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- Henry, C., et al.
(författare)
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Women’s entrepreneurship policy : A 13-nation cross-country comparison
- 2017
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Ingår i: Entrepreneurial ecosystems and growth of women's entrepreneurship. - : Edward Elgar Publishing. - 9781785364624 - 9781785364617 ; , s. 244-278
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Bokkapitel (övrigt vetenskapligt/konstnärligt)abstract
- Public policy is a key element within the entrepreneurial ecosystem in that policy has the potential to shape venture creation behavior and entrepreneurial outcomes. In response to studies documenting a gender gap in entrepreneurial activity, government attention to women’s entrepreneurship has increased in the past two decades. Nevertheless, there are few cross-cultural studies to inform policy development. This 13-nation study draws on gender and institutional theory to report on the status of female-focused SME/entrepreneurship policies and to ask: How - and to what extent - do women’s entrepreneurship policies differ among countries? A common methodological approach is used to identify gaps in the policy-practice nexus, highlighting countries where policy is weak but practice is strong and vice versa. Recommendations for future research are advanced.
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| 2. |
- Radamson, Henry H., et al.
(författare)
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Optimization of Selective Growth of SiGe for Source/Drain in 14nm and Beyond Nodes FinFETs
- 2017
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Ingår i: Scaling and Integration of High-Speed Electronics and Optomechanical Systems. - : World Scientific Pub Co Pte Ltd. ; , s. 99-107
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Bokkapitel (övrigt vetenskapligt/konstnärligt)abstract
- In this work, optimization of selective epitaxy growth (SEG) of SiGe layers on source/drain (S/D) areas in 14nm node FinFETs with high-k and metal gate has been presented. The Ge content in epilayers was in range of 30%-40% with boron concentration of 1-3 × 1020 cm-3. The strain distribution in the transistor structure due to SiGe as stressor material in S/D was simulated and these results were used as feedback to design the layer profile. The epitaxy parameters were optimized to improve the layer quality and strain amount of SiGe layers. The in-situ cleaning of Si fins was crucial to grow high quality layers and a series of experiments were performed in range of 760-825 °C. The results demonstrated that the thermal budget has to be within 780-800 °C in order to remove the native oxide but also to avoid any harm to the shape of Si fins. The Ge content in SiGe layers was directly determined from the misfit parameters obtained from reciprocal space mappings using synchrotron radiation. Atomic layer deposition (ALD) technique was used to deposit HfO2 as high-k dielectric and B-doped W layer as metal gate to fill the gate trench. This type of ALD metal gate has decent growth rate, low resistivity and excellent capability to fill the gate trench with high aspect-ratio. Finally, the electrical characteristics of fabricated FinFETs were demonstrated and discussed.
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