- 0021-4922. ; 52:8 PART 2, s. 08JG05-
  • Journal article (peer-reviewed)abstract
    • Graphene contacts to p-GaN are considered as an alternative to indium–tin-oxide transparent electrodes in GaN based vertical-cavity surface-emitting lasers (VCSELs). Contact properties were investigated on light-emitting diode and p-GaN test structures, where dielectric apertures were used to eliminate the influence of the metal pads used to bias the contacts. Using single layer graphene we were able to operate light emitting diodes with current densities of 300 A/cm2. Addition of a second layer of graphene increased the maximum bias current to 1 kA/cm2. However, the contacts are non-linear and cannot withstand high current densities for a long time. The results are promising but further investigation and improvement is needed for graphene to be a viable alternative to indium–tin-oxide for blue VCSELs.
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3.
  • Sun, Jie, 1977, et al. (author)
  • Direct Chemical Vapor Deposition of Large-Area Carbon Thin Films on Gallium Nitride for Transparent Electrodes: A First Attempt
  • 2012
  • In: IEEE Transactions on Semiconductor Manufacturing. - : Institute of Electrical and Electronics Engineers (IEEE). - 0894-6507 .- 1558-2345. ; 25:3, s. 494-501
  • Journal article (peer-reviewed)abstract
    • Direct formation of large-area carbon thin films on gallium nitride by chemical vapor deposition without metallic catalysts is demonstrated. A high flow of ammonia is used to stabilize the surface of the GaN (0001)/sapphire substrate during the deposition at 950 degrees C. Various characterization methods verify that the synthesized thin films are largely sp(2) bonded, macroscopically uniform, and electrically conducting. The carbon thin films possess optical transparencies comparable to that of exfoliated graphene. This paper offers a viable route toward the use of carbon-based materials for future transparent electrodes in III-nitride optoelectronics, such as GaN-based light emitting diodes and laser diodes.
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