| 1. |
- Vukusic, J., et al.
(författare)
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MOVPE-grown GaInNAsVCSELs at 1.3 mu m with conventional mirror design approach
- 2003
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Ingår i: Electronics Letters. - : Institution of Engineering and Technology (IET). - 0013-5194 .- 1350-911X. ; 39:8, s. 662-664
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Tidskriftsartikel (refereegranskat)abstract
- 1.3 mum oxide confined GaInNAs VCSELs designed using the same design philosophy used for standard 850 nm VCSELs is presented. The VCSELs have doped mirrors, with graded and highly doped interfaces, and are fabricated using production-friendly procedures. Multimode VCSELs (I I mum oxide aperture) with an emission wavelength of 1287 nm have a threshold current of 3 mA and produce I mW of output power at 20degreesC. The maximum operating temperature is 95degreesC. Emission at 1303 nm with I mW of output power and a threshold current of 7 mA has been observed from VCSELs with a larger detuning between the gain peak and the cavity resonance.
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| 2. |
- Hammar, Mattias, et al.
(författare)
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1.3-mu m InGaAs vertical-cavity surface-emitting lasers
- 2005
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Ingår i: 2005 IEEE LEOS Annual Meeting Conference Proceedings (LEOS). - 0780392175 ; , s. 396-397
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Konferensbidrag (refereegranskat)abstract
- We report on the fabrication and performance of N-free InGaAs/GaAs 1.3-mu m range vertical-cavity surface-emitting lasers (VCSELs). Using optimized quantum-well (QW) growth conditions in combination with negative gain-cavity tuning, high-performance VCSELs with emission wavelength up to 1300 nm are realized. The performance figures include mA-range threshold currents, mW-range singlemode output power, continuous-wave operation up to 140 degrees C and 10 Gbit/s data transmission.
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| 3. |
- Söderberg, E., et al.
(författare)
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High speed, high temperature operation of 1.28-μm singlemode InGaAs VCSELs
- 2006
-
Ingår i: Electronics Letters. - : Institution of Engineering and Technology (IET). - 0013-5194 .- 1350-911X. ; 42:17, s. 978-979
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Tidskriftsartikel (refereegranskat)abstract
- Singlemode 1.28 μm InGaAs VCSELs, with a higher-order mode suppression >30 dB in the temperature range 25-85°C, have been fabricated using an inverted surface relief technique for relaxed fabrication tolerances. High performance 2.5 and 10 Gbit/s modulation is demonstrated in the same temperature range.
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| 4. |
- Söderberg, E., et al.
(författare)
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Single mode 1.28 ÎŒm InGaAs VCSELs using an inverted surface relief
- 2006
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Ingår i: Conference Digest - IEEE International Semiconductor Laser Conference. ; , s. 123-124
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Konferensbidrag (refereegranskat)abstract
- High performance 1.28 Όm InGaAs single mode VCSELs have been fabricated using an inverted surface relief to relax critical fabrication tolerances. Higher order mode suppression >30 dB and 10 Gbps modulation are demonstrated up to 85°C.
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| 5. |
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