| 1. |
- Norbäck, Dan, et al.
(författare)
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Building dampness and mold in European homes in relation to climate, building characteristics and socio-economic status : The European Community Respiratory Health Survey ECRHS II
- 2017
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Ingår i: Indoor Air. - : Hindawi Limited. - 0905-6947 .- 1600-0668. ; 27:5, s. 921-932
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Tidskriftsartikel (refereegranskat)abstract
- We studied dampness and mold in homes in relation to climate, building characteristics and socio-economic status (SES) across Europe, for 7127 homes in 22 centers. A subsample of 3118 homes was inspected. Multilevel analysis was applied, including age, gender, center, SES, climate, and building factors. Self-reported water damage (10%), damp spots (21%), and mold (16%) in past year were similar as observed data (19% dampness and 14% mold). Ambient temperature was associated with self-reported water damage (OR=1.63 per 10°C; 95% CI 1.02-2.63), damp spots (OR=2.95; 95% CI 1.98-4.39), and mold (OR=2.28; 95% CI 1.04-4.67). Precipitation was associated with water damage (OR=1.12 per 100 mm; 95% CI 1.02-1.23) and damp spots (OR=1.11; 95% CI 1.02-1.20). Ambient relative air humidity was not associated with indoor dampness and mold. Older buildings had more dampness and mold (P<.001). Manual workers reported less water damage (OR=0.69; 95% CI 0.53-0.89) but more mold (OR=1.27; 95% CI 1.03-1.55) as compared to managerial/professional workers. There were correlations between reported and observed data at center level (Spearman rho 0.61 for dampness and 0.73 for mold). In conclusion, high ambient temperature and precipitation and high building age can be risk factors for dampness and mold in homes in Europe.
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| 2. |
- Cibiraite, D., et al.
(författare)
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Thermal noise-limited sensitivity of FET-based terahertz detectors
- 2017
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Ingår i: 2017 International Conference on Noise and Fluctuations, ICNF 2017, Vilnius, Lithuania, 20-23 June 2017.
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Konferensbidrag (refereegranskat)abstract
- Here we present a detailed study on estimation of noise-dependent parameters, such as signal-to-noise ratio (SNR) or noise equivalent power (NEP), of field-effect-transistor based terahertz detectors (TeraFETs). Commonly, these parameters are estimated from a well-known assumption, that detector's performance is limited by the thermal noise of transistor's channel. However, practice shows that the influence of other noise sources or transient effects is considerable. We summarize TeraFET noise measurements performed on different material systems based transistors, such as AlGaN/GaN, AlGaAs/GaAs, silicon CMOS, and monolayer graphene. We have achieved a good agreement between thermal noise and measured data. However, attention has to be paid to gate leakage currents and slow defect charging and discharging effects, which can strongly influence TeraFET's performance estimation.
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| 3. |
- Echtermeyer, Tim J., et al.
(författare)
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Nonvolatile switching in graphene field-effect devices
- 2008
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Ingår i: IEEE Electron Device Letters. - 0741-3106 .- 1558-0563. ; 29:8, s. 952-954
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Tidskriftsartikel (refereegranskat)abstract
- The absence of a band gap in graphene restricts its straightforward application as a channel material in field-effect transistors. In this letter, we report on a new approach to engineer a band gap in graphene field-effect devices (FEDs) by controlled structural modification of the graphene channel itself. The conductance in the FEDs is switched between a conductive "ON-state" and an insulating "OFF-state" with more than six orders of magnitude difference in conductance. Above a critical value of an electric field applied to the FED gate under certain environmental conditions, a chemical modification takes place to form insulating graphene derivatives. The effect can be reversed by electrical fields of opposite polarity or short current pulses to recover the initial state. These reversible switches could potentially be applied to nonvolatile memories and novel neuromorphic processing concepts.
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| 4. |
- Lemme, Max C., 1970-, et al.
(författare)
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A graphene field-effect device
- 2007
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Ingår i: IEEE Electron Device Letters. - 0741-3106 .- 1558-0563. ; 28:4, s. 282-284
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Tidskriftsartikel (refereegranskat)abstract
- In this letter, a top-gated field-effect device (FED) manufactured from monolayer graphene is investigated. Except for graphene deposition, a conventional top-down CMOS-compatible process flow is applied. Carrier mobilities in graphene pseudo-MOS structures are compared to those obtained from the top-gated Graphene-FEDs. The extracted values exceed the universal mobility of silicon and silicon-on-insulator MOSFETs.
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| 5. |
- Martini, Antonio, et al.
(författare)
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Message from the ICSA 2023 SAIP, NEMI, ECRF, Artifacts, Posters, Journal First, Workshops/Tutorials and Working Sessions Tracks Chairs
- 2023
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Ingår i: 2023 IEEE 20TH INTERNATIONAL CONFERENCE ON SOFTWARE ARCHITECTURE COMPANION, ICSA-C. - : IEEE COMPUTER SOC. - 9781665464598 ; , s. XIII-XIV
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Konferensbidrag (övrigt vetenskapligt/konstnärligt)
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